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Silicon Carbide (SiC) has emerged as an essential technological material. It’s utilized for use in abrasives, technical ceramics and refractories – as well as semiconductor manufacturing. Produced by heating silica sand mixed with carbon in the form of petroleum coke at high temperatures in huge open “Acheson” furnaces, SiC is then produced in both Green […]

Карбід кремнію - це абразивний матеріал, який зазвичай використовується в шліфувальних кругах, шліфувальних стрічках і абразивних матеріалах. Як неорганічна хімічна сполука він конкурує за твердістю з алмазом і карбідом бору. Чорний карбід кремнію (карборунд) - один із найпоширеніших абразивних матеріалів, що вирізняється твердими та кутастими зернами, які забезпечують ефективну обробку таких матеріалів

Карбід кремнію (SiC) має незвичайну кристалічну структуру. Він містить чотири атоми Si і чотири атоми C в упорядкованому координаційному тетраедричному розташуванні з шарами, складеними в політипи, що утворюють його первинний координаційний тетраедр. З електричної точки зору карбід кремнію здатен витримувати напругу в п'ять-десять разів вищу, ніж кремній. Це робить його чудовим матеріалом для силових

Technology advances are once-in-a-generation events for semiconductor businesses, and those that accept them stand to reap enormous profits. Cree, now Wolfspeed, stands to benefit from the trend towards silicon carbide power devices. Their innovations in device design and production allow them to manufacture smaller chips with equal power ratings on each wafer – thus expanding

Okamoto et al. measured the conductivity of silicon carbide at various temperatures and found that small amounts of Si additive did not increase conductivity by two to three orders of magnitude, but exceeding 5 mol% caused conductivity levels to soar by up to three orders of magnitude. Silicon carbide is a semiconductor material, capable of

Amorphous silicon carbide (a-SiC) has gained immense attention due to its variable optical and electronic properties. As it features rigidity, low thermal expansion rates, and visible light transparency it makes an attractive material for telescope mirrors. Material science is experiencing a revolution with the introduction of this novel material: a-SiC. With properties combining strength with

4H-SiC is an increasingly popular polytype of silicon carbide. Due to its wide bandgap and excellent thermal, electrical, and mechanical properties, it makes an ideal material for power electronics applications. We investigated the elastic deformation and cracking behavior of a single crystal 4H-SiC pillar specimen with [0001] orientation by performing four times loading-unloading compression strain

Silicon carbide whiskers, single-crystal micron-sized particles with outstanding physical and chemical properties, have garnered significant research interest due to their wide-ranging applications across many fields including high temperature structural materials and tool ceramics. Mullite ceramic is a highly chemically stable refractory material with superior mechanical and physical properties such as high hardness and temperature creep

Silicon carbide inverter technology is an exciting power semiconductor advancement. It boasts several advantages over conventional silicon devices, including lower power losses up to ten times less and improved thermal performance. McLaren Applied is employing a high-voltage CoolSiC metal oxide semiconductor field-effect transistor (MOSFET), designed specifically to handle high voltage 800-volt systems found in electric

Silicon carbide, more commonly referred to as carborundum, is an extremely hard synthetic crystalline compound made up of silicon and carbon characterized by high thermal conductivity, low coefficient of expansion, resistance to chemical reaction and semiconducting capabilities. Moissanite, its natural counterpart, occurs as a mineral but can only be found in very limited amounts in