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Silicon Carbide (SiC) has emerged as an essential technological material. It’s utilized for use in abrasives, technical ceramics and refractories – as well as semiconductor manufacturing. Produced by heating silica sand mixed with carbon in the form of petroleum coke at high temperatures in huge open “Acheson” furnaces, SiC is then produced in both Green […]

Silicon carbide is an abrasive material commonly found in grinding wheels, sanding belts and blast media. As an inorganic chemical compound it competes with diamond and boron carbide in terms of hardness. Black silicon carbide (Carborundum) is one of the most commonly used abrasives, featuring hard and angular grains that make for effective processing of

Silicon carbide (SiC) possesses an unusual crystal structure. It contains four Si and four C atoms in an ordered coordination tetrahedral arrangement with layers stacked into polytypes forming its primary coordination tetrahedron. Electrically, silicon carbide has the ability to withstand voltages five-ten times higher than silicon. This makes it an excellent material choice for power

Technology advances are once-in-a-generation events for semiconductor businesses, and those that accept them stand to reap enormous profits. Cree, now Wolfspeed, stands to benefit from the trend towards silicon carbide power devices. Their innovations in device design and production allow them to manufacture smaller chips with equal power ratings on each wafer – thus expanding

Okamoto et al. measured the conductivity of silicon carbide at various temperatures and found that small amounts of Si additive did not increase conductivity by two to three orders of magnitude, but exceeding 5 mol% caused conductivity levels to soar by up to three orders of magnitude. Silicon carbide is a semiconductor material, capable of

Amorphous silicon carbide (a-SiC) has gained immense attention due to its variable optical and electronic properties. As it features rigidity, low thermal expansion rates, and visible light transparency it makes an attractive material for telescope mirrors. Material science is experiencing a revolution with the introduction of this novel material: a-SiC. With properties combining strength with

4H-SiC is an increasingly popular polytype of silicon carbide. Due to its wide bandgap and excellent thermal, electrical, and mechanical properties, it makes an ideal material for power electronics applications. We investigated the elastic deformation and cracking behavior of a single crystal 4H-SiC pillar specimen with [0001] orientation by performing four times loading-unloading compression strain

Silicon carbide whiskers, single-crystal micron-sized particles with outstanding physical and chemical properties, have garnered significant research interest due to their wide-ranging applications across many fields including high temperature structural materials and tool ceramics. Mullite ceramic is a highly chemically stable refractory material with superior mechanical and physical properties such as high hardness and temperature creep

Technologia inwerterów z węglika krzemu jest ekscytującym osiągnięciem w dziedzinie półprzewodników mocy. Ma ona kilka zalet w porównaniu z konwencjonalnymi urządzeniami krzemowymi, w tym nawet dziesięciokrotnie niższe straty mocy i lepszą wydajność termiczną. McLaren Applied wykorzystuje wysokonapięciowy tranzystor polowy CoolSiC (MOSFET), zaprojektowany specjalnie do obsługi systemów wysokiego napięcia 800 V, występujących w systemach elektrycznych.

Węglik krzemu, częściej określany jako karborund, to niezwykle twardy syntetyczny związek krystaliczny składający się z krzemu i węgla, charakteryzujący się wysoką przewodnością cieplną, niskim współczynnikiem rozszerzalności, odpornością na reakcje chemiczne i zdolnościami półprzewodnikowymi. Moissanit, jego naturalny odpowiednik, występuje jako minerał, ale można go znaleźć tylko w bardzo ograniczonych ilościach w