Wissen

Silicon Carbide (SiC) can withstand the high voltage demands of electric vehicle power systems. Wolfspeed offers isolation solutions designed specifically to support SiC designs for traction control inverters. Silicon Carbide Market Growth Automotive industry growth is driving market growth of silicon carbide while its high temperature resistance drive the demand from the refractory sector. Automotive […]

Siliziumkarbid ist ein unglaubliches Material mit außergewöhnlicher Härte und Haltbarkeit, das jeden Handwerkswerkzeugsatz revolutioniert. Handwerker können es nutzen, um Oberflächen mit Präzision und Leichtigkeit zu formen, zu glätten und zu ebnen - und so ihren Endbearbeitungsprozess zu verbessern und Handwerkern Zugang zu Präzisionsendbearbeitungsmöglichkeiten zu verschaffen. Ganz gleich, welches Material geschliffen wird - empfindliche Furniere oder dichte

Siliziumkarbid wird in elektronischen Geräten verwendet, die Signale innerhalb eines elektrischen Schaltkreises verstärken, schalten oder umwandeln. Aufgrund seines geringeren Spannungswiderstands und seiner Temperaturbeständigkeit können diese Geräte bei höheren Frequenzen mit weniger Leistungsverlusten arbeiten. SiC wird in einem Elektroofen nach dem Acheson-Verfahren und durch Erhitzen von Quarzsand hergestellt

Silicon Carbide MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are essential elements in power electronic applications, offering wide bandgap, high breakdown voltage and current density characteristics. These power supplies are particularly suited for hard-switching topologies like LLC and ZVS, providing higher system efficiency with smaller components for more compact designs at reduced system costs and an energy efficient

Silicon carbide (SiC) is an ultrahard synthetic material first synthesized in 1891 by Edward Acheson in a furnace heated with carbon and alumina. Since its release into industry as an industrial abrasive in the 1920s, SiC has quickly become one of the most sought-after materials on a large scale. SiC comes in various crystal structures

Silicon carbide wafers are used as substrates in power electronic devices such as diodes and MOSFETs, offering superior hardness, stability under heat and voltage and non-reactivity with respect to oxidation resistance. Available in 100mm and 150mm diameter sizes. These substrates also provide protection from thermal shock caused by sudden changes in temperature, with their low

Reaction-bonded silicon carbide is an ultra-resilient ceramic material that offers exceptional strength against impact and wear, thermal shock resistance, and chemical attack. Formulations of porous SiC and carbon particles, when infiltrated with liquid or gaseous silicon, become self-bonding due to chemical reaction between silicon and carbon. Silicon reacts with carbon to form additional silicon carbide

Silicon Carbide is one of the hardest and most durable advanced ceramic materials. It can maintain its strength at high temperatures while offering resistance against acids, alkalis and molten salts. CVD SiC, produced through chemical vapor deposition, is an extremely pure form with superior thermal conductivity than sintered or reaction bonded SiC. It is a

Silicon carbide is a high-performance ceramic with exceptional hardness, wear resistance and thermal conductivity properties. However, its complex geometry makes precise machining extremely challenging; diamond tools must be employed for maximum accuracy when working with it. Saint-Gobain utilizes multiple manufacturing avenues to craft the highest-grade sintered silicon carbide products. We employ reaction sintering and pressureless

Silicon carbide crucibles are designed for melting nonferrous metals such as copper, silver, gold and lead-zinc in ground furnaces or electric furnaces. Their features include high oxidation resistance, less pollution and excellent thermal conductivity. Crucibles often sustain damage due to overheating; longitudial cracks extending from bottom edge to top can result in this scenario, but