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Silicon Carbide (SiC) has emerged as an essential technological material. It’s utilized for use in abrasives, technical ceramics and refractories – as well as semiconductor manufacturing. Produced by heating silica sand mixed with carbon in the form of petroleum coke at high temperatures in huge open “Acheson” furnaces, SiC is then produced in both Green […]

Kiselkarbid är ett slipande material som vanligen används i slipskivor, slipband och blästermedel. Det är en oorganisk kemisk förening som konkurrerar med diamant och borkarbid när det gäller hårdhet. Svart kiselkarbid (Carborundum) är ett av de vanligaste slipmedlen, med hårda och kantiga korn som möjliggör effektiv bearbetning av

Kiselkarbid (SiC) har en ovanlig kristallstruktur. Den innehåller fyra Si- och fyra C-atomer i ett ordnat koordinationstetraederarrangemang med lager staplade i polytyper som bildar dess primära koordinationstetraeder. Elektriskt har kiselkarbid förmågan att motstå spänningar som är fem-tio gånger högre än kisel. Detta gör det till ett utmärkt materialval för kraft

För halvledarföretagen är tekniska framsteg händelser som inträffar en gång i generationen, och de som tar till sig dem kan skörda enorma vinster. Cree, numera Wolfspeed, kan dra nytta av trenden mot kiselkarbidbaserade kraftkretsar. Deras innovationer inom konstruktion och produktion gör det möjligt för dem att tillverka mindre chip med samma effekt på varje skiva - och därmed utöka

Okamoto et al. measured the conductivity of silicon carbide at various temperatures and found that small amounts of Si additive did not increase conductivity by two to three orders of magnitude, but exceeding 5 mol% caused conductivity levels to soar by up to three orders of magnitude. Silicon carbide is a semiconductor material, capable of

Amorphous silicon carbide (a-SiC) has gained immense attention due to its variable optical and electronic properties. As it features rigidity, low thermal expansion rates, and visible light transparency it makes an attractive material for telescope mirrors. Material science is experiencing a revolution with the introduction of this novel material: a-SiC. With properties combining strength with

4H-SiC is an increasingly popular polytype of silicon carbide. Due to its wide bandgap and excellent thermal, electrical, and mechanical properties, it makes an ideal material for power electronics applications. We investigated the elastic deformation and cracking behavior of a single crystal 4H-SiC pillar specimen with [0001] orientation by performing four times loading-unloading compression strain

Silicon carbide whiskers, single-crystal micron-sized particles with outstanding physical and chemical properties, have garnered significant research interest due to their wide-ranging applications across many fields including high temperature structural materials and tool ceramics. Mullite ceramic is a highly chemically stable refractory material with superior mechanical and physical properties such as high hardness and temperature creep

Silicon carbide inverter technology is an exciting power semiconductor advancement. It boasts several advantages over conventional silicon devices, including lower power losses up to ten times less and improved thermal performance. McLaren Applied is employing a high-voltage CoolSiC metal oxide semiconductor field-effect transistor (MOSFET), designed specifically to handle high voltage 800-volt systems found in electric

Silicon carbide, more commonly referred to as carborundum, is an extremely hard synthetic crystalline compound made up of silicon and carbon characterized by high thermal conductivity, low coefficient of expansion, resistance to chemical reaction and semiconducting capabilities. Moissanite, its natural counterpart, occurs as a mineral but can only be found in very limited amounts in