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Carbură de siliciu amorfă

Amorphous silicon carbide (a-SiC) boasts impressive mechanical and strength properties that could revolutionize various industries. Its yield strength surpasses that of well-known materials like Kevlar, making it suitable for applications including microchip sensors and advanced solar cells. a-SiC stands out from its competition due to its superior tensile strength and versatility, being capable of fabrication […]

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Coherent Secures $1 Billion Investment in Silicon Carbide Power Substrates for Electric Vehicles

Coherent of Saxonburg, PA announced on April 8 that Japanese auto suppliers DENSO and Mitsubishi Electric have invested $1 billion into its silicon carbide business, holding a 12.5% non-controlling stake in a newly established subsidiary that will operate the business under Sohail Khan, Executive VP of New Ventures and Wide Bandgap Electronics Technology at Coherent.

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Silicon Carbide Tubes

Silicon carbide (SiC) is an amazing material with remarkable strength and resilience. Able to endure high temperatures, harsh chemicals and corrosion resistance – these characteristics make SiC an unparalleled material. When selecting a silicon carbide tube for your project, several elements need to be taken into account such as temperature, pressure, corrosion-prone environment and size/shape.

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United Silicon Carbide Inc

United Silicon Carbide Inc, is a manufacturer of semiconductors. The Company produces silicon carbide (SiC) power semiconductors such as FETs, JFETs and Schottky diodes for customers located throughout New Jersey. United Silicon Carbide also serves customers worldwide through their global operations. Silicon carbide market growth will likely be propelled by rising demand for high-performance power

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Știri despre carbura de siliciu

Carbura de siliciu este una dintre cele mai dure substanțe cunoscute, utilizată ca abraziv sintetic și prezentă în stare naturală sub formă de moissanite în meteoriți; de asemenea, poate fi extrasă. Proprietățile de bandă largă ale SiC îi permit să minimizeze pierderile de comutare, suportând în același timp frecvențe mai mari, ceea ce îl face ideal pentru utilizarea în dispozitive semiconductoare de putere de înaltă tensiune, cum ar fi invertoarele din sistemele electrice

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