Siliziumkarbid treibt eine Revolution in der Leistungselektronik voran
SiC has an expansive bandgap that enables power systems to operate at higher temperatures, voltages and frequencies without incurring additional BOM costs, leading to lower costs overall and more efficient and smaller devices. Silicon carbide was, until 1929 when boron carbide was developed, the toughest known synthetic material with a Mohs hardness rating of 9, […]
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