Wissen

Silicon carbide is an increasingly popular material choice for use in electronics applications due to its hardness, thermal conductivity and chemical stability properties. Furthermore, its insulation qualities make it suitable for circuit boards and other components. Silicon carbide’s wider bandgap makes it suitable for use in semiconductor electronics devices that operate at higher frequencies and […]

Vor der Einführung von Heißflächenzündern wurden Gasöfen mit Funken gezündet. Eine kleine Zündflamme brannte das ganze Jahr über, und das Gas strömte nur bei Bedarf. Diese Zündgeräte bestehen aus Siliziumkarbid oder Siliziumnitrid und verfügen über Keramiksockel zur Isolierung der Drahtverbindungen. Der Betriebsspannungsbereich beträgt 80 bis 240 V DC. 1. Lange Lebensdauer

Bandlücken messen die Energie, die Elektronen und Löcher benötigen, um von ihren jeweiligen Valenzbändern in die Leitungsbänder überzugehen. Halbleiter mit breiteren Bandlücken wie Galliumnitrid (GaN) oder Siliziumkarbid (SiC) verfügen über deutlich größere Bandlücken als herkömmliches Silizium, wodurch sich diese Materialien für Hochspannungs-/Frequenzanwendungen eignen. 1. Breite

Like diamond, graphene and other exotic materials, amorphous silicon carbide (a-SiC) is an exceptionally strong material – however unlike its crystalline counterparts it does not exhibit long range order in its atomic arrangement. This anomaly helps explain how this material manages to achieve such remarkable tensile strength; Professor Norte estimates that up to 10 medium-sized

Silicon carbide semiconductors boast wider bandgaps that enable electrical energy transfer more efficiently than their silicon counterparts, making them suitable for applications like power electronics for electric vehicles and space exploration instruments. This makes silicon carbide particularly suited for use on rovers and probes. Coherent is establishing a new subsidiary to supply 150 mm and

Silicon carbide is an innovative material capable of revolutionizing industrial processes. This groundbreaking substance stands up well to extreme temperatures, abrasive environments and corrosion while offering exceptional strength and longevity. Silicon carbide tubes boast second only to diamond in terms of hardness and can transport chemicals without degradation – two features which make them perfect

Silicon carbide is revolutionizing power electronics. It is slowly replacing traditional silicon transistors while offering significant performance enhancements. Due to the physical and electronic properties of material, engineers may find themselves reluctant to adopt this technology. Unfortunately, misconceptions may hold them back from adopting it fully. Silicon carbide occurs naturally as moissanite gems and synthetically

Silicon carbide’s hard and rigid surface properties make it an excellent mirror material for astronomical telescopes, and also form a key part of power electronics in terrestrial electric vehicles and spacecraft probes. Khan notes that DENSO and Mitsubishi Electric are two leading system companies actively procuring SiC chips on both substrate and epiwafer levels. What

Silicon carbide is one of the hardest materials used to craft abrasive tools. It can withstand extremes of both heat and pressure without becoming damaged or becoming compromised in performance. These discs are ideal for sanding and polishing hard natural stone surfaces, providing fast material removal while simultaneously creating a sleek surface finish. Available in

Silicon Carbide (SiC) is an inorganic semiconductor material with an extremely wide bandgap that can alternately act as either an electrical conductor or insulator, making it useful in power electronics due to its superior electrical conductivity over traditional silicon semiconductors. EAG Laboratories has extensive expertise in performing bulk and spatially resolved analytic techniques on SiC