This Dremel silicon carbide grinding stone works great on many surfaces and is especially helpful when etching glass. As its aluminum oxide counterpart, it offers tougher bits that work well on harder materials like glass. In addition to working well on such items as stone, ceramics, porcelain and nonferrous metals it comes equipped with a […]

Silicon Carbide (SiC) is an extremely hard and synthetically produced crystalline compound of silicon and carbon, popularly referred to as carborundum. Mohs hardness rating of 9 makes it similar to diamond and it can be used as an abrasive and in refractory products such as furnace linings. Silicon is another material with great potential for

Silicon carbide is an extremely useful material with applications in numerous industries. While naturally found as moissanite mineral deposits, most Silicon Carbide (SC) production nowadays takes place synthetically. With its high breakage voltage and low turn-on resistance, silicon wafers make excellent components for semiconductor devices. Furthermore, their corrosion resistance ensures it can withstand high temperatures

Silicon carbide is a compound often utilized in power electronics devices. It possesses various attributes that can improve performance over silicon-based devices, including increased blocking voltage capacities and reduced specific on-resistance. Littelfuse’s research on these attributes has resulted in new technology designed to increase efficiency within AGPU-based systems. Littelfuse has successfully conducted extensive trials using

Silicon carbide balls are designed to withstand harsh environments and can be found in numerous applications ranging from bearings and energy systems, to precision semiconductor manufacturing. Carborundum occurs naturally as the mineral moissanite, but has been mass produced since 1893 for use as an abrasive material and raw material in steelmaking. Hardness Silicon carbide (SiC)

Silicon Carbide (SiC) has rapidly emerged as an ideal material for monolithically integrated photonics applications, due to its combination of high refractive index, wide bandgap, low thermal expansion coefficient, and excellent rigidity properties. SiC is also an excellent material choice for making mirrors in astronomical telescopes. Ellipsometric results illustrate that transmittance and refractive index of

Silicon carbide is an advanced semiconductor material capable of conducting electricity at high temperatures while remaining resistant to oxidation and handling high voltages, making it the perfect material choice for applications such as car brakes and clutches as well as bulletproof vests. Dopants such as aluminum, boron and gallium can help control the electrical conductivity

Карбид кремния - это полупроводниковый материал со свойствами, находящимися между металлами и изоляторами. Последние зависят от таких факторов, как температура и наличие примесей в кристаллической структуре; что касается первых, то электрические свойства также зависят от этих переменных. Эдвард Гудрич Ачесон впервые создал SiC в 1891 году, пытаясь получить искусственные алмазы с помощью электрического

Карбид кремния (SiC) - это прочная неоксидная керамика, известная своей прочностью и термостойкостью. Его можно найти в приложениях, требующих высокой теплостойкости при минимальном расширении. Теплопроводность SiC повышается с температурой до определенного момента, однако из-за примесей или структурных дефектов она постепенно снижается со временем - это явление

Технология карбида кремния получила огромное распространение среди производителей силовой электроники. Эта тенденция во многом объясняется растущим спросом на электромобили и соответствующую зарядную инфраструктуру. SiC является отличным материалом для различных применений благодаря своей невероятной твердости, прочности и антикоррозийным свойствам. Высокотемпературный карбид кремния привлек к себе повышенное внимание