炭化ケイ素がパワーエレクトロニクスに革命をもたらす
SiC has an expansive bandgap that enables power systems to operate at higher temperatures, voltages and frequencies without incurring additional BOM costs, leading to lower costs overall and more efficient and smaller devices. Silicon carbide was, until 1929 when boron carbide was developed, the toughest known synthetic material with a Mohs hardness rating of 9, and could even compare closely with diamond. Physical Properties Silicon carbide’s remarkable physical and electrical properties are sparking an unprecedented revolution in power electronics. A wide bandgap semiconductor, it provides opportunities for smaller, faster and more reliable electronics that can handle higher temperatures, voltages and frequencies than their silicon counterparts. Solar systems rely heavily on […]
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