Silicon carbide semiconductors boast wider bandgaps that enable electrical energy transfer more efficiently than their silicon counterparts, making them suitable for applications like power electronics for electric vehicles and space exploration instruments. This makes silicon carbide particularly suited for use on rovers and probes. Coherent is establishing a new subsidiary to supply 150 mm and […]

Silicon carbide is an innovative material capable of revolutionizing industrial processes. This groundbreaking substance stands up well to extreme temperatures, abrasive environments and corrosion while offering exceptional strength and longevity. Silicon carbide tubes boast second only to diamond in terms of hardness and can transport chemicals without degradation – two features which make them perfect

Silicon carbide is revolutionizing power electronics. It is slowly replacing traditional silicon transistors while offering significant performance enhancements. Due to the physical and electronic properties of material, engineers may find themselves reluctant to adopt this technology. Unfortunately, misconceptions may hold them back from adopting it fully. Silicon carbide occurs naturally as moissanite gems and synthetically

Silicon carbide’s hard and rigid surface properties make it an excellent mirror material for astronomical telescopes, and also form a key part of power electronics in terrestrial electric vehicles and spacecraft probes. Khan notes that DENSO and Mitsubishi Electric are two leading system companies actively procuring SiC chips on both substrate and epiwafer levels. What

Silicon carbide is one of the hardest materials used to craft abrasive tools. It can withstand extremes of both heat and pressure without becoming damaged or becoming compromised in performance. These discs are ideal for sanding and polishing hard natural stone surfaces, providing fast material removal while simultaneously creating a sleek surface finish. Available in

Silicon Carbide (SiC) is an inorganic semiconductor material with an extremely wide bandgap that can alternately act as either an electrical conductor or insulator, making it useful in power electronics due to its superior electrical conductivity over traditional silicon semiconductors. EAG Laboratories has extensive expertise in performing bulk and spatially resolved analytic techniques on SiC

Silicon Carbide (SiC) has emerged as an essential technological material. It’s utilized for use in abrasives, technical ceramics and refractories – as well as semiconductor manufacturing. Produced by heating silica sand mixed with carbon in the form of petroleum coke at high temperatures in huge open “Acheson” furnaces, SiC is then produced in both Green

Silicon carbide is an abrasive material commonly found in grinding wheels, sanding belts and blast media. As an inorganic chemical compound it competes with diamond and boron carbide in terms of hardness. Black silicon carbide (Carborundum) is one of the most commonly used abrasives, featuring hard and angular grains that make for effective processing of

Siliciumcarbid (SiC) weist eine ungewöhnliche Kristallstruktur auf. Es enthält vier Si- und vier C-Atome in einer geordneten tetraedrischen Koordinationsanordnung mit Schichten, die zu Polytypen gestapelt sind und das primäre Koordinationstetraeder bilden. Elektrisch gesehen kann Siliziumkarbid Spannungen widerstehen, die fünf- bis zehnmal höher sind als die von Silizium. Dies macht es zu einem ausgezeichneten Material für die Stromerzeugung

Technologische Fortschritte sind für Halbleiterunternehmen einmalige Ereignisse, und diejenigen, die sie annehmen, können enorme Gewinne erzielen. Cree, jetzt Wolfspeed, wird vom Trend zu Siliziumkarbid-Leistungsbauelementen profitieren. Ihre Innovationen in der Konstruktion und Produktion von Bauelementen ermöglichen es ihnen, kleinere Chips mit gleicher Leistung auf jedem Wafer herzustellen - und damit die