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Alumina ceramic is an extremely hard and strong material with many applications, from high temperature furnaces to manufacturing tools, abrasives and cutting products. Furthermore, this material boasts excellent wear resistance. ACI-99.5 alumina is ideal for crafting ceramic-to-metal feedthroughs and hermetic components used in electron tube assemblies such as X-ray tubes. Furthermore, it can also be […]

Silicon carbide (SiC) is an extremely hard, synthetically produced crystalline compound of silicon and carbon that finds applications across industries including refractory linings for industrial furnaces, high temperature petrochemical applications and semiconductor electronics substrates. Black silicon carbide is a tough yet friable abrasive material commonly used for processing low-tensile strength materials like glass and stone.

Service technicians often feel that silicon carbide igniters are too fragile to handle safely, and are concerned that hand oils could wreak havoc with them. These ignitors are very reliable. When powered with 120 volts, they light up red hot and start the flow of gas into the furnace, lighting it up. Long Lifespan Hot

Unleash the full potential of your industrial processes with premium silicon carbide heating elements. These tough, corrosion-resistant devices can be tailored specifically to the design of your furnace. Keith Company provides various silicon carbide heating elements tailored to specific industrial applications, such as the GC Type. This element was designed for continuous high temperature operations

Moissanite, an naturally-occurring form of silicon carbide (SiC), can be found as inclusions in meteorites, corundum deposits and rare kimberlites. Moissanite can also be created artificially using traditional sintering and hot pressing techniques in a laboratory environment. Moissanite gemstones used in jewelry are generally manufactured synthetically in laboratories. Here is how this remarkable gemstone comes

Silicon carbide is an extremely hard material that lies somewhere between alumina and diamond on the Mohs scale, offering exceptional strength, corrosion resistance, durability, strength, high melting point and other engineering advantages that make it perfect for challenging engineering applications. Impurities called doping agents can also impart semi-conducting properties. Nitrogen and phosphorus doping creates an

Most hot surface igniters found on furnaces today are made from silicon carbide and run at 120 volts, but are prone to breaking if exposed to voltages outside their ideal range or handled roughly. Silicon nitride igniters are significantly tougher and longer-lasting than their silicon carbide predecessors, making them an attractive upsell option for customers

Silicon carbide is an extremely reliable wide band-gap semiconductor material. This allows devices made of it to operate at higher voltages, frequencies, and temperatures than conventional silicon devices. Monolayer SiC could be the catalyst to revolutionary advances in high-temperature electronics and power devices. It offers unmatched optical, mechanical, chemical and magnetic properties for unrivaled functionality

Amorphes Siliziumkarbid (a-SiC) verfügt über beeindruckende mechanische Eigenschaften und eine hohe Festigkeit, die verschiedene Branchen revolutionieren könnten. Seine Streckgrenze übertrifft die von bekannten Materialien wie Kevlar, wodurch es sich für Anwendungen wie Mikrochip-Sensoren und fortschrittliche Solarzellen eignet. a-SiC hebt sich von seinen Konkurrenten durch seine überragende Zugfestigkeit und Vielseitigkeit ab, denn es kann hergestellt werden

Coherent aus Saxonburg, PA, gab am 8. April bekannt, dass die japanischen Automobilzulieferer DENSO und Mitsubishi Electric $1 Milliarde in ihr Siliziumkarbid-Geschäft investiert haben. Sie halten einen nicht beherrschenden Anteil von 12,5% an einer neu gegründeten Tochtergesellschaft, die das Geschäft unter der Leitung von Sohail Khan, Executive VP of New Ventures and Wide Bandgap Electronics Technology bei Coherent, betreiben wird.