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Amorphous silicon carbide (a-SiC) has gained immense attention due to its variable optical and electronic properties. As it features rigidity, low thermal expansion rates, and visible light transparency it makes an attractive material for telescope mirrors.

Material science is experiencing a revolution with the introduction of this novel material: a-SiC. With properties combining strength with randomness and precision, its impact may revolutionize microchip technology.


Crystalline silicon carbide (c-SiC) is typically much stronger than its amorphous counterpart; however, a new discovery in an amorphous Si-C thin film opens the door for high performance mechanical and optical devices. With an ultimate tensile strength of 10GPa for wafer-scale thin film production amorphous SiC has entered an elite club reserved for only the strongest materials such as graphene nanoribbons.

Si-C-based films can be produced at wafer scale and easily conform to various substrates, making them highly adaptable and featuring superior chemical inertness, hardness and mechanical stability compared with other coatings [1. This makes them suitable as protective coatings while they also serve as reinforcement material in ceramic matrix composites used in gas combustors, thermal printing heads and fuel cells; also used extensively as MEMS sensors and integrated photonics applications [1-3].

a-SiC can easily be doped with nitrogen and phosphorus to form an n-type semiconductor, while doping with boron, aluminium and gallium will convert it to p-type status. Furthermore, due to its strength, transparent to visible light by replacing silicon atoms with carbon atoms allows more design flexibility during device fabrication and device design and fabrication processes. a-SiC deposits using low temperature chemical vapour deposition (CVD) as a viable alternative to c-SiC and its counterpart c-SiC.


Amorphous silicon carbide (a-SiC) has quickly grown increasingly popular due to its vast potential in various fields of application. One of its most remarkable properties is its strength; defying traditional expectations by stretching up to 10 gigaPascal (GPa). That means you could hang 10 medium-sized cars off of one strip of duct tape before it gives way due to stress.

Strength is achieved in a-SiC due to its disordered atomic structure. While crystalline silicon features fourfold coordinated atoms arranged into an ordered crystal lattice, a-SiC’s random arrangements create a continuous random network which makes the material extremely strong.

Pulsed magnetron sputtering produces films made of a-SiC with either a columnar or cauliflower-like structure, depending on their sputtering power. After annealing, this structure relaxes, with more heteronuclear (Si-Si) bonds than homonuclear (Si-C) bonds being present in the structure.

Structure diversity allows synthesis procedures to tailor various electronic and optical properties of SiC to individual applications, from chemical modifications such as adding hydrogen to deposition gas for chemical alteration to mechanical fabrication with 4.66×105 quality factors achieved at room temperature ring resonators fabricated using this material – two characteristics which provide tremendous control of its electronic and optical properties.


Amorphous silicon carbide stands out among other well-known materials like graphene and diamonds with its unique amorphous nature; unlike graphene which is comprised of one layer of carbon, which makes up its entire composition; as opposed to being scaleable like graphene it provides much greater versatility for use across many applications.

Amorphous silicon carbide has long been chosen as the active layer for TFT elements used in large-area electronics applications like liquid-crystal displays (LCDs). This choice is due to its lower costs and superior electronic performance compared to crystalline silicon.

But its amorphous structure also lends it an important advantage: resistance to brittleness. Norte elaborates: Most materials have ordered structures like Lego towers; however, amorphous silicon carbide lacks this pattern and more closely resembles randomly stacked Lego blocks than an intricately assembled one. Although this may seem counterintuitive, its lack of uniformity actually increases strength.

As such, strips of amorphous silicon carbide can withstand 10x more tensile stress than its diamond equivalent, making it the ideal candidate for precise on-chip tensile testing. Furthermore, its amorphous nature lends itself well to dry etchants which cause minimal perturbations to suspended nanostructures for accurate testing compared to wet etchants which could compromise its crystal structure in contrast with crystalline silicon which requires wet etchants which could disrupt its integrity altogether.


As opposed to graphene or diamond, which require scarce and expensive production processes, amorphous silicon carbide can be mass-produced on wafer-scale production lines – opening up new possibilities for designing microchip sensors that are both precise and robust.

Amorphous silicon carbide is an extraordinary material that combines randomness with precision. Its tensile strength surpasses that of popular materials like Kevlar; for perspective, breaking one strip would take an equivalent weight to 12 medium-sized cars!

An impressive feat for such a thin material. Scalability translates to high mechanical resilience for suspension of delicate nanostrings. This shows an ability to achieve high yield strength in complex suspended structures, opening doors for applications like ultrasensitive microchip sensors, advanced solar cells and space exploration technologies.

a-SiC exhibits excellent chemical resistance against the common surface micromachining etchants used today, making it the ideal material to serve as a sacrificial layer in micromachining processes. Furthermore, its chemical inertness permits dry etchants that allow undercuts to be etched without damaging nanostring structures; setting the foundation for future research that explores harnessing its inherent flexible robust properties.

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