Výhody striedača na báze karbidu kremíka pre elektrické vozidlá (EV)

Silicon carbide inverter technology is an exciting power semiconductor advancement. It boasts several advantages over conventional silicon devices, including lower power losses up to ten times less and improved thermal performance.

McLaren Applied is employing a high-voltage CoolSiC metal oxide semiconductor field-effect transistor (MOSFET), designed specifically to handle high voltage 800-volt systems found in electric vehicle traction inverters.

Power density

Power density refers to the amount of electricity an inverter can generate per unit volume, an important consideration in electric vehicle applications that must operate at high voltages and frequencies for maximum energy efficiency. To accomplish this objective, manufacturers must reduce overall size while increasing output power – something which silicon carbide inverters excel at doing with very high power densities that make them considerably smaller than traditional inverters.

Parasitic inductance must be limited for increased power density to occur, as excessive inductance can cause problems like voltage ringing and elevated EMI emissions as well as interfering with low voltage signals from current sensors. To limit inductance effectively, designers should carefully consider power module specifications, bussing technology, DC link capacitors and thermal stackup when designing these solutions.

Silicon carbide’s wide bandgap allows transistors to tolerate higher voltages and temperatures than typical silicon semiconductors, enabling higher operating frequencies that increase efficiency while decreasing power losses. Furthermore, silicon carbide material serves as a great conductor of heat; three times better than silicon and second only to diamond.

NREL’s research into wide-bandgap power module thermal management has allowed them to develop forced air cooling for SiC inverters, which allows them to reduce component footprint, improve performance and efficiency as well as support higher-frequency operation for heavy duty applications.


Power electronics for electric vehicles (EVs) play an enormous role in efficiency (and therefore range and charging times). In particular, an inverter plays an essential role, converting DC energy stored in batteries into AC energy needed for driving. Silicon carbide (SiC) technology may offer a solution to these high voltage demands with ease; already it is making its way into EV inverters.

SiC semiconductor devices outshone traditional insulated gate bipolar transistors (IGBT). They can operate at higher temperatures and boast higher breakdown fields while boasting superior thermal conductivity – this means more current can be delivered with lower losses and improved efficiency.

SiC’s wide bandgap allows devices made of it to withstand much higher voltages and temperatures than silicon (Si) counterparts, leading to fewer failure modes and improved reliability over time – an especially valuable attribute in inverters where long-term dependability is crucial for long-term operation.

To maximize the effectiveness of a silicon carbide inverter, its design process must take account of its advantages. This involves careful PCB layout, efficient power routing and using thermal management techniques effectively. Furthermore, rigorous testing and quality assurance techniques must also be employed in order to guarantee that the final product meets performance, efficiency and reliability goals – including functional testing, electrical performance characterization analysis and efficiency measurements.


Silicon carbide (SiC) is an extremely hard compound semiconductor material. Additionally, it has superior heat-resistance and higher breakdown voltage – characteristics which make it ideal for high voltage power applications like inverters.

Silicone carbide inverters have become more reliable thanks to advances in manufacturing techniques. This includes new PCB layouts and thermal management strategies. These designs make it easier to reduce noise, increase efficiency, handle high currents and handle higher currents without overheating; improve thermal characterization measurement capabilities which helps manufacturers quickly identify problems; as well as ensure they meet safety standards and electromagnetic compatibility regulations.

SiC MOSFETs stand out from traditional Si transistors by their lower resistance for any given area, reducing conduction power losses and improving efficiency. Furthermore, they can operate at higher temperatures and voltage levels than their traditional Si counterparts, making them the superior choice for electric vehicle traction inverters requiring greater power range for extended driving distances.

EV inverters are key components in the electrical systems of electric vehicles, converting direct current from batteries into alternating current for motor use and back into direct current for regenerative braking. As such, they’re an integral component of an EV drivetrain, and must be reliable. Engineers have experimented with various technologies; Drive System Design recently created a modular inverter design featuring an open platform to accelerate development time while still offering robust performance.


Silicon carbide inverters can be significantly lighter than their traditional counterparts. Their reduced weight enables easier installation and operation as well as greater energy conservation and lower total system costs; their improved efficiency may even extend your EV’s driving range!

Silicon carbide inverters offer many advantages beyond weight reduction, including improving power density and efficiency. Their higher switching frequency enables engineers to simplify circuit topologies and reduce component count for greater assembly cost savings; consequently, these inverters are also more cost effective and affordable to purchase and maintain.

Silicon carbide’s superior temperature resistance enables engineers to increase the switching frequency of inverters, thus decreasing thermal stress, shifting away from resonant frequencies, and decreasing ripple current, all leading to lower losses. 3rd Generation Silicon Carbide MOSFETs from ROHM enable engineers to reap these advantages without needing an external push-pull buffer.

Silicon carbide is an extremely wide-band gap material capable of operating at higher temperatures, voltages and frequencies than typical silicon semiconductors. Furthermore, its extreme hardness once made it the hardest synthetic substance on Earth before the discovery of boron carbide was discovered. Silicon carbide has many applications including body armor design and use as an abrasive for grinding/sandpaper use as well as various industrial uses.

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