O carbeto de silício impulsiona uma revolução na eletrônica de potência
SiC has an expansive bandgap that enables power systems to operate at higher temperatures, voltages and frequencies without incurring additional BOM costs, leading to lower costs overall and more efficient and smaller devices. Silicon carbide was, until 1929 when boron carbide was developed, the toughest known synthetic material with a Mohs hardness rating of 9, […]
O carbeto de silício impulsiona uma revolução na eletrônica de potência Leia mais "