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Most hot surface igniters found on furnaces today are made from silicon carbide and run at 120 volts, but are prone to breaking if exposed to voltages outside their ideal range or handled roughly. Silicon nitride igniters are significantly tougher and longer-lasting than their silicon carbide predecessors, making them an attractive upsell option for customers […]

Silisiumkarbid er et ekstremt pålitelig halvledermateriale med bredt båndgap. Dette gjør at enheter laget av dette materialet kan fungere ved høyere spenninger, frekvenser og temperaturer enn konvensjonelle silisiumenheter. Monolayer SiC kan bli en katalysator for revolusjonerende fremskritt innen høytemperaturelektronikk og kraftelektronikk. Det har enestående optiske, mekaniske, kjemiske og magnetiske egenskaper som gir uovertruffen funksjonalitet

Amorft silisiumkarbid (a-SiC) har imponerende mekaniske egenskaper og styrke som kan revolusjonere en rekke bransjer. Strekkfastheten overgår den for velkjente materialer som Kevlar, noe som gjør det egnet for bruksområder som mikrochipsensorer og avanserte solceller. a-SiC skiller seg ut fra konkurrentene på grunn av sin overlegne strekkfasthet og allsidighet, og kan brukes til å produsere

Coherent i Saxonburg, PA, kunngjorde 8. april at de japanske billeverandørene DENSO og Mitsubishi Electric har investert $1 milliard i selskapets silisiumkarbidvirksomhet, og at de har en ikke-kontrollerende eierandel på 12,5% i et nyopprettet datterselskap som skal drive virksomheten under Sohail Khan, Executive VP for New Ventures and Wide Bandgap Electronics Technology hos Coherent.

Silicon carbide (SiC) is an amazing material with remarkable strength and resilience. Able to endure high temperatures, harsh chemicals and corrosion resistance – these characteristics make SiC an unparalleled material. When selecting a silicon carbide tube for your project, several elements need to be taken into account such as temperature, pressure, corrosion-prone environment and size/shape.

Silicon carbide power devices play an integral part in improving energy efficiency of electric vehicles due to their excellent material properties. Silicon carbide in its pure form behaves as an insulator; however, when doped with impurities (dopants), it can transform into an electronic semiconductor. Dopants for this use include nitrogen or phosphorous doping for n-type

Silicon Carbide (SiC) ceramic products are well known for their resistance to corrosion, abrasion and high temperatures – qualities which also make them long-term refractory materials for burner nozzles, jet and flame tubes. SiC is an ideal material, maintaining its strength even at temperatures as high as 1600degC while offering high thermal conductivity, low thermal

United Silicon Carbide Inc, is a manufacturer of semiconductors. The Company produces silicon carbide (SiC) power semiconductors such as FETs, JFETs and Schottky diodes for customers located throughout New Jersey. United Silicon Carbide also serves customers worldwide through their global operations. Silicon carbide market growth will likely be propelled by rising demand for high-performance power

Silicon carbide diodes have become increasingly popular across a range of circuit designs due to their higher performance levels and smaller form factor than silicon devices. WeEn’s SiC Schottky Barrier Diodes come in various packages ranging from leaded and bolt-on styles to surface mount SMD devices and are subject to extensive endurance testing to ensure

The hot surface igniter (HSI) serves as an effective replacement for gas furnace spark plugs by allowing low voltage electricity to pass through it and heat it up. Once heated to its operating temperature, an HSI produces a rectified DC signal to verify there is flame present and maintain the main open gas valve position.