炭化ケイ素パワーモジュール
Silicon carbide (SiC), is an innovative new material for power applications that promises to increase system efficiency while decreasing system size, weight and form factor. Three times more thermally conductive than silicon and with lower switching losses it enables higher operating temperatures and greater voltages. SiC modules come in 2-in-1 forms that make configuring half-bridge circuits simple, making them perfect for HEV/EV traction inverters or any mission with long periods of maximum current demand. High Efficiency Silicon Carbide (SiC) power devices are one of the best ways to minimize system losses in high-powered applications. Their wide bandgap enables higher switching frequencies and voltages for increased efficiency while decreasing passive component […]