炭化ケイ素製品

Silicon carbide (SiC) is an extremely hard, synthetically produced crystalline compound of silicon and carbon that finds applications across industries including refractory linings for industrial furnaces, high temperature petrochemical applications and semiconductor electronics substrates. Black silicon carbide is a tough yet friable abrasive material commonly used for processing low-tensile strength materials like glass and stone. Additionally, vitrified points and wheels can also be manufactured using this material. High-temperature strength Silicon carbide is one of the strongest ceramic materials and ideal for high temperature applications, such as chemical plants and mills. Its strength remains consistent up to 1,400 degrees C making it perfect for chemical plants and mills while it resists […]

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Silicon Carbide Igniter For Gas Furnace

Service technicians often feel that silicon carbide igniters are too fragile to handle safely, and are concerned that hand oils could wreak havoc with them. These ignitors are very reliable. When powered with 120 volts, they light up red hot and start the flow of gas into the furnace, lighting it up. Long Lifespan Hot surface ignitors for gas furnaces use glowing red silicon carbide heated by electrical pulses to ignite gas in newer furnaces, replacing older pilot light systems. While smaller than traditional spark plugs, they still serve their function of lighting up gas. With no need for constant burning pilot lights and reduced energy usage compared to earlier

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Unlock Industrial Processes With a Silicon Carbide Heating Element

Unleash the full potential of your industrial processes with premium silicon carbide heating elements. These tough, corrosion-resistant devices can be tailored specifically to the design of your furnace. Keith Company provides various silicon carbide heating elements tailored to specific industrial applications, such as the GC Type. This element was designed for continuous high temperature operations such as chemical or glass production environments. High Temperature Resistance Silicon carbide (SiC) heating elements offer exceptional resistance to high temperatures, making them suitable for a range of applications. Durable and cost-effective, SiC heating elements can be found both airborne and subsurface reducing atmospheres to provide temperature control or precision processing – their thermal and

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Moissanite – A Gemstone Substitute

Moissanite, an naturally-occurring form of silicon carbide (SiC), can be found as inclusions in meteorites, corundum deposits and rare kimberlites. Moissanite can also be created artificially using traditional sintering and hot pressing techniques in a laboratory environment. Moissanite gemstones used in jewelry are generally manufactured synthetically in laboratories. Here is how this remarkable gemstone comes to be. Brilliance Moissanite and diamond are similar in many ways, yet have many distinguishing characteristics that set them apart. One such characteristic is their brilliance – with moissanite often appearing brighter due to refracting light more, giving it more vibrancy than diamond. Moissanite shines thanks to its iridescence, flashing a colorless rainbow of light

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How to Assess Silicon Carbide Conductivity Electrically

Silicon carbide is an extremely hard material that lies somewhere between alumina and diamond on the Mohs scale, offering exceptional strength, corrosion resistance, durability, strength, high melting point and other engineering advantages that make it perfect for challenging engineering applications. Impurities called doping agents can also impart semi-conducting properties. Nitrogen and phosphorus doping creates an n-type silicon carbide structure; aluminum, boron or gallium doping creates a p-type silicon carbide structure. Bandgap The band gap refers to the difference in energy between a solid’s conduction and valence bands; the lower this gap is, the more conductive its material is. Band gaps play an essential role in how electricity conducts: they determine

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炭化ケイ素イグナイター

Most hot surface igniters found on furnaces today are made from silicon carbide and run at 120 volts, but are prone to breaking if exposed to voltages outside their ideal range or handled roughly. Silicon nitride igniters are significantly tougher and longer-lasting than their silicon carbide predecessors, making them an attractive upsell option for customers looking to improve their system’s longevity and energy efficiency. They Heat Up Quickly Hot Surface Igniters (HSI) are used to regulate gas flow in furnaces, water heaters and other forms of heating equipment. Low-voltage high-current electricity passes through an igniter piece heated to 2500 degrees Fahrenheit before opening or sparking the pilot flame on gas

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炭化ケイ素とそのワイドバンドギャップ

Silicon carbide is an extremely reliable wide band-gap semiconductor material. This allows devices made of it to operate at higher voltages, frequencies, and temperatures than conventional silicon devices. Monolayer SiC could be the catalyst to revolutionary advances in high-temperature electronics and power devices. It offers unmatched optical, mechanical, chemical and magnetic properties for unrivaled functionality in high temperature devices. Wider band gap The band gap of semiconductors refers to the space between their valence band and conduction band; this energy gap represents the minimum amount of energy a photon requires to excite electrons from one band to the next, producing electrical currents and thus operating them effectively. Band gaps play

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アモルファス炭化ケイ素

アモルファス・シリコン・カーバイド(a-SiC)は、様々な産業に革命をもたらす可能性のある素晴らしい機械的特性と強度特性を誇っている。その降伏強度は、ケブラーのようなよく知られた材料を上回り、マイクロチップ・センサや高度な太陽電池などの用途に適している。a-SiCは、その優れた引張強度と汎用性により、ウェーハ・スケールでの製造が可能であることから、競合製品から抜きん出ている。そのため、グラフェンやダイヤモンドよりも実用的である。高い引張強度 グラフェンやダイヤモンドのような大量生産が困難な二次元(すなわち2D)材料とは対照的に、アモルファス炭化ケイ素(a-SiC)はウェーハスケールで容易に製造できるため、多くの用途で魅力的な代替材料となる。

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コヒレント社、電気自動車用炭化ケイ素パワー基板で$1億ドルの投資を獲得

ペンシルベニア州サクソンバーグのコヒレント社は4月8日、日本の自動車部品メーカーであるデンソーと三菱電機が、コヒレント社の炭化ケイ素事業に10億TP4T1投資し、コヒレント社のニューベンチャーおよびワイドバンドギャップ・エレクトロニクス・テクノロジー担当エグゼクティブ・バイスプレジデントであるソハイル・カーン氏の下で事業を運営する新設子会社に12.5%の非支配株式を保有すると発表した。SiCとは?電気自動車の需要が高まるにつれ、メーカーはコスト削減と効率向上のため、炭化ケイ素(SiC)パワー半導体チップへの投資を増やしている。SiCデバイスは、シリコン(Si)よりもコスト効率の高いエネルギー変換効率を実証している。SiC半導体はより高い周波数でスイッチングできるため、電力損失を減らしながら速度と効率を向上させることができる。

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炭化ケイ素チューブ

炭化ケイ素(SiC)は、驚異的な強度と弾力性を備えた素晴らしい素材です。高温、過酷な化学薬品、耐食性に耐えることができ、これらの特性によりSiCは比類のない材料となっています。プロジェクト用に炭化ケイ素チューブを選択する際には、温度、圧力、腐食しやすい環境、サイズ/形状など、いくつかの要素を考慮する必要があります。このガイドでは、これらの問題を取り上げ、お客様のセットアップの要件に最適な情報を得た上で決定できるようにしています。硬度 炭化ケイ素は、耐摩耗性、耐食性、熱安定性、曲げ強度、化学的不活性などの優れた特性を持つ革新的なセラミック材料です。炭化ケイ素のモース硬度は9であり、以下の硬度とほぼ同等です。

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