Silicon carbide (SiC) is an ultrahard synthetic material first synthesized in 1891 by Edward Acheson in a furnace heated with carbon and alumina. Since its release into industry as an industrial abrasive in the 1920s, SiC has quickly become one of the most sought-after materials on a large scale. SiC comes in various crystal structures […]

Silicon carbide wafers are used as substrates in power electronic devices such as diodes and MOSFETs, offering superior hardness, stability under heat and voltage and non-reactivity with respect to oxidation resistance. Available in 100mm and 150mm diameter sizes. These substrates also provide protection from thermal shock caused by sudden changes in temperature, with their low

Reaction-bonded silicon carbide is an ultra-resilient ceramic material that offers exceptional strength against impact and wear, thermal shock resistance, and chemical attack. Formulations of porous SiC and carbon particles, when infiltrated with liquid or gaseous silicon, become self-bonding due to chemical reaction between silicon and carbon. Silicon reacts with carbon to form additional silicon carbide

Silicon Carbide is one of the hardest and most durable advanced ceramic materials. It can maintain its strength at high temperatures while offering resistance against acids, alkalis and molten salts. CVD SiC, produced through chemical vapor deposition, is an extremely pure form with superior thermal conductivity than sintered or reaction bonded SiC. It is a

Silicon carbide is a high-performance ceramic with exceptional hardness, wear resistance and thermal conductivity properties. However, its complex geometry makes precise machining extremely challenging; diamond tools must be employed for maximum accuracy when working with it. Saint-Gobain utilizes multiple manufacturing avenues to craft the highest-grade sintered silicon carbide products. We employ reaction sintering and pressureless

Silicon carbide crucibles are designed for melting nonferrous metals such as copper, silver, gold and lead-zinc in ground furnaces or electric furnaces. Their features include high oxidation resistance, less pollution and excellent thermal conductivity. Crucibles often sustain damage due to overheating; longitudial cracks extending from bottom edge to top can result in this scenario, but

Silicon carbide (SiC) is an exceptionally hard crystalline compound of silicon and carbon found naturally as moissanite and has semiconductor properties. Industrially produced powder can be used in abrasive grinding and cutting operations. Edward Acheson first synthesized synthetic moissanite artificially in 1891 using electric heat from a power plant to combine silica with carbon, yielding

Kiln Furniture includes the shelves where ceramic ware sits during its firing process in a kiln. Nitrogen-bonded silicon carbide shelves make an excellent choice due to their abrasion-resistance and physical strength, providing optimal conditions for their placement within the kiln. LO-MASS shelves are 19x stronger and 50% lighter than conventional cordierite shelves while still supporting

Piikarbidihiomalaikkoja käytetään laajalti metallin hiontaan ja leikkaamiseen, ja niitä on saatavana eri raekokoja eri metallisovellusten ja kovuuksien mukaan. Kovemmat ja hauraammat materiaalit vaativat hienompia raekokoja, kun taas materiaalit, joilla on alhaisempi vetolujuus, tarvitsevat karkeampia raekokoja. Korkean kovuuden piikarbidihionta-aineet ovat huomattavasti kovempia kuin alumiinioksidihionta-aineet. Lisäksi,

Piikarbidipuolijohde tarjoaa useita etuja, jotka tekevät siitä houkuttelevan vaihtoehdon piipohjaisille laitteille, kuten sen kyky käsitellä korkeita jännitteitä, parantaa lämpöhyötysuhdetta ja pienentää sähköajoneuvojen tehoelektroniikkalaitteiden kokoa/painoa. SiC:tä esiintyy luonnossa moissanite-jalokivissä ja kimberliittiesiintymissä, mutta suurin osa siitä tuotetaan synteettisesti elektroniikkakomponenteissa käytettäväksi,