碳化硅材料特性

Silicon carbide, more commonly referred to as Carborundum, is an exceptional hard ceramic material with excellent strength and wear resistance. Furthermore, its chemical inertness allows for high thermal conductivity with a low coefficient of thermal expansion while it has excellent resistance to oxidation and degradation under high temperatures.

Contrary to conventionally crystalline materials, a-SiC’s disordered atomic structure actually contributes to its exceptional strength. This remarkable material subverts conventional concepts of material science.

Electrical Conductivity

Silicon carbide (chemical formula SiC) is one of the hardest naturally occurring substances and one of the toughest synthetic materials available today, boasting one of the lowest friction coefficients and maintaining its strength and hardness at temperatures as high as 1,400 degrees Celsius, making it an excellent material choice for component parts in demanding industrial environments. Furthermore, SiC is insoluble in water or alcohol while providing superior corrosion resistance in harsh chemical environments.

Grainy fiberglass has long been used in sandpaper and grinding wheels, and recently has also become increasingly popular as a material used in refractory linings and heating elements for industrial furnaces. Due to its ability to withstand high temperatures, chemical attack, mechanical stress and wear-and-tear, grainy fibreglass makes an excellent material choice for wafer tray supports, paddles and other components in semiconductor furnaces as well as wear-resistant parts in oil drilling machines, mills crushers and other machines. Additionally, its superior mechanical properties make it a compelling alternative for wear-resistant parts in oil drilling machines while its superior wear resistance makes it the material of choice when wear-resistant parts are required – preferred over metal for wear-resistant parts in oil drilling machines as well as spraying and coating systems. Finally its superior mechanical properties make it the preferred material choice when selecting wafer tray supports or paddles or components in semiconductor furnaces when choosing wafer tray supports or components among components of semiconductor furnaces.

Silicon Carbide is an attractive electrical conductor despite its hard nature. Doped with nitrogen or phosphorus for use as an n-type semiconductor or doped with beryllium, boron, and aluminum to produce a p-type semiconductor, doping allows Silicon Carbide to become a highly cost-competitive alternative to silicon in electronic devices. Furthermore, its wider bandgap can accommodate voltages three times greater than conventional silicon allowing the creation of lighter, compact electrical components for automotive use.

Comparative to other engineering ceramics, silicon carbide boasts moderate electrical and thermal conductivities as well as a high Young’s modulus that ensures it can withstand the demands of various industrial environments. Furthermore, its relatively low coefficient of thermal expansion helps prevent drastic dimensional changes under extreme temperature conditions, and its resistance to thermal shock and large temperature variations make it a preferred option when it comes to power distribution insulators.

High Voltage Resistance

Silicon carbide is a hard and chemically inert material with excellent heat tolerance that’s often chosen for applications requiring harsh chemical environments. Furthermore, this material’s exceptional tribological properties make it highly resistant to wear from mechanical stress or impact damage – ideal for bearings and pumps that must endure tough environments over an extended lifespan.

Silicon carbide’s high voltage resistance makes it a valuable component in electronic circuits. This characteristic stems from its wide band gap semiconductor properties – less energy is required to shift electrons into conduction band, increasing breakdown electric field strength and thus being capable of handling higher voltages – something particularly helpful in power applications, like electric vehicle battery management systems.

SiC is capable of reaching 10 times less switching losses than ordinary silicon and outshone gallium nitride in systems exceeding 1000V, making it an essential element in modern technological developments such as electric cars and solar power inverters.

Silicon carbide ceramics offer superior corrosion resistance compared to other ceramic materials, being capable of withstanding attacks from chemicals such as hydrofluoric acid, potassium chlorate, sulfuric acid, chlorine gas, hydrochloric acid and acetic acid. In addition, its thermal stability ensures it can withstand high temperatures while still remaining intact – an asset in applications that expose materials to harsh environments like industrial plants.

Silicon Carbide is manufactured using high-grade non-oxide powders that can be tailored to specific applications. It comes in various forms including sintered, bonded by reaction, liquid phase and solid state; sintered is by far the most popular industrial form due to its coarse crystalline layer made up of either a-SiC or b-SiC that remains unreacted with other material on its exterior surface – typically produced at high temperatures using techniques like dry pressing and extrusion for maximum productivity.

耐高温

Silicon carbide (SiC) is one of the hardest, strongest, and most advanced engineering ceramic materials available today. Thanks to its superior thermal conductivity, low coefficient of expansion, and corrosion-resistance characteristics it makes SiC an excellent material choice for use in extreme temperature environments while its chemical inertness also make it a valuable addition for applications involving harsh chemicals.

Silicon Carbide is composed of tightly bound structures of silicon and carbon atoms within a crystal lattice, giving it exceptional strength. Mohs Hardness of 9 ranks it at the highest on industrial hardness scale; therefore making it extremely durable against physical wear. Because of this durability and abrasion resistance it makes Silicon Carbide perfect for cutting, grinding and polishing hard brittle materials like glass, stone, refractory materials and nonferrous metals.

SiC is well-suited to high temperature applications, including use as furnace components such as hearth plates, recuperator tubes and pusher slabs in smelting furnaces as well as furniture such as firing rings, setter plates and bricks for kiln furniture.

Silicon carbide not only offers resistance to corrosion and high temperature conditions, but it is also distinguished by exceptional chemical inertness, mechanical strength, fatigue resistance and physical wear resistance – qualities which make it suitable for applications requiring abrasive and impact resistance such as shot blast nozzles and cyclone components. Physical wear resistance is another desirable attribute making silicon carbide an attractive material choice.

Silicon carbide stands out for its exceptional hardness and wear resistance while remaining lightweight enough to be easily handled. Furthermore, it boasts excellent vibration dampening qualities making it the ideal material for applications subject to heavy mechanical loads or pressures.

Silicon carbide’s remarkable resistance to corrosion and heat make it an attractive material choice for electrical applications that demand a high-performance semiconductor. Its voltage resistance is 10 times higher than ordinary silicon, outperforming gallium nitride in systems exceeding 1000V.

Silicon carbide comes in various polymorphic crystalline structures. Alpha silicon carbide (a-SiC), the most popular form, features hexagonal crystal structure similar to Wurtzite; while beta silicon carbide (b-SiC), more frequently found as zinc blende crystal structure that more resembles diamond.

高硬度

Silicon carbide boasts some of the highest mechanical properties known to science, second only to diamond in hardness on Mohs’ scale of hardness. This makes it particularly well suited for protective uses such as armor or body protection, while being an outstanding material choice for grinding and polishing applications.

SiC’s high hardness stems from its unique crystal structure. Composed of tightly packed tetrahedral structures of silicon and carbon atoms held together by strong covalent bonds in an ordered crystal lattice, these tetrahedral structures act as pin points which prevent dislocation movement which creates hardness – something which distinguishes it from other engineering ceramics such as aluminum oxide (AlO) which have lower hardness ratings.

SiC can be further strengthened through application of an ultrathin and thermally conductive epitaxial graphene layer using chemical vapor deposition; however, due to limited availability this type of material must generally be produced on demand.

Silicon carbide is often employed as circuit elements due to its superior high voltage resistance. With an estimated 10-times higher voltage resistance than traditional silicon and superior performance in systems exceeding 1000V, silicon carbide makes an attractive material choice for electric vehicles, solar power inverters and sensor systems.

Silicon carbide’s hardness combined with its low thermal expansion and rigidity make it a fantastic material to use in demanding environments, including 3D printing, ballistics, chemical production, energy technology as well as mechanical seals and friction bearings for pipe systems.

SiC is widely utilized as an astronomical telescope mirror material due to its hardness, which makes it especially suitable for larger telescopes that collect more light. Furthermore, its durability and rigidity also make silicon carbide an excellent material choice for spacecraft subsystems.