{"id":438,"date":"2024-06-02T23:44:51","date_gmt":"2024-06-02T15:44:51","guid":{"rendered":"https:\/\/ceramicatijolart.com\/?p=438"},"modified":"2024-06-02T23:44:51","modified_gmt":"2024-06-02T15:44:51","slug":"silisyum-karburun-iletkenligi-2","status":"publish","type":"post","link":"https:\/\/ceramicatijolart.com\/tr\/silisyum-karburun-iletkenligi-2\/","title":{"rendered":"Silisyum Karb\u00fcr\u00fcn \u0130letkenli\u011fi"},"content":{"rendered":"<p>Silikon karb\u00fcr, en hafif ve en sert seramik malzemelerden biridir; korozyona, a\u015f\u0131nmaya ve s\u00fcrt\u00fcnme kaynakl\u0131 y\u0131pranmaya kolayl\u0131kla direnir. Ayr\u0131ca, yar\u0131 iletken \u00f6zellikleri sayesinde elektrikli ara\u00e7lardaki g\u00fc\u00e7 elektroni\u011fi gibi y\u00fcksek gerilim uygulamalar\u0131 i\u00e7in uygundur.<\/p>\n<p>SiC\u2019nin iletkenli\u011fi, n-tipi yar\u0131 iletkenler i\u00e7in azot veya fosfor, p-tipi yar\u0131 iletkenler i\u00e7in ise al\u00fcminyum, bor veya galyum ile katk\u0131lama yoluyla art\u0131r\u0131labilir; ayr\u0131ca bu malzeme termal iletkenli\u011fi son derece y\u00fcksek bir malzemedir.<\/p>\n<h2>Bant aral\u0131\u011f\u0131<\/h2>\n<p>Silikon Karb\u00fcr (SiC), geni\u015f bant aral\u0131\u011f\u0131na sahip yar\u0131 iletken \u00f6zelliklere sahip, sa\u011flam bir alt\u0131gen yap\u0131l\u0131 kimyasal bile\u015fiktir. Bu \u00f6zellikleri, SiC\u2019yi silikon cihazlara k\u0131yasla daha y\u00fcksek \u00e7al\u0131\u015fma s\u0131cakl\u0131klar\u0131, daha y\u00fcksek engelleme gerilimleri ve daha d\u00fc\u015f\u00fck anahtarlama kay\u0131plar\u0131 gerektiren g\u00fc\u00e7 elektroni\u011fi cihazlar\u0131 i\u00e7in m\u00fckemmel bir aday haline getirir; ayr\u0131ca, g\u00fc\u00e7 yo\u011funlu\u011funu art\u0131ran daha ince tasar\u0131mlara olanak tan\u0131yan daha geni\u015f bant aral\u0131klar\u0131na da sahiptir.<\/p>\n<p>Silikon karb\u00fcr, di\u011fer elementlerle katk\u0131lanarak elektriksel olarak iletken hale getirilebilir; bu, yar\u0131 iletken end\u00fcstrisinde yayg\u0131n olarak uygulanan bir y\u00f6ntemdir. Katk\u0131lama, iletkenli\u011fi, \u0131s\u0131 direncini ve hassas i\u015flenebilirli\u011fi art\u0131r\u0131r \u2013 \u00f6rne\u011fin, azot veya fosfor gibi bir n-tipi katk\u0131 maddesi eklenmesi, kristal yap\u0131s\u0131 i\u00e7indeki elektron ve delik ba\u011flant\u0131s\u0131n\u0131 ve dolay\u0131s\u0131yla iletkenli\u011fi art\u0131r\u0131r.<\/p>\n<p>Silikon karb\u00fcr\u00fcn iletkenli\u011fini art\u0131rman\u0131n bir ba\u015fka y\u00f6ntemi de, iletkenli\u011fi y\u00fckseltmek amac\u0131yla kristal yap\u0131s\u0131na safs\u0131zl\u0131klar\u0131n eklenmesi olan doping i\u015flemidir. Doping, bant aral\u0131\u011f\u0131 ve \u0131s\u0131 iletkenli\u011fi gibi \u00f6zellikleri de\u011fi\u015ftirebilir. \u00d6rne\u011fin, n-tipi bir dopant ile doping yap\u0131lmas\u0131, bant aral\u0131\u011f\u0131n\u0131n boyutunu azalt\u0131r; b\u00f6ylece elektronlar bu aral\u0131\u011f\u0131 daha kolay ge\u00e7erek bant aral\u0131\u011f\u0131n\u0131n iletkenli\u011fi art\u0131ran b\u00f6lgelerine ula\u015fabilir ve sonu\u00e7 olarak iletkenlik artar.<\/p>\n<p>Silikon karb\u00fcr\u00fcn bant aral\u0131\u011f\u0131, karbon i\u00e7eri\u011finin art\u0131r\u0131lmas\u0131 veya baz\u0131 oksijen atomlar\u0131n\u0131n hidrojenle de\u011fi\u015ftirilmesi yoluyla da azalt\u0131labilir; zira karbonun silikonla ba\u011flanma enerjisi d\u00fc\u015f\u00fckken, silikon ile oksijen aras\u0131ndaki ba\u011flanma enerjisi, silikon ile azot atomlar\u0131 aras\u0131ndaki ba\u011flanma enerjisinden \u00f6nemli \u00f6l\u00e7\u00fcde daha y\u00fcksektir.<\/p>\n<p>Silikon karb\u00fcr\u00fcn bant aral\u0131\u011f\u0131 silikondan \u00fc\u00e7 kat daha geni\u015ftir; bu da onu g\u00fc\u00e7 elektroni\u011fi uygulamalar\u0131 i\u00e7in m\u00fckemmel bir malzeme haline getirir. Geni\u015f bant aral\u0131\u011f\u0131 sayesinde silikona k\u0131yasla \u00e7ok daha y\u00fcksek anahtarlama gerilimlerine ve frekanslar\u0131na dayanabilir; ayr\u0131ca bir\u00e7ok elektronik cihazda gerekli olan y\u00fcksek s\u0131cakl\u0131klara da dayanabilir.<\/p>\n<p>Silikon karb\u00fcr, son derece y\u00fcksek bir i\u00e7sel elektrik iletkenli\u011fine sahiptir ve bu iletkenlik, n-tipi veya p-tipi katk\u0131larla art\u0131r\u0131labilir. Genellikle sert ve k\u0131r\u0131lgan bir malzemedir ve renksiz bir g\u00f6r\u00fcn\u00fcme sahiptir. SiC'nin do\u011fal kaynaklar\u0131 s\u0131n\u0131rl\u0131d\u0131r: moissanit ta\u015flar\u0131nda, meteorlarda ve korindon yataklar\u0131nda zaman zaman az miktarlarda bulunur; ticari ama\u00e7la kullan\u0131lan SiC'nin \u00e7o\u011fu sentetik olarak \u00fcretilir.<\/p>\n<h2>Is\u0131 iletkenli\u011fi<\/h2>\n<p>Silikon karb\u00fcr (SiC), g\u00fc\u00e7 elektroni\u011fi, optoelektronik ve kuantum hesaplama uygulamalar\u0131nda vazge\u00e7ilmez bir malzemedir\u00b9. Yerel \u0131s\u0131 ak\u0131lar\u0131, s\u0131cakl\u0131klar\u0131 h\u0131zla y\u00fckselterek bu sistemlerin performans\u0131n\u0131 olumsuz etkileyebilir; bu nedenle SiC tabanl\u0131 elektronik sistemlerde y\u00fcksek \u0131s\u0131 iletkenli\u011fi hayati \u00f6nem ta\u015f\u0131r.<\/p>\n<p>Silikon karb\u00fcr, en yayg\u0131n metal olan bak\u0131rdan \u00f6nemli \u00f6l\u00e7\u00fcde daha y\u00fcksek bir \u0131s\u0131 iletkenli\u011fine sahiptir. Bu durum, SiC\u2019nin g\u00fc\u00e7l\u00fc atomik ba\u011flar\u0131na ve kristal kafes yap\u0131s\u0131na atfedilebilir. Ancak, bu \u00fcst\u00fcn \u0131s\u0131 iletkenli\u011fine ra\u011fmen, di\u011fer malzemelere k\u0131yasla al\u0131\u015f\u0131lmad\u0131k derecede d\u00fc\u015f\u00fck bir \u00f6zg\u00fcl \u0131s\u0131 kapasitesine sahiptir; yakla\u015f\u0131k 170 J\/kg, yani bak\u0131r\u0131n yakla\u015f\u0131k yar\u0131s\u0131 kadar.<\/p>\n<p>Daha \u00f6nce yap\u0131lan \u00e7al\u0131\u015fmalar, silikon karb\u00fcr\u00fcn \u0131s\u0131 iletkenli\u011finin, \u00f6zellikle d\u00fc\u015f\u00fck s\u0131cakl\u0131klarda, mikroyap\u0131s\u0131 ve faz bile\u015fiminden b\u00fcy\u00fck \u00f6l\u00e7\u00fcde etkilendi\u011fini ortaya koymu\u015ftur. D\u00fczensiz SiC\u2019deki fononlar\u0131n ortalama serbest yol uzunluklar\u0131, d\u00fczenli fazlardakinden daha k\u0131sad\u0131r.<\/p>\n<p>Son d\u00f6nemde, ge\u00e7ici termo-yans\u0131tma \u00f6l\u00e7\u00fcmleri kullanarak, k\u00fctle ve ince film SiC numunelerinin termal iletkenli\u011finin frekansa ba\u011fl\u0131l\u0131\u011f\u0131 \u00fczerine kapsaml\u0131 analizler ger\u00e7ekle\u015ftirdik. Hem d\u00fczensiz hem de saf 3C-SiC numunelerinde frekans\u0131n bir fonksiyonu olarak azalmalar g\u00f6zlemledik; bu e\u011filim \u00f6zellikle d\u00fc\u015f\u00fck frekansl\u0131 fononlarda daha belirgindi.<\/p>\n<p>Bu olgu, bor kusurlar\u0131n\u0131n bo\u015fluklara k\u0131yasla daha g\u00fc\u00e7l\u00fc y\u00fczey fonon sa\u00e7\u0131l\u0131m\u0131na yol a\u00e7mas\u0131yla a\u00e7\u0131klanabilir; \u0131s\u0131 iletkenli\u011finin bast\u0131r\u0131lmas\u0131 ise SiC tabanl\u0131 mikroelektronik cihazlar\u0131n termal y\u00f6netiminin iyile\u015ftirilmesinde \u00f6nemli bir rol oynamaktad\u0131r.<\/p>\n<p>En hafif ve en sert seramik malzemelerden biri olan silikon karb\u00fcr, karbon ve silikon atomlar\u0131n\u0131 tetrahedron yap\u0131s\u0131nda birle\u015ftirerek korozyona, a\u015f\u0131nmaya, erozyona ve elektrik \u00e7arpmas\u0131na dayan\u0131kl\u0131, son derece sert ve esnek bir malzeme olu\u015fturur. Y\u00fcksek Young mod\u00fcl\u00fc ve d\u00fc\u015f\u00fck \u0131s\u0131l genle\u015fme oranlar\u0131 sayesinde m\u00fckemmel bir yap\u0131sal malzeme olarak kullan\u0131lmaktad\u0131r; 1600 \u00b0C\u2019ye varan s\u0131cakl\u0131klarda mukavemetini veya sertli\u011fini kaybetmeden kullan\u0131labilen ve asitlere, alkalilere ve erimi\u015f tuzlara kolayl\u0131kla dayanabilen bu malzeme, uzun s\u00fcredir kimya tesislerinde, de\u011firmenlerde ve geni\u015fleticilerde kullan\u0131lmaktad\u0131r \u2013 astronomik teleskoplar i\u00e7in aynalar da cabas\u0131!<\/p>\n<h2>Elektriksel iletkenlik<\/h2>\n<p>Silikon karb\u00fcr\u00fcn elektrik iletkenli\u011fi s\u0131cakl\u0131\u011fa g\u00f6re de\u011fi\u015fir. D\u00fc\u015f\u00fck s\u0131cakl\u0131klarda yal\u0131tkan gibi davran\u0131r ve elektrik ak\u0131\u015f\u0131na diren\u00e7 g\u00f6sterir; ancak s\u0131cakl\u0131k artt\u0131k\u00e7a yar\u0131 iletken gibi davranmaya ba\u015flar ve elektri\u011fin daha kolay ge\u00e7mesine izin verir; bunun nedeni, daha geni\u015f bir enerji band aral\u0131\u011f\u0131na sahip olmas\u0131d\u0131r; bu da daha fazla elektronun uyar\u0131lmas\u0131na ve malzeme i\u00e7inde hareket etmesine olanak tan\u0131r.<\/p>\n<p>Silikon karb\u00fcr\u00fcn doplanmas\u0131, elektron ve delik gibi serbest y\u00fck ta\u015f\u0131y\u0131c\u0131lar\u0131 \u00fcreten safs\u0131zl\u0131klar\u0131n eklenmesi yoluyla malzemenin yal\u0131tkanl\u0131k \u00f6zelliklerinin a\u015f\u0131lmas\u0131na yard\u0131mc\u0131 olabilir; b\u00f6ylece kristal yap\u0131s\u0131 i\u00e7inde serbest\u00e7e hareket eden elektron ve delik gibi daha fazla serbest y\u00fck ta\u015f\u0131y\u0131c\u0131s\u0131 olu\u015fturulur. Doping i\u015flemiyle silikon karb\u00fcr, ya bir yal\u0131tkan ya da yar\u0131 iletken haline gelebilir; al\u00fcminyum veya galyum ile doping yap\u0131lmas\u0131 ona P-tipi yar\u0131 iletken \u00f6zellikleri kazand\u0131r\u0131rken, azot veya fosfor ilavesi ise N-tipi yar\u0131 iletken \u00f6zellikleri olu\u015fturur.<\/p>\n<p>Silikon karb\u00fcr\u00fcn \u00fcst\u00fcn bant aral\u0131\u011f\u0131 enerjisi, y\u00fcksek gerilim jenerat\u00f6rleri ve g\u00fc\u00e7 transist\u00f6rleri gibi daha y\u00fcksek gerilim gerektiren uygulamalarda kullan\u0131lmas\u0131n\u0131 sa\u011flar. Silikon karb\u00fcr, bant aral\u0131\u011f\u0131 enerjisi silikon gibi di\u011fer yar\u0131 iletken malzemelerinkini a\u015ft\u0131\u011f\u0131 i\u00e7in daha y\u00fcksek gerilimlere olanak tan\u0131r.<\/p>\n<p>Ayr\u0131ca, silikon karb\u00fcr\u00fcn \u0131s\u0131 iletkenli\u011finin yo\u011funlu\u011funa g\u00f6re de\u011fi\u015fti\u011fi de dikkat \u00e7ekicidir; yo\u011funluk artt\u0131k\u00e7a, yap\u0131s\u0131 i\u00e7indeki serbest elektron hareketinin artmas\u0131 nedeniyle \u0131s\u0131 iletkenli\u011fi de artar ve bu da fonon titre\u015fimleri yoluyla daha fazla \u0131s\u0131n\u0131n da\u011f\u0131t\u0131lmas\u0131na yol a\u00e7ar.<\/p>\n<p>Silikon karb\u00fcr, do\u011fal olarak d\u00fc\u015f\u00fck termal ve elektriksel iletkenli\u011fe sahiptir; ancak sinterleme s\u0131ras\u0131nda karbon ve bor gibi katk\u0131 maddelerinin eklenmesiyle iletkenli\u011fi art\u0131r\u0131labilir. Karbon, yap\u0131s\u0131n\u0131 de\u011fi\u015ftirerek daha fazla serbest elektronun i\u00e7inden ge\u00e7mesine olanak sa\u011flayabilir; bor ilavesi ise Seebeck katsay\u0131s\u0131n\u0131 art\u0131rabilir ve b\u00f6ylece aktivasyon enerjisini d\u00fc\u015f\u00fcrerek iletkenli\u011fin daha da iyile\u015fmesini sa\u011flayabilir.<\/p>\n<p>Silikon karb\u00fcr\u00fcn elektrik iletkenli\u011finden, metal veya seramiklerle olu\u015fturulan kompozit yap\u0131lar\u0131n bir par\u00e7as\u0131 olarak, \u00f6zellikle de yap\u0131sal bile\u015fenlerin plazmay\u0131 hapsetmek i\u00e7in manyetik alanlar olu\u015fturan s\u0131v\u0131 metal \u00f6rt\u00fcleri olarak kullan\u0131laca\u011f\u0131 n\u00fckleer f\u00fczyon reakt\u00f6rlerinde daha da fazla yararlan\u0131labilir. Bu durumlarda, kompozit yap\u0131lar\u0131n \u00fczerinden ve \u00e7evresinden akan s\u0131v\u0131 metalin neden oldu\u011fu manyetohidrodinamik etkileri en aza indirmek i\u00e7in d\u00fc\u015f\u00fck elektriksel ve termal diren\u00e7 hayati \u00f6nem ta\u015f\u0131r.<\/p>\n<h2>Ba\u015fvurular<\/h2>\n<p>Silikon karb\u00fcr\u00fcn iletkenli\u011fi, onu geleneksel yar\u0131 iletkenlerin yerine kullan\u0131lmas\u0131ndan otomobil bile\u015fenlerine ve kur\u015fun ge\u00e7irmez z\u0131rhlara kadar \u00e7e\u015fitli uygulamalarda vazge\u00e7ilmez bir malzeme haline getirir. \u00d6rne\u011fin, elektriksel iletkenli\u011fi sayesinde bir\u00e7ok farkl\u0131 ama\u00e7la kullan\u0131labilir. Silikon karb\u00fcr\u00fcn kimyasal kararl\u0131l\u0131\u011f\u0131 da onu son derece dayan\u0131kl\u0131 k\u0131lar; bu da onu yar\u0131 iletken \u00fcretim tesisleri gibi y\u00fcksek s\u0131cakl\u0131kl\u0131 ortamlar i\u00e7in ideal hale getirir.<\/p>\n<p>SiC\u2019nin iletkenli\u011fi, bant aral\u0131\u011f\u0131 taraf\u0131ndan belirlenir. Bu, elektronlar\u0131n valans band\u0131ndan iletim band\u0131na ya da valans band\u0131ndan iletim band\u0131na ge\u00e7mesi i\u00e7in gereken enerji fark\u0131n\u0131 ifade eder. Geni\u015f bant aral\u0131\u011f\u0131na sahip malzemeler yar\u0131 iletken olarak kabul edilirken, dar bant aral\u0131\u011f\u0131na sahip olanlar yal\u0131tkan g\u00f6revi g\u00f6r\u00fcr; saf silikon karb\u00fcr bir yal\u0131tkan g\u00f6revi g\u00f6r\u00fcr, ancak belirli safs\u0131zl\u0131klar i\u00e7erdi\u011finde yar\u0131 iletken \u00f6zellikler sergileyebilir.<\/p>\n<p>Silikon karb\u00fcr, karbon varl\u0131\u011f\u0131nda \u00e7ok y\u00fcksek s\u0131cakl\u0131klara \u0131s\u0131t\u0131lmak suretiyle elde edilebilir. Edward C. Acheson, 1891 y\u0131l\u0131nda bu tekni\u011fin \u00f6nc\u00fcl\u00fc\u011f\u00fcn\u00fc yapt\u0131; ark lambas\u0131ndan ve elektrikli \u0131s\u0131t\u0131c\u0131lar\u0131ndan elde edilen elektriksel \u0131s\u0131y\u0131 kullanarak kile toz k\u00f6m\u00fcr kar\u0131\u015ft\u0131rd\u0131 ve sonunda cam\u0131 \u00e7izebilecek kadar sertlikte, \"karborundum\" ad\u0131n\u0131 verdi\u011fi ye\u015fil bir madde elde etti.<\/p>\n<p>Silikon karb\u00fcr, hem diorit ve moissanit gibi kaya\u00e7larda do\u011fal olarak bulunabilir hem de sentetik olarak \u00fcretilebilir. Bu malzeme, her bir tetrahedron i\u00e7inde birbirine ba\u011flanm\u0131\u015f d\u00f6rt karbon ve d\u00f6rt silikon atomundan olu\u015fan iki birincil koordinasyon tetrahedronuna sahiptir; bu tetrahedronlar daha sonra \u00fcst \u00fcste y\u0131\u011f\u0131lmak suretiyle politipler olu\u015fturur \u2013 alfa politipi, en s\u0131k rastlanan varyant\u0131 olarak genellikle Wurtzit'e benzer alt\u0131gen kristal yap\u0131lara sahiptir.<\/p>\n<p>Silikon karb\u00fcr\u00fcn doplanmas\u0131, bor ve al\u00fcminyum gibi \u00e7e\u015fitli dopantlar\u0131n eklenmesiyle bu maddenin p-tipi ya da n-tipi yar\u0131 iletkene d\u00f6n\u00fc\u015ft\u00fcr\u00fclmesini sa\u011flar; azot ve fosfor dopantlar\u0131 ise onu n-tipi yar\u0131 iletkene d\u00f6n\u00fc\u015ft\u00fcr\u00fcr.<\/p>\n<p>I\u015f\u0131kl\u0131 De\u015farj K\u00fctle Spektrometrisi ve X-I\u015f\u0131n\u0131 Floresans Spektroskopisi, silikon karb\u00fcr\u00fcn analizinde yayg\u0131n olarak kullan\u0131lan iki genel tekniktir; daha do\u011fru analizler i\u00e7in ise kat\u0131 numuneler veya sindirilmi\u015f\/s\u00fcz\u00fclm\u00fc\u015f numuneler \u00fczerinde \u0130nd\u00fcktif Kuplajl\u0131 Plazma-Optik Emisyon Spektrometrisi veya Lazer Ablasyon-\u0130nd\u00fcktif Kuplajl\u0131 Plazma-K\u00fctle Spektrometrisi kullan\u0131labilir.<\/p>","protected":false},"excerpt":{"rendered":"<p>Silicon carbide is one of the lightest and hardest ceramic materials, resisting corrosion, abrasion and frictional wear with ease. Additionally, its semiconducting properties make it suitable for high voltage applications like power electronics on electric vehicles. Conductivity of SiC can be increased through doping with nitrogen or phosphorus for n-type semiconductors and aluminum, boron, or [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-438","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/posts\/438","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/comments?post=438"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/posts\/438\/revisions"}],"predecessor-version":[{"id":439,"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/posts\/438\/revisions\/439"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/media?parent=438"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/categories?post=438"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/tr\/wp-json\/wp\/v2\/tags?post=438"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}