Okamoto et al. measured the conductivity of silicon carbide at various temperatures and found that small amounts of Si additive did not increase conductivity by two to three orders of magnitude, but exceeding 5 mol% caused conductivity levels to soar by up to three orders of magnitude. Silicon carbide is a semiconductor material, capable of […]

Amorf silisyum karbür (a-SiC), değişken optik ve elektronik özellikleri nedeniyle büyük ilgi görmüştür. Sertlik, düşük termal genleşme oranları ve görünür ışık şeffaflığı özellikleriyle teleskop aynaları için cazip bir malzemedir. Malzeme bilimi, bu yeni malzeme olan a-SiC'in piyasaya sürülmesiyle bir devrim yaşıyor. Dayanıklılık ile mukavemeti birleştiren özellikleri ile

4H-SiC, giderek daha popüler hale gelen bir silisyum karbür poli tipidir. Geniş bant aralığı ve mükemmel termal, elektriksel ve mekanik özellikleri nedeniyle güç elektroniği uygulamaları için ideal bir malzemedir. Bu çalışmada, [0001] yönelimli tek kristal 4H-SiC sütun numunesinin elastik deformasyon ve çatlama davranışını, dört kez yükleme-boşaltma sıkıştırma gerinimi gerçekleştirerek araştırdık.

Olağanüstü fiziksel ve kimyasal özelliklere sahip tek kristalli mikron boyutlu parçacıklar olan silisyum karbür bıyıklar, yüksek sıcaklıkta yapısal malzemeler ve alet seramikleri dahil olmak üzere birçok alanda geniş kapsamlı uygulamaları nedeniyle önemli bir araştırma ilgisi toplamıştır. Mullit seramik, yüksek sertlik ve sıcaklıkta sünme gibi üstün mekanik ve fiziksel özelliklere sahip, kimyasal olarak oldukça kararlı bir refrakter malzemedir.

Silicon carbide inverter technology is an exciting power semiconductor advancement. It boasts several advantages over conventional silicon devices, including lower power losses up to ten times less and improved thermal performance. McLaren Applied is employing a high-voltage CoolSiC metal oxide semiconductor field-effect transistor (MOSFET), designed specifically to handle high voltage 800-volt systems found in electric

Silicon carbide, more commonly referred to as carborundum, is an extremely hard synthetic crystalline compound made up of silicon and carbon characterized by high thermal conductivity, low coefficient of expansion, resistance to chemical reaction and semiconducting capabilities. Moissanite, its natural counterpart, occurs as a mineral but can only be found in very limited amounts in

Silicon Carbide (SiC) can withstand the high voltage demands of electric vehicle power systems. Wolfspeed offers isolation solutions designed specifically to support SiC designs for traction control inverters. Silicon Carbide Market Growth Automotive industry growth is driving market growth of silicon carbide while its high temperature resistance drive the demand from the refractory sector. Automotive

Silicon carbide is an incredible material with exceptional hardness and durability that revolutionizes any crafting toolkit. Craftsmen can utilize it to shape, smooth and level surfaces with precision and ease – elevating their finishing process and providing craftspeople with access to precision finishing capabilities. No matter the material being sanded – delicate veneers or dense

Silicon carbide is used in electronic devices that amplify, switch or convert signals within an electrical circuit. Due to its lower voltage resistance and temperature capabilities, these devices are able to operate at higher frequencies with less power losses. SiC is produced through an electric furnace using the Acheson process and by heating silica sand

Silicon Carbide MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are essential elements in power electronic applications, offering wide bandgap, high breakdown voltage and current density characteristics. These power supplies are particularly suited for hard-switching topologies like LLC and ZVS, providing higher system efficiency with smaller components for more compact designs at reduced system costs and an energy efficient