Karbid krem\u00edka (SiC) sa r\u00fdchlo presadil ako ide\u00e1lny materi\u00e1l pre aplik\u00e1cie v oblasti monoliticky integrovanej fotoniky v\u010faka kombin\u00e1cii vysok\u00e9ho indexu lomu, \u0161irokej energetickej medzery, n\u00edzkeho koeficientu tepelnej roz\u0165a\u017enosti a vynikaj\u00facej tuhosti. SiC je tie\u017e vynikaj\u00facou vo\u013ebou materi\u00e1lu na v\u00fdrobu zrkadiel v astronomick\u00fdch \u010falekoh\u013eadoch.<\/p>\n
V\u00fdsledky elipsometrick\u00fdch meran\u00ed ukazuj\u00fa, \u017ee priepustnos\u0165 a index lomu vrstiev SiC sa zvy\u0161uj\u00fa s rast\u00facou teplotou nan\u00e1\u0161ania v d\u00f4sledku zmien v hr\u00fabke vrstvy drsnosti.<\/p>\n
Karbid krem\u00edka je z viacer\u00fdch d\u00f4vodov mimoriadne u\u017eito\u010dn\u00fd materi\u00e1l. V\u010faka tvrdosti 9 pod\u013ea Mohsovej stupnice sa vyzna\u010duje neuverite\u013enou odolnos\u0165ou, v\u010faka \u010domu je ide\u00e1lny na v\u00fdrobu br\u00fasnych kot\u00fa\u010dov. Okrem toho je v\u010faka svojim v\u00fdnimo\u010dn\u00fdm lomov\u00fdm vlastnostiam a odolnosti vo\u010di chemick\u00fdm reakci\u00e1m vhodn\u00fd na pou\u017eitie v prostrediach s chemickou agresivitou, zatia\u013e \u010do jeho tepeln\u00e1 vodivos\u0165 mu umo\u017e\u0148uje fungova\u0165 pri vysok\u00fdch teplot\u00e1ch bez straty \u00fa\u010dinnosti.<\/p>\n
V\u010faka svojej vynikaj\u00facej prieh\u013eadnosti v terahertzovej (THz) oblasti v kombin\u00e1cii s n\u00edzkou optickou \u0161\u00edrkou zak\u00e1zan\u00e9ho p\u00e1sma a vysok\u00fdm indexom lomu je erbium atrakt\u00edvnym substr\u00e1tov\u00fdm materi\u00e1lom pre telekomunika\u010dn\u00e9 syst\u00e9my. Jeho vlastnosti s\u00fa porovnate\u013en\u00e9 s nitridom krem\u00edka a zaf\u00edrom; jeho miera absorpcie energie pri THz frekvenci\u00e1ch v\u0161ak prevy\u0161uje oba materi\u00e1ly; navy\u0161e aj \u00fa\u010dinnos\u0165 prenosu prevy\u0161uje v\u00e4\u010d\u0161inu materi\u00e1lov.<\/p>\n
Kry\u0161talick\u00e9 \u0161trukt\u00fary karbidu krem\u00edka sa vyskytuj\u00fa v r\u00f4znych form\u00e1ch, zn\u00e1mych ako polytypy. Ka\u017ed\u00fd polytyp sa sklad\u00e1 z viacer\u00fdch vrstiev usporiadan\u00fdch v tesnom balen\u00ed v jednom smere; ka\u017ed\u00e1 vrstva sa sklad\u00e1 z at\u00f3mov uhl\u00edka a krem\u00edka, ktor\u00e9 s\u00fa viazan\u00e9 na \u0161tyri at\u00f3my opa\u010dn\u00e9ho typu v tetraedrickej v\u00e4zbovej konfigur\u00e1cii, \u010do umo\u017e\u0148uje tesn\u00e9 usporiadanie. V z\u00e1vislosti od poradia stohovania m\u00f4\u017eu kry\u0161t\u00e1lov\u00e9 \u0161trukt\u00fary nadob\u00fada\u0165 r\u00f4zne tvary, ako napr\u00edklad kubick\u00fd, hexagon\u00e1lny alebo romboedrick\u00fd.<\/p>\n
V d\u00f4sledku toho sa hodnoty indexu 2H SiC menia v z\u00e1vislosti od hr\u00fabky a tvaru vrstvy, \u010do vedie k v\u00fdrazn\u00fdm odch\u00fdlkam v hodnot\u00e1ch indexu lomu a extink\u010dn\u00e9ho koeficientu. V oxida\u010dn\u00fdch prostrediach, kde sa karbid krem\u00edka vytv\u00e1ra, sa na jeho povrchu vytv\u00e1ra oxidov\u00e1 vrstva, \u010do je potrebn\u00e9 zoh\u013eadni\u0165 pri meran\u00ed optick\u00fdch parametrov.<\/p>\n
Technika XRR sa d\u00e1 vyu\u017ei\u0165 na z\u00edskanie profilov elektr\u00f3novej hustoty povrchov t\u00fdchto vrstiev, pri\u010dom sa vytvoria profily elektr\u00f3novej hustoty (EDP), ktor\u00e9 verne odr\u00e1\u017eaj\u00fa drsnos\u0165 povrchu a rozhrania vypo\u010d\u00edtan\u00fa z \u00fadajov SE.<\/p>\n
Karbid krem\u00edka je mo\u017en\u00e9 dopova\u0165 ne\u010distotami, \u010d\u00edm sa zmenia jeho elektrick\u00e9 vlastnosti. \u010cist\u00fd SiC funguje ako elektrick\u00fd izol\u00e1tor; pridan\u00edm ur\u010dit\u00fdch ne\u010dist\u00f4t, ako s\u00fa hlin\u00edk, g\u00e1lium alebo b\u00f3r, sa men\u00ed na polovodi\u010d a n\u00e1sledne z neho mo\u017eno vyr\u00e1ba\u0165 zariadenia pre \u0161irok\u00fa \u0161k\u00e1lu pou\u017eit\u00ed.<\/p>\n
Karbid krem\u00edka (SiC) je elektrick\u00fd polovodi\u010dov\u00fd materi\u00e1l s \u0161irokou \u0161\u00edrkou zak\u00e1zan\u00e9ho p\u00e1sma a n\u00edzkym termooptick\u00fdm koeficientom, v\u010faka \u010domu je vhodn\u00fdm kandid\u00e1tom pre monoliticky integrovan\u00fa fotoniku. Okrem toho je SiC v\u010faka svojej vysokej odolnosti vo\u010di \u017eiareniu a Youngovmu modulu vhodn\u00fd aj na pou\u017eitie v MEMS tlakov\u00fdch senzoroch. Vzh\u013eadom na ich zlo\u017eit\u00fa chemick\u00fa \u0161trukt\u00faru a zlo\u017eenie je v\u0161ak v\u00fdroba a charakteriz\u00e1cia vrstiev a-Si1-xCx n\u00e1ro\u010dn\u00e1. Cie\u013eom tejto \u0161t\u00fadie je presk\u00fama\u0165 optick\u00e9 aj pasiva\u010dn\u00e9 vlastnosti vrstiev SiC:H pripraven\u00fdch pomocou technol\u00f3gie reakt\u00edvneho magnetr\u00f3nov\u00e9ho naparovania pre pou\u017eitie v sol\u00e1rnych \u010dl\u00e1nkoch z kry\u0161talick\u00e9ho krem\u00edka (c-Si). Tieto vrstvy boli nanesen\u00e9 na sklen\u00e9 substr\u00e1ty a testovan\u00e9 pomocou r\u00f6ntgenovej reflektometrie a UV-vidite\u013enej spektroskopie, \u010do viedlo k meraniam s vysokou priepustnos\u0165ou v spektre od vidite\u013en\u00e9ho \u017eiarenia a\u017e po bl\u00edzke infra\u010derven\u00e9 \u017eiarenie s extink\u010dn\u00fdm koeficientom ni\u017e\u0161\u00edm ako 0,009 pri 630 nm; hr\u00fabka, hustota a drsnos\u0165 zostali pri zv\u00fd\u0161en\u00fdch teplot\u00e1ch kon\u0161tantn\u00e9.<\/p>\n
SiC vrstvy nanesen\u00e9 met\u00f3dou DIBSD vykazuj\u00fa amorfn\u00e9 vlastnosti, ktor\u00e9 br\u00e1nia tvorbe hust\u00fdch vrstiev, \u010d\u00edm obmedzuj\u00fa kol\u00edsanie ich optick\u00fdch vlastnost\u00ed a zni\u017euj\u00fa ich variabilitu s rast\u00facou hr\u00fabkou (pozri obr. 9, kde je zn\u00e1zornen\u00fd trend rastu SE a XRR s rast\u00facou hr\u00fabkou), \u010do sa prejavuje v zmen\u00e1ch ich optick\u00fdch vlastnost\u00ed pri zmene pomeru C:Si (obr. 9(b) a 9(c)).<\/p>\n
SiC vykazuje koeficient extinkcie aj energetick\u00e9 straty v d\u00f4sledku dlh\u00e9ho \u010dasu rozptylu elektr\u00f3nov a \u0161irokej elektronickej \u0161\u00edrky zak\u00e1zan\u00e9ho p\u00e1sma, \u010do vedie k ni\u017e\u0161\u00edm optick\u00fdm strat\u00e1m v porovnan\u00ed s jeho kry\u0161talick\u00fdmi ekvivalentmi. Bohu\u017eia\u013e, jeho amorfn\u00e1 povaha br\u00e1ni jeho pou\u017eitiu v aplik\u00e1ci\u00e1ch MEMS alebo v oblasti ladite\u013enej optiky.<\/p>\n
A-SiC sa vyskytuje v dvoch polymorfn\u00fdch form\u00e1ch: alfa a beta. Ka\u017ed\u00e1 forma m\u00e1 svoje \u0161pecifick\u00e9 kry\u0161t\u00e1lov\u00e9 \u0161trukt\u00fary a body topenia: alfa m\u00e1 hexagon\u00e1lnu kry\u0161t\u00e1lov\u00fa \u0161trukt\u00faru podobn\u00fa wurtzitu, zatia\u013e \u010do beta formy maj\u00fa \u0161trukt\u00faru zinkovej blendy podobn\u00fa diamantu. Obe formy sa \u0161iroko vyu\u017e\u00edvaj\u00fa v polovodi\u010dov\u00fdch elektronick\u00fdch zariadeniach, pri\u010dom v\u00e4\u010d\u0161ina komer\u010dne dostupn\u00e9ho karbidu krem\u00edka je v alfa forme; okrem toho je hlavnou zlo\u017ekou \u0161perkov z moissanitu, vyroben\u00fdch zo syntetick\u00fdch rub\u00ednov.<\/p>\n
Karbid krem\u00edka je atrakt\u00edvny polovodi\u010d so \u0161irokou energetickou medzerou a vynikaj\u00facimi optick\u00fdmi vlastnos\u0165ami. Konkr\u00e9tne v\u010faka vysok\u00e9mu indexu lomu, n\u00edzkej extink\u010dnej kon\u0161tante a mal\u00e9mu koeficientu tepelnej roz\u0165a\u017enosti je vhodn\u00fd pre fotonick\u00e9 aplik\u00e1cie. Okrem toho je jeho v\u00fdroba jednoduch\u00e1 a v\u010faka svojim elektrick\u00fdm vlastnostiam je tento materi\u00e1l v porovnan\u00ed s tradi\u010dn\u00fdmi materi\u00e1lmi ve\u013emi atrakt\u00edvny. V\u010faka n\u00edzkym n\u00e1kladom a \u0161irok\u00e9mu spektru uplatnen\u00ed v porovnan\u00ed s konven\u010dn\u00fdmi materi\u00e1lmi sa karbid krem\u00edka jav\u00ed ako atrakt\u00edvna vo\u013eba alternat\u00edvneho materi\u00e1lu.<\/p>\n
Optick\u00e9 vlastnosti karbidu krem\u00edka je mo\u017en\u00e9 hodnoti\u0165 pomocou techn\u00edk rozptylu r\u00f6ntgenov\u00e9ho \u017eiarenia a Ramanovej spektroskopie, ktor\u00e9 poskytuj\u00fa neinvaz\u00edvne sp\u00f4soby sk\u00famania jeho \u0161trukt\u00fary a zlo\u017eenia v polykry\u0161talickej (kry\u0161talickej) forme karbidu krem\u00edka. Na rozdiel od difrak\u010dn\u00fdch techn\u00edk, ktor\u00e9 pri sk\u00faman\u00ed vzoriek klad\u00fa obmedzenia na ve\u013ekos\u0165, tieto met\u00f3dy umo\u017e\u0148uj\u00fa anal\u00fdzu nano\u010dast\u00edc ako s\u00fa\u010das\u0165 pr\u00e1\u0161kov\u00fdch vzoriek, ktor\u00e9 n\u00e1sledne tvoria vzorky vhodn\u00e9 pre r\u00f4zne experiment\u00e1lne techniky.<\/p>\n
Jedn\u00fdm zo sp\u00f4sobov v\u00fdroby vzoriek karbidu krem\u00edka 3C je rozpra\u0161ovanie organosil\u00e1nov pri vysok\u00fdch tlakoch a n\u00e1sledn\u00e9 sk\u00famanie \u0161truktur\u00e1lnych vlastnost\u00ed ich mikro\u010dast\u00edc pomocou r\u00f6ntgenovej difrak\u010dnej anal\u00fdzy, pri\u010dom Ramanova spektroskopia m\u00f4\u017ee odhali\u0165 zlo\u017eenie a usporiadanie at\u00f3mov; ich Ramanovo spektrum uk\u00e1\u017ee, ku ktor\u00e9mu polytypu patria, a to prostredn\u00edctvom vrcholov s\u00favisiacich s prie\u010dnymi optick\u00fdmi (TO) a pozd\u013a\u017enymi optick\u00fdmi (LO) fon\u00f3nmi v Brillouinov\u00fdch z\u00f3nach, ktor\u00e9 zodpovedaj\u00fa prie\u010dnym optick\u00fdm a pozd\u013a\u017enym optick\u00fdm (TO\/LO) fon\u00f3nom v Brillouinov\u00fdch z\u00f3nach, \u010d\u00edm sa odhal\u00ed ich zlo\u017eenie a usporiadanie zlo\u017eiek.<\/p>\n
Tieto optick\u00e9 vlastnosti karbidu krem\u00edka vo ve\u013ekej miere z\u00e1visia od jeho polytypu a dopovania; ich sk\u00famanie je preto k\u013e\u00fa\u010dov\u00e9 pre pochopenie fyzik\u00e1lnych vlastnost\u00ed tohto materi\u00e1lu. Cenn\u00e9 inform\u00e1cie m\u00f4\u017eu poskytn\u00fa\u0165 r\u00f6ntgenov\u00e9 rozptylovanie, Ramanova spektroskopia aj elipsometria.<\/p>\n
Na obr\u00e1zku 1 s\u00fa zn\u00e1zornen\u00e9 elipsometrick\u00e9 spektr\u00e1 polytypov SiC-1, SiC-2 a SiC-3, ako to ilustruje elipsometrick\u00e1 aproxim\u00e1cia ich spektier z\u00edskan\u00fdch met\u00f3dou TL, pri\u010dom re\u00e1lne (e1) a imagin\u00e1rne (e2) \u010dasti ich dielektrick\u00fdch funkci\u00ed boli z\u00edskan\u00e9 pomocou porovn\u00e1vania dielektrick\u00fdch funkci\u00ed s hodnotami vlnov\u00fdch d\u013a\u017eok pre ka\u017ed\u00fa vlnov\u00fa d\u013a\u017eku zvl\u00e1\u0161\u0165 \u2013 tieto aproximovan\u00e9 hodnoty s\u00fa na obr\u00e1zku 1 zn\u00e1zornen\u00e9 kruhmi a \u010diarami.<\/p>\n
Ellipsometrick\u00e9 merania ukazuj\u00fa, \u017ee dvojlom SiC pod \u0161\u00edrkou zak\u00e1zan\u00e9ho p\u00e1sma je ove\u013ea ni\u017e\u0161\u00ed ako v pr\u00edpade krem\u00edka, a to kv\u00f4li tomu, \u017ee polytypizmus m\u00e1 siln\u00fd vplyv na mimoriadnu zlo\u017eku dielektrickej funkcie, zatia\u013e \u010do vplyv na be\u017en\u00fa zlo\u017eku zost\u00e1va slab\u0161\u00ed. V\u00fdsledky priepustnosti polarizovan\u00e9ho svetla t\u00fato skuto\u010dnos\u0165 \u010falej ilustruj\u00fa na obr\u00e1zku 2. Absorpcia z\u00e1vis\u00ed tie\u017e od polytypu, ako dokazuj\u00fa tu uveden\u00e9 v\u00fdsledky absorpcie nad \u0161\u00edrkou zak\u00e1zan\u00e9ho p\u00e1sma (pozri obr\u00e1zok 2).<\/p>\n
Karbid krem\u00edka (SiC) je tvrd\u00e1 chemick\u00e1 zl\u00fa\u010denina pozost\u00e1vaj\u00faca z krem\u00edka a uhl\u00edka. SiC, ktor\u00fd bol po prv\u00fdkr\u00e1t synteticky vyroben\u00fd na konci 19. storo\u010dia, sa odvtedy stal neocenite\u013en\u00fdm materi\u00e1lom pre aplik\u00e1cie vy\u017eaduj\u00face vysok\u00fa odolnos\u0165, ako s\u00fa napr\u00edklad br\u00fasne materi\u00e1ly. Okrem toho v\u00fdrobcovia nepriestreln\u00fdch viest vyu\u017e\u00edvaj\u00fa keramick\u00e9 platne z SiC ako nepriestreln\u00e9 platne. Pr\u00e1\u0161ok alebo kry\u0161t\u00e1ly SiC sa daj\u00fa tie\u017e sp\u00e1ja\u0165 do keramick\u00fdch materi\u00e1lov pou\u017e\u00edvan\u00fdch v br\u00fasnych prostriedkoch, priemyseln\u00fdch peciach a ako diely odoln\u00e9 proti opotrebeniu v \u010derpadl\u00e1ch a raketov\u00fdch motoroch. Okrem toho sl\u00fa\u017ei SiC aj ako z\u00e1klad pre vysokonap\u00e4\u0165ov\u00e9 v\u00fdkonov\u00e9 polovodi\u010dov\u00e9 zariadenia.<\/p>\n
Karbid krem\u00edka sa od ostatn\u00fdch materi\u00e1lov odli\u0161uje siln\u00fdmi v\u00e4zbami medzi at\u00f3mami Si a C, v\u010faka \u010domu m\u00e1 jedine\u010dn\u00e9 fyzik\u00e1lne a chemick\u00e9 vlastnosti. Vyzna\u010duje sa mimoriadne vysokou tvrdos\u0165ou, vynikaj\u00facou chemickou odolnos\u0165ou, n\u00edzkou mierou tepelnej roz\u0165a\u017enosti a pozoruhodnou elektrickou vodivos\u0165ou, ktor\u00e1 vypl\u00fdva z prekr\u00fdvania sa jeho valen\u010dn\u00e9ho a vodiv\u00e9ho p\u00e1sma s p\u00e1smami at\u00f3mov uhl\u00edka, \u010do umo\u017e\u0148uje elektr\u00f3nom \u013eahko sa medzi nimi pohybova\u0165.<\/p>\n
Dopovanie karbidu krem\u00edka r\u00f4znymi pr\u00edmesami mu umo\u017e\u0148uje vykazova\u0165 r\u00f4zne elektronick\u00e9 vlastnosti. Dopovanie hlin\u00edkom vytv\u00e1ra polovodi\u010d typu p, zatia\u013e \u010do dopovanie dus\u00edkom alebo fosforom vedie k vzniku polovodi\u010da typu n; pri riaden\u00ed jeho elektrick\u00fdch vlastnost\u00ed zohr\u00e1vaj\u00fa k\u013e\u00fa\u010dov\u00fa \u00falohu nielen koncentr\u00e1cia, ale aj priestorov\u00e9 rozlo\u017eenie dopantov. Spolo\u010dnos\u0165 EAG Laboratories pon\u00faka komplexn\u00e9 analytick\u00e9 slu\u017eby pre karbid krem\u00edka, vr\u00e1tane techn\u00edk anal\u00fdzy objemov\u00fdch vzoriek, ako aj slu\u017eieb priestorovo rozl\u00ed\u0161enej anal\u00fdzy.<\/p>\n
SiC m\u00e1 vy\u0161\u0161ie prierazov\u00e9 nap\u00e4tie ako \u0161tandardn\u00e9 polovodi\u010de na b\u00e1ze krem\u00edka alebo nitridu g\u00e1lia, \u010do z neho rob\u00ed ide\u00e1lny materi\u00e1l pre v\u00fdkonov\u00e9 polovodi\u010de. V\u010faka \u0161irokej \u0161\u00edrke zak\u00e1zan\u00e9ho p\u00e1sma a ve\u013ekej tolerancii nap\u00e4tia dok\u00e1\u017ee SiC odol\u00e1va\u0165 vysok\u00fdm nap\u00e4tiam bez tvorby nadmern\u00e9ho tepla alebo zv\u00fd\u0161enia odporu \u2013 \u010do IGBT a bipol\u00e1rne tranzistory nedok\u00e1\u017eu spo\u013eahlivo. Okrem toho pon\u00faka SiC v\u00fdnimo\u010dn\u00fa odolnos\u0165 proti kor\u00f3zii a oxid\u00e1cii, v\u010faka \u010domu je vhodn\u00fd pre extr\u00e9mne prostredia a n\u00e1ro\u010dn\u00e9 prev\u00e1dzkov\u00e9 podmienky.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon Carbide (SiC) has rapidly emerged as an ideal material for monolithically integrated photonics applications, due to its combination of high refractive index, wide bandgap, low thermal expansion coefficient, and excellent rigidity properties. SiC is also an excellent material choice for making mirrors in astronomical telescopes. Ellipsometric results illustrate that transmittance and refractive index of […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-521","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/521","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/comments?post=521"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/521\/revisions"}],"predecessor-version":[{"id":522,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/521\/revisions\/522"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/media?parent=521"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/categories?post=521"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/tags?post=521"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}