Karbid krem\u00edka (SiC) je inovat\u00edvny nov\u00fd materi\u00e1l pre v\u00fdkonov\u00e9 aplik\u00e1cie, ktor\u00fd s\u013eubuje zv\u00fd\u0161enie \u00fa\u010dinnosti syst\u00e9mu pri s\u00fa\u010dasnom zn\u00ed\u017een\u00ed jeho rozmerov, hmotnosti a ve\u013ekosti. V\u010faka trojn\u00e1sobne vy\u0161\u0161ej tepelnej vodivosti v porovnan\u00ed s krem\u00edkom a ni\u017e\u0161\u00edm sp\u00ednac\u00edm strat\u00e1m umo\u017e\u0148uje dosahova\u0165 vy\u0161\u0161ie prev\u00e1dzkov\u00e9 teploty a v\u00e4\u010d\u0161ie nap\u00e4tia.<\/p>\n
Moduly SiC sa dod\u00e1vaj\u00fa vo verzi\u00e1ch typu \u201e2 v 1\u201c, ktor\u00e9 zjednodu\u0161uj\u00fa konfigur\u00e1ciu obvodov s polomostom, v\u010faka \u010domu s\u00fa ide\u00e1lne pre trak\u010dn\u00e9 meni\u010de v hybridn\u00fdch (HEV) a elektrick\u00fdch (EV) vozidl\u00e1ch alebo pre ak\u00e9ko\u013evek aplik\u00e1cie s dlh\u00fdmi \u00fasekmi maxim\u00e1lneho odberu pr\u00fadu.<\/p>\n
V\u00fdkonov\u00e9 prvky z karbidu krem\u00edka (SiC) predstavuj\u00fa jeden z najlep\u0161\u00edch sp\u00f4sobov, ako minimalizova\u0165 syst\u00e9mov\u00e9 straty vo vysokov\u00fdkonn\u00fdch aplik\u00e1ci\u00e1ch. Ich \u0161irok\u00e1 energetick\u00e1 medzera umo\u017e\u0148uje vy\u0161\u0161ie sp\u00ednacie frekvencie a nap\u00e4tia, \u010do vedie k zv\u00fd\u0161eniu \u00fa\u010dinnosti a z\u00e1rove\u0148 k zmen\u0161eniu rozmerov pas\u00edvnych komponentov. SiC sa vyzna\u010duje aj spo\u013eahlivej\u0161ou prev\u00e1dzkou v n\u00e1ro\u010dn\u00fdch prostrediach, ke\u010f\u017ee m\u00e1 trojn\u00e1sobne vy\u0161\u0161iu tepeln\u00fa vodivos\u0165 ako krem\u00edk.<\/p>\n
Diskr\u00e9tne v\u00fdkonov\u00e9 prvky na b\u00e1ze SiC sa daj\u00fa vyu\u017ei\u0165 v \u0161irokej \u0161k\u00e1le priemyseln\u00fdch aplik\u00e1ci\u00ed, av\u0161ak v niektor\u00fdch kritick\u00fdch syst\u00e9moch, ako s\u00fa zdroje nepretr\u017eit\u00e9ho nap\u00e1jania a nab\u00edja\u010dky bat\u00e9ri\u00ed, s\u00fa niekedy potrebn\u00e9 vy\u0161\u0161ie menovit\u00e9 pr\u00fady. Spolo\u010dnos\u0165 Mitsubishi Electric uviedla na trh v\u00fdkonov\u00e9 moduly 2. gener\u00e1cie s nap\u00e4t\u00edm 1200 V, ktor\u00e9 v praktickom a jednoducho pou\u017eite\u013enom balen\u00ed prin\u00e1\u0161aj\u00fa v\u00fdhody technol\u00f3gie zalo\u017eenej v\u00fdlu\u010dne na SiC do aplik\u00e1ci\u00ed s vy\u0161\u0161\u00edmi po\u017eiadavkami na pr\u00fad, ktor\u00e9 presahuj\u00fa mo\u017enosti diskr\u00e9tnych zariaden\u00ed.<\/p>\n
Tieto moduly vyu\u017e\u00edvaj\u00fa SiC MOSFETy s polomostovou kon\u0161trukciou a s\u00fa vhodn\u00e9 pre r\u00f4zne topol\u00f3gie meni\u010dov, ako s\u00fa meni\u010de DC\/DC, obojsmern\u00e9 meni\u010de a meni\u010de AC\/AC. V porovnan\u00ed s be\u017en\u00fdmi krem\u00edkov\u00fdmi zariadeniami dok\u00e1\u017eu tieto moduly zn\u00ed\u017ei\u0165 sp\u00ednacie straty a\u017e o 70%, \u010d\u00edm prispievaj\u00fa k \u00faspore energie.<\/p>\n
Tieto moduly s\u00fa skon\u0161truovan\u00e9 s oh\u013eadom na vysok\u00fa spo\u013eahlivos\u0165, aby sp\u013a\u0148ali automobilov\u00e9 a priemyseln\u00e9 normy kvality, vr\u00e1tane testovania vypa\u013eovania hradiel na \u00farovni \u010dipov a z\u00e1\u0165a\u017eov\u00e9ho testovania v\u00fdvodu met\u00f3dou HTRB s cie\u013eom zn\u00ed\u017ei\u0165 mieru zlyhania sp\u00f4soben\u00fa vonkaj\u0161\u00edmi vplyvmi; v\u010faka parametrom kr\u00e1tkeho skratu s\u00fa vhodn\u00e9 pre aplik\u00e1cie kritick\u00e9 z h\u013eadiska bezpe\u010dnosti; ich robustn\u00e1 kon\u0161trukcia umo\u017e\u0148uje prev\u00e1dzku a\u017e do 230 \u00b0C s vysok\u00fdmi prierazov\u00fdmi nap\u00e4tiami a r\u00fdchlymi dobami zotavenia, \u010do pom\u00e1ha zmierni\u0165 rizik\u00e1, ako s\u00fa lav\u00ednov\u00e9 efekty alebo priechodn\u00e9 zlyhania.<\/p>\n
SiC je ide\u00e1lny materi\u00e1l pre pohonn\u00e9 syst\u00e9my motorov, ke\u010f\u017ee je schopn\u00fd odol\u00e1va\u0165 vy\u0161\u0161\u00edm teplot\u00e1m ako tradi\u010dn\u00e9 krem\u00edkov\u00e9 zariadenia a z\u00e1rove\u0148 zvy\u0161uje hustotu v\u00fdkonu a v priebehu \u010dasu zlep\u0161uje v\u00fdkonnos\u0165. Okrem toho odolnos\u0165 SiC vo\u010di tepelnej degrad\u00e1cii znamen\u00e1 vy\u0161\u0161iu \u00fa\u010dinnos\u0165 aj po\u010das dlh\u00e9ho \u010dasov\u00e9ho obdobia.<\/p>\n
V\u00fdkonov\u00fd polovodi\u010dov\u00fd modul spolo\u010dnosti Mitsubishi Electric s nap\u00e4t\u00edm 6,5 kV, vyroben\u00fd v\u00fdlu\u010dne z SiC, dosiahol svetovo najvy\u0161\u0161iu \u00farove\u0148 hustoty v\u00fdkonu. To by mohlo umo\u017eni\u0165 v\u00fdvoj men\u0161\u00edch a energeticky \u00faspornej\u0161\u00edch zariaden\u00ed pre trak\u010dn\u00e9 syst\u00e9my \u017eelezni\u010dn\u00fdch voz\u0148ov alebo pre siete prenosu a distrib\u00facie elektrickej energie; navy\u0161e je vybaven\u00fd decentralizovan\u00fdm riaden\u00edm, ktor\u00e9 umo\u017e\u0148uje kombinova\u0165 viacero modulov do jedn\u00e9ho v\u00e4\u010d\u0161ieho v\u00fdkonov\u00e9ho modulu, \u010d\u00edm sa zjednodu\u0161uje n\u00e1vrh syst\u00e9mu.<\/p>\n
V\u00fdkonov\u00e9 polovodi\u010de z karbidu krem\u00edka (SiC) sa te\u0161ia \u010doraz v\u00e4\u010d\u0161ej ob\u013eube v\u010faka svojim \u00fasporn\u00fdm vlastnostiam v zariadeniach v\u00fdkonovej elektroniky. Zariadenia na b\u00e1ze SiC s\u00fa ove\u013ea energeticky \u00faspornej\u0161ie ako ich krem\u00edkov\u00e9 ekvivalenty v\u010faka \u0161ir\u0161ej \u0161\u00edrke zak\u00e1zan\u00e9ho p\u00e1sma, v\u010faka \u010domu je potrebn\u00e9 menej energie na presun elektr\u00f3nov z valen\u010dn\u00e9ho p\u00e1sma do vodiv\u00e9ho p\u00e1sma, a z\u00e1rove\u0148 pracuj\u00fa pri vy\u0161\u0161\u00edch teplot\u00e1ch a nap\u00e4tiach so zn\u00ed\u017een\u00fdmi sp\u00ednac\u00edmi stratami.<\/p>\n
V\u00fdkonov\u00e9 moduly na b\u00e1ze SiC pon\u00fakaj\u00fa mnoho v\u00fdhod, v\u010faka ktor\u00fdm s\u00fa ide\u00e1lnym rie\u0161en\u00edm pre aplik\u00e1cie vy\u017eaduj\u00face vy\u0161\u0161iu \u00fa\u010dinnos\u0165, r\u00fdchlej\u0161ie sp\u00ednacie r\u00fdchlosti a zv\u00fd\u0161en\u00fa spo\u013eahlivos\u0165, ako s\u00fa napr\u00edklad meni\u010de, nab\u00edja\u010dky elektrick\u00fdch vozidiel, sol\u00e1rne meni\u010de a pohonn\u00e9 jednotky motorov. Bohu\u017eia\u013e, ich vysok\u00e1 prev\u00e1dzkov\u00e1 teplota m\u00f4\u017ee vies\u0165 k zv\u00fd\u0161en\u00e9mu nam\u00e1haniu sp\u00e1jky medzi \u010dipom a substr\u00e1tom; v priebehu \u010dasu by toto opakovan\u00e9 nam\u00e1hanie mohlo sp\u00f4sobi\u0165 jej po\u0161kodenie a v\u00fdrazne skr\u00e1ti\u0165 ich \u017eivotnos\u0165.<\/p>\n
Spolo\u010dnos\u0165 Vincotech pri\u0161la s inovat\u00edvnym rie\u0161en\u00edm, ktor\u00e9 v\u00fdrazne zvy\u0161uje odolnos\u0165 zariaden\u00ed na b\u00e1ze SiC vo\u010di opakovan\u00e9mu zap\u00ednaniu a vyp\u00ednaniu, ako s\u00fa napr\u00edklad zariadenia vyr\u00e1ban\u00e9 samotnou spolo\u010dnos\u0165ou Vincotech. V\u010faka pridaniu \u0161peci\u00e1lneho sp\u00e1jkovan\u00e9ho spoja medzi \u010dipom a substr\u00e1tom je teraz mo\u017en\u00e9 testova\u0165 moduly pri vy\u0161\u0161\u00edch teplot\u00e1ch a s n\u00e1ro\u010dnej\u0161\u00edmi prev\u00e1dzkov\u00fdmi profilmi bez toho, aby do\u0161lo k zn\u00ed\u017eeniu v\u00fdkonu alebo spo\u013eahlivosti.<\/p>\n
Platforma v\u00fdkonov\u00fdch modulov SiC od tejto spolo\u010dnosti pozost\u00e1va z modulov s nap\u00e4t\u00edm 3300 V, ktor\u00e9 s\u00fa vybaven\u00e9 polomostov\u00fdmi SiC MOSFET-mi s integrovan\u00fdmi ovl\u00e1da\u010dmi hradiel a merac\u00edmi obvodmi, \u013eahk\u00fdmi z\u00e1klad\u0148ami z AlSiC zabezpe\u010duj\u00facimi mechanick\u00fa stabilitu, schopnos\u0165ou nepretr\u017eitej prev\u00e1dzky pri teplote spojenia 175 \u00b0C a substr\u00e1tom z nitridu krem\u00edka s vysokou tepelnou vodivos\u0165ou, \u010d\u00edm poskytuj\u00fa vynikaj\u00faci elektrick\u00fd v\u00fdkon v n\u00e1ro\u010dn\u00fdch podmienkach.<\/p>\n
Tieto nov\u00e9 moduly s\u00fa dod\u00e1van\u00e9 v atrakt\u00edvnom puzdre s rozmermi 10 mm \u00d7 5 mm, v\u010faka \u010domu s\u00fa vhodn\u00e9 pre aplik\u00e1cie s obmedzen\u00fdm priestorom, ako je automobilov\u00fd a leteck\u00fd priemysel, a v\u010faka pou\u017eitej technol\u00f3gii zos\u00faladenia a balenia sa m\u00f4\u017eu \u013eahko sta\u0165 s\u00fa\u010das\u0165ou integrovan\u00e9ho syst\u00e9mu.<\/p>\n
Spolo\u010dnos\u0165 Imperialx v s\u00fa\u010dasnosti vyu\u017e\u00edva tieto nov\u00e9 moduly v r\u00f4znych prototypoch meni\u010dov nap\u00e4tia s cie\u013eom demon\u0161trova\u0165 ich schopnos\u0165 zabezpe\u010di\u0165 r\u00fdchlej\u0161ie sp\u00ednanie, vy\u0161\u0161iu \u00fa\u010dinnos\u0165 a zn\u00ed\u017eenie celkov\u00fdch n\u00e1kladov syst\u00e9mu v aplik\u00e1ci\u00e1ch na konverziu energie. S\u00fa vybaven\u00e9 nastavite\u013en\u00fdmi ochrann\u00fdmi mechanizmami na ochranu pred nebezpe\u010dn\u00fdmi situ\u00e1ciami, v\u010faka \u010domu predstavuj\u00fa vynikaj\u00face rie\u0161enie pre technick\u00e9 aplik\u00e1cie, ktor\u00e9 vy\u017eaduj\u00fa r\u00fdchlu implement\u00e1ciu meni\u010dov v men\u0161om meradle, ako napr\u00edklad vo vzdel\u00e1van\u00ed alebo vo v\u00fdskume.<\/p>\n
Krem\u00edk je naj\u010dastej\u0161ie pou\u017e\u00edvan\u00fdm materi\u00e1lom pre v\u00fdkonov\u00e9 polovodi\u010de, av\u0161ak in\u00e9 materi\u00e1ly s vynikaj\u00facimi vlastnos\u0165ami, ako napr\u00edklad nitrid g\u00e1lia a karbid krem\u00edka (SiC), pon\u00fakaj\u00fa vy\u0161\u0161iu \u00fa\u010dinnos\u0165 pri vy\u0161\u0161\u00edch teplot\u00e1ch a nap\u00e4tiach, \u010do umo\u017e\u0148uje dosiahnu\u0165 v\u00e4\u010d\u0161iu v\u00fdkonov\u00fa kapacitu na men\u0161om priestore so zn\u00ed\u017een\u00fdmi po\u017eiadavkami na chladenie v energeticky \u00fasporn\u00fdch syst\u00e9moch s integrovan\u00fdm v\u00fdkonom. Okrem toho doch\u00e1dza po\u010das konverzie k men\u0161\u00edm tepeln\u00fdm strat\u00e1m, \u010d\u00edm sa zni\u017euj\u00fa po\u017eiadavky na chladenie a z\u00e1rove\u0148 sa celkov\u00e1 energetick\u00e1 \u00fa\u010dinnos\u0165 v\u00fdrazne zvy\u0161uje.<\/p>\n
SiC pon\u00faka 10-n\u00e1sobne vy\u0161\u0161iu dielektrick\u00fa pevnos\u0165 ako krem\u00edk, \u010do umo\u017e\u0148uje zariadeniam pracova\u0165 pri vy\u0161\u0161\u00edch nap\u00e4tiach bez toho, aby do\u0161lo k ich po\u0161kodeniu alebo k nadmern\u00e9mu zahrievaniu \u2013 je to ide\u00e1lne pre aplik\u00e1cie v nab\u00edjacej infra\u0161trukt\u00fare a inteligentn\u00fdch sie\u0165ach, ktor\u00e9 vy\u017eaduj\u00fa vysok\u00e9 nap\u00e4\u0165ov\u00e9 \u00farovne.<\/p>\n
10-kV v\u00fdkonov\u00e9 moduly SiC od spolo\u010dnosti Imperialx sa vyzna\u010duj\u00fa ni\u017e\u0161ou induk\u010dnos\u0165ou komuta\u010dnej slu\u010dky v porovnan\u00ed s tradi\u010dn\u00fdmi krem\u00edkov\u00fdmi MOSFETmi a maj\u00fa n\u00edzke hodnoty Millerovej kapacity, \u010do umo\u017e\u0148uje dosiahnu\u0165 vy\u0161\u0161iu r\u00fdchlos\u0165 sp\u00ednania a zv\u00fd\u0161i\u0165 \u00fa\u010dinnos\u0165 v kon\u0161trukci\u00e1ch. Okrem toho boli tieto moduly \u0161peci\u00e1lne navrhnut\u00e9 tak, aby sa dali \u013eahko zap\u00e1ja\u0165 do paraleln\u00e9ho zapojenia a aby boli kompatibiln\u00e9 so \u0161tandardn\u00fdmi kon\u0161trukciami riadenia br\u00e1ny.<\/p>\n
V\u00fdkonov\u00e9 moduly Imperialx 10 kV SiC pon\u00fakaj\u00fa atrakt\u00edvne rozhranie medzi v\u00fdkonov\u00fdm modulom a syst\u00e9mom, ktor\u00e9 m\u00f4\u017ee zn\u00ed\u017ei\u0165 celkov\u00e9 n\u00e1klady na syst\u00e9m. Okrem toho ich kryt zvy\u0161uje spo\u013eahlivos\u0165 a zni\u017euje straty v\u00fdkonu pri zv\u00fd\u0161en\u00fdch teplot\u00e1ch, \u010d\u00edm prispieva k zn\u00ed\u017eeniu celkov\u00fdch n\u00e1kladov na syst\u00e9m.<\/p>\n
V\u010faka kombin\u00e1cii \u0161tandardn\u00fdch puzdier, sofistikovan\u00fdch technol\u00f3gi\u00ed mont\u00e1\u017ee a najnov\u0161\u00edch \u010dipov SiC, z ktor\u00fdch vznikaj\u00fa v\u00fdkonov\u00e9 moduly SiC plne optimalizovan\u00e9 na vyu\u017eitie v\u0161etk\u00fdch ich v\u00fdhod, je mo\u017en\u00e9 moduly SiC vyu\u017ei\u0165 v \u0161irokej \u0161k\u00e1le aplik\u00e1ci\u00ed, ako s\u00fa nab\u00edjacie stanice pre elektrick\u00e9 vozidl\u00e1, palubn\u00e9 nab\u00edja\u010dky, DC\/DC meni\u010dov, elektrick\u00fdch kompresorov, palivov\u00fdch \u010dl\u00e1nkov, lek\u00e1rskych nap\u00e1jac\u00edch zdrojov a fotovoltaick\u00fdch meni\u010dov.<\/p>\n
V\u00fdkonov\u00e9 moduly ACEPACK DRIVE spolo\u010dnosti Imperialx s\u00fa \u0161peci\u00e1lne navrhnut\u00e9 tak, aby sp\u013a\u0148ali n\u00e1ro\u010dn\u00e9 prev\u00e1dzkov\u00e9 po\u017eiadavky spojen\u00e9 s nab\u00edjan\u00edm a ovl\u00e1dan\u00edm elektrick\u00fdch vozidiel (EV). Ich robustn\u00e1 a z\u00e1rove\u0148 spo\u013eahliv\u00e1 kon\u0161trukcia je odoln\u00e1 vo\u010di vibr\u00e1ci\u00e1m pri preprave aj extr\u00e9mnym teplotn\u00fdm podmienkam v okol\u00ed. Vn\u00fatorn\u00e9 dosky na vyrovn\u00e1vanie po\u013ea a vysokoteplotn\u00e9 rezistory PDIV zabezpe\u010duj\u00fa bezpe\u010dn\u00fa prev\u00e1dzku pri kr\u00e1tkych aj dlh\u00fdch pripojeniach zbern\u00edc \u2013 ide\u00e1lne vlastnosti pre r\u00fdchle prototypovanie vysokov\u00fdkonn\u00fdch meni\u010dov energie, ako aj pre in\u00e9 n\u00e1ro\u010dn\u00e9 v\u00fdskumn\u00e9 aplik\u00e1cie.<\/p>\n
V\u00fdkonov\u00e9 moduly SiC s\u00fa ove\u013ea men\u0161ie, \u013eah\u0161ie a kompaktnej\u0161ie ako ich krem\u00edkov\u00e9 (Si) ekvivalenty, \u010do umo\u017e\u0148uje kon\u0161trukt\u00e9rom vytv\u00e1ra\u0165 syst\u00e9my s ni\u017e\u0161\u00edmi celkov\u00fdmi n\u00e1kladmi na materi\u00e1l (BOM) a mont\u00e1\u017e.<\/p>\n
Karbid krem\u00edka dok\u00e1\u017ee prinies\u0165 maxim\u00e1lny pr\u00ednos, ak je integrovan\u00fd do starostlivo navrhnut\u00e9ho v\u00fdkonov\u00e9ho modulu. Na dosiahnutie maxim\u00e1lneho v\u00fdkonu tak\u00fdchto modulov musia by\u0165 ich komponenty navrhnut\u00e9 tak, aby mali minim\u00e1lny tepeln\u00fd odpor \u2013 to umo\u017e\u0148uje v\u00fdkonov\u00e9mu modulu dosiahnu\u0165 svoj pln\u00fd potenci\u00e1l a z\u00e1rove\u0148 zabr\u00e1ni\u0165 pred\u010dasnej poruche sp\u00f4sobenej elektrotermick\u00fdm starnut\u00edm.<\/p>\n
V\u00fdkonov\u00e9 moduly tvoria z\u00e1klad syst\u00e9mov na premenu elektrickej energie. Vyu\u017e\u00edvaj\u00fa sa v \u0161irokej \u0161k\u00e1le aplik\u00e1ci\u00ed \u2013 od meni\u010dov a nab\u00edjac\u00edch stan\u00edc pre elektrick\u00e9 vozidl\u00e1 cez priemyseln\u00e9 a leteck\u00e9 energetick\u00e9 syst\u00e9my a\u017e po vojensk\u00e9 aplik\u00e1cie. V\u00fdkonov\u00e9 polovodi\u010dov\u00e9 prvky na b\u00e1ze SiC predstavuj\u00fa vynikaj\u00facu vo\u013ebu, preto\u017ee pon\u00fakaj\u00fa vynikaj\u00facu \u00fa\u010dinnos\u0165 a z\u00e1rove\u0148 s\u00fa cenovo dostupn\u00e9, \u013eahk\u00e9 a nen\u00e1ro\u010dn\u00e9 na \u00fadr\u017ebu.<\/p>\n
Zariadenia z karbidu krem\u00edka nielen\u017ee pon\u00fakaj\u00fa vy\u0161\u0161iu \u00fa\u010dinnos\u0165 a ni\u017e\u0161ie n\u00e1klady na zoznam komponentov (BOM), ale m\u00f4\u017eu tie\u017e pracova\u0165 pri vy\u0161\u0161\u00edch sp\u00ednac\u00edch frekvenci\u00e1ch ako ich krem\u00edkov\u00e9 ekvivalenty \u2013 \u010do poskytuje in\u017einierom v\u00e4\u010d\u0161\u00ed priestor na navrhovanie rie\u0161en\u00ed s vy\u0161\u0161ou hustotou v\u00fdkonu, ni\u017e\u0161\u00edmi vodiv\u00fdmi stratami, r\u00fdchlej\u0161ou prechodovou odozvou a v\u00e4\u010d\u0161ou odolnos\u0165ou.<\/p>\n
V\u00fdkonov\u00e9 moduly ACEPACK DRIVE s\u00fa vybaven\u00e9 syst\u00e9mom priameho kvapalinov\u00e9ho chladenia s vysokov\u00fdkonn\u00fdmi MOSFETmi z karbidu krem\u00edka a ovl\u00e1da\u010dmi br\u00e1ny v puzdre IGBT s polovi\u010dnou ve\u013ekos\u0165ou, \u010do u\u013eah\u010duje rozmiestnenie, mont\u00e1\u017e a zaru\u010duje vysok\u00fa spo\u013eahlivos\u0165. In\u017einieri m\u00f4\u017eu t\u00fato v\u00fdhodu vyu\u017ei\u0165 na dosiahnutie vy\u0161\u0161ieho v\u00fdkonu na men\u0161om priestore s v\u00e4\u010d\u0161ou \u013eahkos\u0165ou a z\u00e1rove\u0148 zjednodu\u0161i\u0165 postupy rozmiestnenia a mont\u00e1\u017ee s cie\u013eom zv\u00fd\u0161i\u0165 v\u00fdstupn\u00fd v\u00fdkon.<\/p>\n
V\u00fdkonov\u00fd modul ACEPACK DRIVE sa vyzna\u010duje vynikaj\u00facimi teplotn\u00fdmi vlastnos\u0165ami v\u010faka svojmu tepeln\u00e9mu bloku, ktor\u00fd pom\u00e1ha zn\u00ed\u017ei\u0165 pr\u00fad v prev\u00e1dzkovom stave a z\u00e1tkov\u00fd pr\u00fad o 20% alebo viac, \u010d\u00edm zabezpe\u010duje vy\u0161\u0161iu hustotu v\u00fdkonu, ni\u017e\u0161ie tepeln\u00e9 straty a vy\u0161\u0161iu spo\u013eahlivos\u0165, pri\u010dom sp\u013a\u0148a n\u00e1ro\u010dn\u00e9 po\u017eiadavky na \u017eivotnos\u0165.<\/p>\n
Platforma v\u00fdkonov\u00fdch MOSFETov z karbidu krem\u00edka SEMITOP E1\/E2 zah\u0155\u0148a viacero gener\u00e1ci\u00ed \u010dipov v r\u00f4znych topol\u00f3gi\u00e1ch, ako s\u00fa \u201esixpack\u201c, polomost a H-most; v\u010faka tomu patr\u00ed s\u00e9ria SEMITOP medzi najpokro\u010dilej\u0161ie rie\u0161enia v\u00fdkonov\u00fdch modulov z karbidu krem\u00edka na trhu. Okrem toho patr\u00ed jeden z jej teplotn\u00fdch koeficientov RDS(on) medzi najni\u017e\u0161ie dostupn\u00e9 na trhu, v\u010faka \u010domu t\u00e1to s\u00e9ria patr\u00ed medzi najpokro\u010dilej\u0161ie pon\u00fakan\u00e9 v\u00fdkonov\u00e9 moduly.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide (SiC), is an innovative new material for power applications that promises to increase system efficiency while decreasing system size, weight and form factor. Three times more thermally conductive than silicon and with lower switching losses it enables higher operating temperatures and greater voltages. SiC modules come in 2-in-1 forms that make configuring half-bridge […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-500","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/500","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/comments?post=500"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/500\/revisions"}],"predecessor-version":[{"id":501,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/500\/revisions\/501"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/media?parent=500"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/categories?post=500"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/tags?post=500"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}