Karbid krem\u00edka je jedn\u00fdm z naj\u013eah\u0161\u00edch a najtvrd\u0161\u00edch keramick\u00fdch materi\u00e1lov, ktor\u00fd \u013eahko odol\u00e1va kor\u00f3zii, oderu a opotrebovaniu tren\u00edm. Okrem toho je v\u010faka svojim polovodiv\u00fdm vlastnostiam vhodn\u00fd na vysokonap\u00e4\u0165ov\u00e9 aplik\u00e1cie, ako je v\u00fdkonov\u00e1 elektronika v elektrick\u00fdch vozidl\u00e1ch.<\/p>\n
Vodivos\u0165 SiC mo\u017eno zv\u00fd\u0161i\u0165 dopovan\u00edm dus\u00edkom alebo fosforom pre polovodi\u010de typu n a hlin\u00edkom, b\u00f3rom alebo g\u00e1liom pre polovodi\u010de typu p; okrem toho je to mimoriadne tepelne vodiv\u00fd materi\u00e1l.<\/p>\n
Karbid krem\u00edka (SiC) je chemick\u00e1 zl\u00fa\u010denina so silnou hexagon\u00e1lnou \u0161trukt\u00farou a \u0161irokou p\u00e1smovou medzerou medzi polovodi\u010dmi. V\u010faka tomu je SiC vynikaj\u00facim kandid\u00e1tom na v\u00fdkonov\u00e9 elektronick\u00e9 zariadenia, ktor\u00e9 vy\u017eaduj\u00fa vy\u0161\u0161ie prev\u00e1dzkov\u00e9 teploty, vy\u0161\u0161ie blokovacie nap\u00e4tia, ni\u017e\u0161ie sp\u00ednacie straty ako krem\u00edkov\u00e9 zariadenia a \u0161ir\u0161ie p\u00e1sov\u00e9 medzery, ktor\u00e9 umo\u017e\u0148uj\u00fa ten\u0161ie kon\u0161trukcie zvy\u0161uj\u00face hustotu v\u00fdkonu.<\/p>\n
Karbid krem\u00edka sa m\u00f4\u017ee sta\u0165 elektricky vodiv\u00fdm prostredn\u00edctvom jeho dopovania in\u00fdmi prvkami, \u010do je v polovodi\u010dovom priemysle ob\u013e\u00faben\u00fd postup. Dopovanie zvy\u0161uje vodivos\u0165, teplotn\u00fa odolnos\u0165 a presnos\u0165 opracovania - napr\u00edklad pridan\u00edm dopantu typu n, ako je dus\u00edk alebo fosfor, ktor\u00fd zvy\u0161uje spojitos\u0165 elektr\u00f3nov a dier v kry\u0161t\u00e1lovej \u0161trukt\u00fare, a t\u00fdm aj vodivos\u0165.<\/p>\n
\u010eal\u0161ou met\u00f3dou zvy\u0161ovania vodivosti karbidu krem\u00edka je dopovanie, teda proces prid\u00e1vania pr\u00edmes\u00ed do jeho kry\u0161t\u00e1lovej \u0161trukt\u00fary s cie\u013eom zv\u00fd\u0161i\u0165 vodivos\u0165. Dopovanie m\u00f4\u017ee zmeni\u0165 vlastnosti, ako je p\u00e1sov\u00e1 medzera a tepeln\u00e1 vodivos\u0165. Napr\u00edklad dopovanie pr\u00edmesou typu n zmen\u0161uje ve\u013ekos\u0165 p\u00e1sma, tak\u017ee elektr\u00f3ny m\u00f4\u017eu \u013eah\u0161ie prech\u00e1dza\u0165 cez p\u00e1smo do oblast\u00ed p\u00e1sma zvy\u0161uj\u00facich vodivos\u0165, \u010d\u00edm sa zvy\u0161uje vodivos\u0165.<\/p>\n
P\u00e1smov\u00fa medzeru karbidu krem\u00edka mo\u017eno zn\u00ed\u017ei\u0165 aj zv\u00fd\u0161en\u00edm obsahu uhl\u00edka alebo nahraden\u00edm niektor\u00fdch at\u00f3mov kysl\u00edka vod\u00edkom, preto\u017ee uhl\u00edk m\u00e1 n\u00edzku v\u00e4zbov\u00fa energiu s krem\u00edkom, zatia\u013e \u010do v\u00e4zbov\u00e1 energia medzi krem\u00edkom a kysl\u00edkom je v\u00fdrazne vy\u0161\u0161ia ako medzi at\u00f3mami krem\u00edka a dus\u00edka.<\/p>\n
P\u00e1smov\u00e1 medzera karbidu krem\u00edka je trikr\u00e1t v\u00e4\u010d\u0161ia ako u krem\u00edka, \u010do z neho rob\u00ed vynikaj\u00faci materi\u00e1l pre aplik\u00e1cie v\u00fdkonovej elektroniky. Jeho \u0161irok\u00e1 p\u00e1smov\u00e1 medzera mu umo\u017e\u0148uje odol\u00e1va\u0165 ove\u013ea vy\u0161\u0161\u00edm sp\u00ednac\u00edm nap\u00e4tiam a frekvenci\u00e1m v porovnan\u00ed s krem\u00edkom a tie\u017e odol\u00e1va\u0165 vysok\u00fdm teplot\u00e1m, ktor\u00e9 s\u00fa potrebn\u00e9 v mnoh\u00fdch elektronick\u00fdch zariadeniach.<\/p>\n
Karbid krem\u00edka m\u00e1 extr\u00e9mne vysok\u00fa vn\u00fatorn\u00fa elektrick\u00fa vodivos\u0165, ktor\u00fa mo\u017eno zv\u00fd\u0161i\u0165 dopovan\u00edm dopantmi typu n alebo p. Je to typick\u00fd tvrd\u00fd a krehk\u00fd materi\u00e1l s bezfarebn\u00fdmi odtie\u0148mi. Pr\u00edrodn\u00e9 zdroje SiC s\u00fa obmedzen\u00e9: ob\u010das sa objavuj\u00fa drahokamy moissanitu, ako aj mal\u00e9 mno\u017estv\u00e1 v meteoritoch a lo\u017eisk\u00e1ch korundu; v\u00e4\u010d\u0161ina komer\u010dn\u00fdch zdrojov SiC sa vyr\u00e1ba synteticky.<\/p>\n
Karbid krem\u00edka (SiC) je nepostr\u00e1date\u013en\u00fdm materi\u00e1lom vo v\u00fdkonovej elektronike, optoelektronike a kvantov\u00fdch v\u00fdpo\u010dtoch1. Lokalizovan\u00e9 tepeln\u00e9 toky m\u00f4\u017eu negat\u00edvne ovplyvni\u0165 ich v\u00fdkonnos\u0165 r\u00fdchlym zvy\u0161ovan\u00edm teploty - preto je v elektronick\u00fdch syst\u00e9moch na b\u00e1ze SiC nevyhnutn\u00e1 vysok\u00e1 tepeln\u00e1 vodivos\u0165.<\/p>\n
Karbid krem\u00edka m\u00e1 v\u00fdrazne vy\u0161\u0161iu tepeln\u00fa vodivos\u0165 ako me\u010f, ktor\u00e1 je najroz\u0161\u00edrenej\u0161\u00edm kovom. Mo\u017eno to prip\u00edsa\u0165 siln\u00fdm at\u00f3mov\u00fdm v\u00e4zb\u00e1m a \u0161trukt\u00fare kry\u0161t\u00e1lovej mrie\u017eky SiC. Napriek tejto vynikaj\u00facej tepelnej vodivosti m\u00e1 v\u0161ak v porovnan\u00ed s in\u00fdmi materi\u00e1lmi nezvy\u010dajne n\u00edzku \u0161pecifick\u00fa tepeln\u00fa kapacitu; pribli\u017ene 170 J\/Kg, \u010do je pribli\u017ene polovica v porovnan\u00ed s me\u010fou.<\/p>\n
\u0160t\u00fadie vykonan\u00e9 v minulosti preuk\u00e1zali, \u017ee tepeln\u00e1 vodivos\u0165 karbidu krem\u00edka je v\u00fdrazne ovplyvnen\u00e1 jeho mikro\u0161trukt\u00farou a f\u00e1zov\u00fdm zlo\u017een\u00edm, najm\u00e4 pri ni\u017e\u0161\u00edch teplot\u00e1ch. Stredn\u00e9 vo\u013en\u00e9 dr\u00e1hy fon\u00f3nov v neusporiadanom SiC s\u00fa krat\u0161ie ako v usporiadan\u00fdch f\u00e1zach.<\/p>\n
Ned\u00e1vno sme vykonali rozsiahle anal\u00fdzy frekven\u010dnej z\u00e1vislosti tepelnej vodivosti objemov\u00fdch a tenkovrstvov\u00fdch vzoriek SiC pomocou prechodov\u00fdch termoreflexn\u00fdch meran\u00ed. Pozorovali sme, \u017ee v neusporiadan\u00fdch aj \u010dist\u00fdch vzork\u00e1ch 3C-SiC doch\u00e1dza k poklesu v z\u00e1vislosti od frekvencie - tento trend je obzvl\u00e1\u0161\u0165 siln\u00fd pre fon\u00f3ny s ni\u017e\u0161ou frekvenciou.<\/p>\n
Tento jav mo\u017eno vysvetli\u0165 silnej\u0161\u00edm rozptylom povrchov\u00fdch fon\u00f3nov sp\u00f4soben\u00fdm defektmi b\u00f3ru ako vakanciami, pri\u010dom potla\u010denie tepelnej vodivosti zohr\u00e1va z\u00e1sadn\u00fa \u00falohu pri zlep\u0161ovan\u00ed tepeln\u00e9ho riadenia mikroelektroniky na b\u00e1ze SiC.<\/p>\n
Karbid krem\u00edka, jeden z naj\u013eah\u0161\u00edch a najtvrd\u0161\u00edch keramick\u00fdch materi\u00e1lov, sp\u00e1ja at\u00f3my uhl\u00edka a krem\u00edka do tetra\u00e9drov a vytv\u00e1ra mimoriadne tvrd\u00fd a pru\u017en\u00fd materi\u00e1l, ktor\u00fd odol\u00e1va kor\u00f3zii, oderu, er\u00f3zii a elektrick\u00fdm \u0161okom. V\u010faka vysok\u00e9mu Youngovmu modulu a n\u00edzkej tepelnej roz\u0165a\u017enosti je vynikaj\u00facim kon\u0161truk\u010dn\u00fdm materi\u00e1lom; pou\u017e\u00edva sa pri teplot\u00e1ch do 1 600 \u00b0C bez straty pevnosti alebo tuhosti a bez probl\u00e9mov zn\u00e1\u0161a kyseliny, z\u00e1sady a roztaven\u00e9 soli, preto sa u\u017e dlho pou\u017e\u00edva v mlynoch a expand\u00e9roch chemick\u00fdch z\u00e1vodov - nehovoriac o zrkadl\u00e1ch pre astronomick\u00e9 \u010falekoh\u013eady!<\/p>\n
Elektrick\u00e1 vodivos\u0165 karbidu krem\u00edka sa men\u00ed v z\u00e1vislosti od teploty. Pri ni\u017e\u0161\u00edch teplot\u00e1ch sa spr\u00e1va ako izolant a br\u00e1ni toku elektrickej energie, ale so zvy\u0161uj\u00facou sa teplotou sa za\u010d\u00edna spr\u00e1va\u0165 viac ako polovodi\u010d a umo\u017e\u0148uje \u013eah\u0161\u00ed prechod elektrickej energie; je to sp\u00f4soben\u00e9 \u0161ir\u0161ou energetickou medzerou p\u00e1sma, ktor\u00e1 umo\u017e\u0148uje, aby sa viac elektr\u00f3nov excitovalo a pohybovalo sa v celom materi\u00e1li.<\/p>\n
Dopovanie karbidu krem\u00edka m\u00f4\u017ee pom\u00f4c\u0165 prekona\u0165 jeho izola\u010dn\u00e9 vlastnosti pridan\u00edm ne\u010dist\u00f4t, ktor\u00e9 generuj\u00fa vo\u013en\u00e9 nosi\u010de n\u00e1boja, ako s\u00fa elektr\u00f3ny a diery, \u010d\u00edm sa vytvor\u00ed viac vo\u013en\u00fdch nosi\u010dov n\u00e1boja, ako s\u00fa elektr\u00f3ny a diery, ktor\u00e9 sa vo\u013ene pohybuj\u00fa v jeho kry\u0161t\u00e1lovej \u0161trukt\u00fare. Dopovan\u00edm sa karbid krem\u00edka m\u00f4\u017ee sta\u0165 bu\u010f izolantom, alebo polovodi\u010dom; dopovan\u00edm hlin\u00edkom alebo g\u00e1liom z\u00edska vlastnosti polovodi\u010da typu P, zatia\u013e \u010do pridan\u00edm dus\u00edka alebo fosforu sa vytvoria vlastnosti polovodi\u010da typu N.<\/p>\n
Vynikaj\u00faca energetick\u00e1 medzera v p\u00e1sme karbidu krem\u00edka umo\u017e\u0148uje jeho pou\u017eitie v aplik\u00e1ci\u00e1ch vy\u017eaduj\u00facich vy\u0161\u0161ie nap\u00e4tie, ako s\u00fa vysokonap\u00e4\u0165ov\u00e9 gener\u00e1tory a v\u00fdkonov\u00e9 tranzistory. Karbid krem\u00edka umo\u017e\u0148uje dosahova\u0165 vy\u0161\u0161ie nap\u00e4tia, preto\u017ee jeho energetick\u00e1 medzera v p\u00e1sme prevy\u0161uje in\u00e9 polovodi\u010dov\u00e9 materi\u00e1ly, ako je napr\u00edklad krem\u00edk.<\/p>\n
Za zmienku stoj\u00ed aj to, \u017ee tepeln\u00e1 vodivos\u0165 karbidu krem\u00edka sa men\u00ed v z\u00e1vislosti od jeho hustoty; s rast\u00facou hustotou sa zvy\u0161uje aj jeho tepeln\u00e1 vodivos\u0165 v d\u00f4sledku zv\u00fd\u0161en\u00e9ho pohybu vo\u013en\u00fdch elektr\u00f3nov v jeho \u0161trukt\u00fare, \u010do vedie k v\u00e4\u010d\u0161iemu rozptylu tepla prostredn\u00edctvom fon\u00f3nov\u00fdch vibr\u00e1ci\u00ed.<\/p>\n
Karbid krem\u00edka m\u00e1 prirodzene n\u00edzku tepeln\u00fa a elektrick\u00fa vodivos\u0165; jeho vodivos\u0165 sa v\u0161ak m\u00f4\u017ee zv\u00fd\u0161i\u0165 pridan\u00edm pr\u00edsad, ako s\u00fa uhl\u00edk a b\u00f3r, po\u010das spekania. Uhl\u00edk m\u00f4\u017ee zmeni\u0165 jeho \u0161trukt\u00faru, aby umo\u017enil pohyb v\u00e4\u010d\u0161ieho mno\u017estva vo\u013en\u00fdch elektr\u00f3nov, zatia\u013e \u010do pridanie b\u00f3ru m\u00f4\u017ee zv\u00fd\u0161i\u0165 jeho Seebeckov koeficient, a t\u00fdm zn\u00ed\u017ei\u0165 aktiva\u010dn\u00fa energiu, \u010do vedie k \u010fal\u0161iemu zlep\u0161eniu vodivosti.<\/p>\n
Elektrick\u00e1 vodivos\u0165 karbidu krem\u00edka sa d\u00e1 \u010falej vyu\u017ei\u0165 jeho pou\u017eit\u00edm ako s\u00fa\u010dasti kompozitn\u00fdch \u0161trukt\u00far s kovmi alebo keramikou, najm\u00e4 v reaktoroch jadrovej f\u00fazie, kde sa kon\u0161truk\u010dn\u00e9 komponenty bud\u00fa vyu\u017e\u00edva\u0165 ako pokr\u00fdvky z tekut\u00fdch kovov, ktor\u00e9 vytv\u00e1raj\u00fa magnetick\u00e9 polia na zadr\u017eiavanie plazmy. N\u00edzky elektrick\u00fd a tepeln\u00fd odpor je v t\u00fdchto pr\u00edpadoch nevyhnutn\u00fd na minimaliz\u00e1ciu magnetohydrodynamick\u00fdch \u00fa\u010dinkov sp\u00f4soben\u00fdch pr\u00faden\u00edm tekut\u00e9ho kovu cez kompozitn\u00e9 \u0161trukt\u00fary a okolo nich.<\/p>\n
Karbid krem\u00edka je v\u010faka svojej vodivosti nenahradite\u013en\u00fdm materi\u00e1lom v r\u00f4znych aplik\u00e1ci\u00e1ch, od tradi\u010dn\u00fdch polovodi\u010dov\u00fdch n\u00e1hrad a\u017e po automobilov\u00e9 komponenty a nepriestreln\u00e9 panciere. Napr\u00edklad jeho elektrick\u00e1 vodivos\u0165 mu umo\u017e\u0148uje vyu\u017e\u00edva\u0165 ho na r\u00f4zne \u00fa\u010dely. Chemick\u00e1 stabilita karbidu krem\u00edka ho tie\u017e rob\u00ed mimoriadne odoln\u00fdm - ide\u00e1lnym do prostredia s vysok\u00fdmi teplotami, ako s\u00fa v\u00fdrobn\u00e9 zariadenia na v\u00fdrobu polovodi\u010dov.<\/p>\n
Vodivos\u0165 SiC je dan\u00e1 jeho p\u00e1smovou medzerou. Ide o rozdiel energie potrebnej na prechod elektr\u00f3nov z valen\u010dn\u00e9ho p\u00e1sma do vodivostn\u00e9ho p\u00e1sma alebo z valen\u010dn\u00e9ho p\u00e1sma do vodivostn\u00e9ho p\u00e1sma. Materi\u00e1ly so \u0161irok\u00fdmi p\u00e1sov\u00fdmi medzerami sa pova\u017euj\u00fa za polovodi\u010de, zatia\u013e \u010do \u00fazke sa spr\u00e1vaj\u00fa ako izolanty; \u010dist\u00fd karbid krem\u00edka sa spr\u00e1va ako izolant, ale s ur\u010dit\u00fdmi pr\u00edmesami m\u00f4\u017ee vykazova\u0165 polovodi\u010dov\u00e9 vlastnosti.<\/p>\n
Karbid krem\u00edka mo\u017eno vytvori\u0165 zahriat\u00edm na ve\u013emi vysok\u00e9 teploty za pr\u00edtomnosti uhl\u00edka. Edward C. Acheson bol prv\u00fdm priekopn\u00edkom tejto techniky v roku 1891, ke\u010f nap\u00fa\u0161\u0165al hlinu pr\u00e1\u0161kov\u00fdm koksom, pou\u017e\u00edval elektrick\u00e9 teplo z obl\u00fakovej lampy a elektrick\u00e9 ohrieva\u010de, a\u017e nakoniec vytvoril tvrd\u00fa zelen\u00fa l\u00e1tku s dostato\u010dnou pevnos\u0165ou na po\u0161kriabanie skla, ktor\u00fa nazval karborundum.<\/p>\n
Karbid krem\u00edka sa nach\u00e1dza v pr\u00edrode v hornin\u00e1ch, ako je diorit a moissanit, a vyr\u00e1ba sa synteticky. Materi\u00e1l sa vyzna\u010duje dvoma prim\u00e1rnymi koordina\u010dn\u00fdmi tetra\u00e9drami zlo\u017een\u00fdmi zo \u0161tyroch at\u00f3mov uhl\u00edka a \u0161tyroch at\u00f3mov krem\u00edka viazan\u00fdch do ka\u017ed\u00e9ho tetra\u00e9dra; tieto tetra\u00e9dre sa potom ukladaj\u00fa na seba a vytv\u00e1raj\u00fa polytypy - pri\u010dom polytyp alfa sa \u010dasto vyskytuje s hexagon\u00e1lnou kry\u0161t\u00e1lovou \u0161trukt\u00farou podobnou wurtzitu ako jeho naj\u010dastej\u0161ie sa vyskytuj\u00faci variant.<\/p>\n
Dopovanie karbidu krem\u00edka umo\u017e\u0148uje jeho premenu na polovodi\u010d typu p alebo n pridan\u00edm r\u00f4znych dopantov, ako s\u00fa b\u00f3r a hlin\u00edk; dopanty dus\u00edka a fosforu ho menia na polovodi\u010d typu n.<\/p>\n
Hmotnostn\u00e1 spektrometria so \u017eiariv\u00fdm v\u00fdbojom a r\u00f6ntgenov\u00e1 fluorescen\u010dn\u00e1 spektroskopia s\u00fa dve popul\u00e1rne techniky na anal\u00fdzu karbidu krem\u00edka; presnej\u0161ia anal\u00fdza m\u00f4\u017ee zah\u0155\u0148a\u0165 induk\u010dne viazan\u00fa plazmu - optick\u00fa emisn\u00fa spektrometriu alebo laserov\u00fa abl\u00e1ciu - induk\u010dne viazan\u00fa plazmu - hmotnostn\u00fa spektrometriu na tuh\u00fdch vzork\u00e1ch alebo rozkladan\u00fdch\/vyl\u00fahovan\u00fdch vzork\u00e1ch.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide is one of the lightest and hardest ceramic materials, resisting corrosion, abrasion and frictional wear with ease. Additionally, its semiconducting properties make it suitable for high voltage applications like power electronics on electric vehicles. Conductivity of SiC can be increased through doping with nitrogen or phosphorus for n-type semiconductors and aluminum, boron, or […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-438","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/438","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/comments?post=438"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/438\/revisions"}],"predecessor-version":[{"id":439,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/438\/revisions\/439"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/media?parent=438"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/categories?post=438"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/tags?post=438"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}