Karbid krem\u00edka prin\u00e1\u0161a revol\u00faciu do v\u00fdkonovej elektroniky. Pomaly nahr\u00e1dza tradi\u010dn\u00e9 krem\u00edkov\u00e9 tranzistory a z\u00e1rove\u0148 pon\u00faka v\u00fdrazn\u00e9 zv\u00fd\u0161enie v\u00fdkonu.<\/p>\n
Vzh\u013eadom na fyzik\u00e1lne a elektronick\u00e9 vlastnosti materi\u00e1lu sa in\u017einieri m\u00f4\u017eu zdr\u00e1ha\u0165 prija\u0165 t\u00fato technol\u00f3giu. Bohu\u017eia\u013e, od jej \u00fapln\u00e9ho prijatia ich m\u00f4\u017eu odr\u00e1dza\u0165 nespr\u00e1vne predstavy.<\/p>\n
Karbid krem\u00edka sa vyskytuje v pr\u00edrode ako moissanitov\u00e9 drahokamy a vyr\u00e1ba sa synteticky. Obe formy mo\u017eno upravi\u0165 tak, aby sa spr\u00e1vali ako polovodi\u010de, a to dopovan\u00edm prvkami, ako s\u00fa hlin\u00edk, b\u00f3r, g\u00e1lium a dus\u00edk.<\/p>\n
Karbid krem\u00edka (SiC) je elektronick\u00fd materi\u00e1l, ktor\u00fd sa prirodzene nach\u00e1dza vo ve\u013emi mal\u00fdch mno\u017estv\u00e1ch v meteoritoch, korundov\u00fdch lo\u017eisk\u00e1ch a kimberlitov\u00fdch hornin\u00e1ch, zatia\u013e \u010do v\u00e4\u010d\u0161ina SiC v elektronick\u00fdch zariadeniach poch\u00e1dza zo syntetick\u00fdch zdrojov. SiC predstavuje ekonomick\u00fa alternat\u00edvu k tradi\u010dn\u00fdm krem\u00edkov\u00fdm polovodi\u010dom pri rie\u0161en\u00ed n\u00e1ro\u010dn\u00fdch pr\u00fadov\u00fdch\/nap\u00e4\u0165ov\u00fdch po\u017eiadaviek v tak\u00fdchto n\u00e1ro\u010dn\u00fdch aplik\u00e1ci\u00e1ch.<\/p>\n
SiC tranzistory si z\u00edskali miesto medzi odborn\u00edkmi na v\u00fdkonov\u00fa elektroniku v\u010faka svojmu p\u00f4sobivo vysok\u00e9mu prierazn\u00e9mu nap\u00e4tiu. V\u010faka 10-kr\u00e1t v\u00e4\u010d\u0161iemu kritick\u00e9mu elektrick\u00e9mu po\u013eu ako krem\u00edk umo\u017e\u0148uje SiC zariadeniam fungova\u0165 s v\u00fdrazne zn\u00ed\u017een\u00fdm odporom un\u00e1\u0161anej vrstvy na plochu, \u010do vedie k p\u00f4sobivo vysok\u00fdm v\u00fddr\u017en\u00fdm nap\u00e4tiam a extr\u00e9mne n\u00edzkym hodnot\u00e1m zap\u00ednacieho odporu.<\/p>\n
Topol\u00f3gie s tvrd\u00fdm sp\u00ednan\u00edm, ako je korekcia \u00fa\u010dinn\u00edka totemov\u00fdm p\u00f3lom a synchr\u00f3nny boost, s\u00fa mo\u017en\u00e9 s IGBT, zatia\u013e \u010do ich vy\u0161\u0161ie odpory pri zapnut\u00ed ved\u00fa k zna\u010dnej tvorbe tepla a sp\u00ednac\u00edm strat\u00e1m s IGBT a bipol\u00e1rnymi tranzistormi, \u010do vedie k zna\u010dnej tvorbe tepla a sp\u00ednac\u00edm strat\u00e1m.<\/p>\n
\u0160irok\u00e9 p\u00e1smo SiC umo\u017e\u0148uje pou\u017eitie men\u0161\u00edch vrstiev oxidu hradla, \u010do vedie k ni\u017e\u0161\u00edm parazitn\u00fdm prvkom, a t\u00fdm k ni\u017e\u0161iemu odporu pri zapnut\u00ed a vy\u0161\u0161iemu v\u00fdkonu - v\u00fdhoda, ktor\u00e1 je obzvl\u00e1\u0161\u0165 prospe\u0161n\u00e1 pri vysokor\u00fdchlostn\u00fdch sp\u00ednac\u00edch aplik\u00e1ci\u00e1ch, kde je potrebn\u00e9 podporova\u0165 vysok\u00e9 frekvencie bez vytv\u00e1rania nadmern\u00e9ho tepla.<\/p>\n
SiC je dobre zn\u00e1my svoj\u00edm vynikaj\u00facim v\u00fdkonom pri vysok\u00fdch r\u00fdchlostiach, ale jeho tepeln\u00e1 vodivos\u0165 je e\u0161te lep\u0161ia, viac ako trikr\u00e1t vy\u0161\u0161ia ako u krem\u00edka. To umo\u017e\u0148uje zariadeniam vyroben\u00fdm zo SiC odv\u00e1dza\u0165 ve\u013ek\u00e9 mno\u017estvo prebyto\u010dn\u00e9ho v\u00fdkonu aj pri vy\u0161\u0161\u00edch teplot\u00e1ch bez po\u0161kodenia vn\u00fatorn\u00fdch \u0161trukt\u00far - \u010do krem\u00edkov\u00e9 zariadenia nedok\u00e1\u017eu efekt\u00edvne robi\u0165, \u010do vedie k vy\u0161\u0161ej hustote v\u00fdkonu a zn\u00ed\u017eeniu str\u00e1t.<\/p>\n
Karbid krem\u00edka, v pr\u00edrode be\u017ene ozna\u010dovan\u00fd ako moissanit, je zlo\u017eenie krem\u00edka a uhl\u00edka, ktor\u00e9 sa v pr\u00edrode vyskytuje ako modro\u010dierny miner\u00e1l s polovodi\u010dov\u00fdmi vlastnos\u0165ami. Ke\u010f\u017ee elektronick\u00e9 zariadenia, ako s\u00fa tranzistory, po\u010das svojej prev\u00e1dzky generuj\u00fa teplo, materi\u00e1ly schopn\u00e9 r\u00fdchlo ho odv\u00e1dza\u0165 s\u00fa nevyhnutn\u00fdmi komponentmi.<\/p>\n
Tepeln\u00e1 vodivos\u0165 karbidu krem\u00edka zohr\u00e1va neoddelite\u013en\u00fa \u00falohu pri odv\u00e1dzan\u00ed vzniknut\u00e9ho tepla. Vy\u0161\u0161ia tepeln\u00e1 vodivos\u0165 umo\u017e\u0148uje polovodi\u010dov\u00fdm zariadeniam r\u00fdchlej\u0161ie vychladn\u00fa\u0165 po vypnut\u00ed.<\/p>\n
Vynikaj\u00facu tepeln\u00fa vodivos\u0165 karbidu krem\u00edka mo\u017eno vysvetli\u0165 jeho ove\u013ea vy\u0161\u0161ou hustotou mrie\u017ekov\u00fdch defektov v porovnan\u00ed s in\u00fdmi polovodi\u010dmi, ako je napr\u00edklad nitrid g\u00e1lia. To umo\u017e\u0148uje, aby z povrchu \u010dipu unikalo viac tepla, ktor\u00e9 sa potom \u013eahko ochlad\u00ed pomocou vodn\u00fdch alebo vzduchov\u00fdch chladiacich met\u00f3d.<\/p>\n
Hust\u00e1 \u0161trukt\u00fara karbidu krem\u00edka a zn\u00ed\u017een\u00e9 mrie\u017ekov\u00e9 nap\u00e4tie ho z h\u013eadiska v\u00fdkonu prevy\u0161uj\u00fa nad in\u00fdmi polovodi\u010dov\u00fdmi materi\u00e1lmi, ako je krem\u00edk, a zni\u017euj\u00fa tvorbu dislok\u00e1ci\u00ed.<\/p>\n
Vedci sk\u00famaj\u00faci karbid krem\u00edka sk\u00famali r\u00f4zne faktory, ktor\u00e9 ovplyv\u0148uj\u00fa jeho tepeln\u00fa vodivos\u0165, aby lep\u0161ie pochopili, pre\u010do m\u00e1 tento materi\u00e1l tak\u00fa vysok\u00fa tepeln\u00fa vodivos\u0165, ako napr\u00edklad obsah kysl\u00edka\/dus\u00edka v mrie\u017eke, p\u00f3rovitos\u0165, ve\u013ekos\u0165 z\u0155n, f\u00e1zov\u00fa transform\u00e1ciu a zlo\u017eenie pr\u00edsad. Posudzovan\u00edm t\u00fdchto prvkov jednotlivo a objavovan\u00edm s\u00favislost\u00ed medzi nimi, ktor\u00e9 vysvet\u013euj\u00fa, pre\u010do konkr\u00e9tne aspekty vykazuj\u00fa vysok\u00fa tepeln\u00fa vodivos\u0165 - poznatky, ktor\u00e9 sa potom m\u00f4\u017eu pou\u017ei\u0165 na jeho \u010fal\u0161ie zlep\u0161ovanie.<\/p>\n
Karbid krem\u00edka, \u010dastej\u0161ie ozna\u010dovan\u00fd chemick\u00fdm n\u00e1zvom SiC, je chemick\u00e1 zl\u00fa\u010denina zlo\u017een\u00e1 z krem\u00edka a uhl\u00edka, ktor\u00fa mo\u017eno vyr\u00e1ba\u0165 vo ve\u013ekom. Prirodzene sa vyskytuje ako miner\u00e1l moissanit a m\u00e1 polovodi\u010dov\u00e9 vlastnosti, pou\u017e\u00edva sa ako brusivo, keramick\u00fd materi\u00e1l a surovina v kovospracuj\u00facom priemysle.<\/p>\n
Tranzistory z karbidu krem\u00edka pon\u00fakaj\u00fa v\u00e4\u010d\u0161ie mo\u017enosti blokovacieho nap\u00e4tia a ni\u017e\u0161\u00ed \u0161pecifick\u00fd odpor pri zapnut\u00ed ako tradi\u010dn\u00e9 krem\u00edkov\u00e9 IGBT, \u010do umo\u017e\u0148uje vy\u0161\u0161ie sp\u00ednacie r\u00fdchlosti ako ich krem\u00edkov\u00e9 n\u00e1protivky a pon\u00faka tak in\u017einierom viac mo\u017enost\u00ed optimaliz\u00e1cie syst\u00e9mu na vytvorenie men\u0161\u00edch a \u013eah\u0161\u00edch kon\u0161trukci\u00ed s lep\u0161ou \u00fa\u010dinnos\u0165ou konverzie energie - vr\u00e1tane kon\u0161trukci\u00ed pou\u017e\u00edvan\u00fdch ako trak\u010dn\u00e9 meni\u010de pre elektrick\u00e9 vozidl\u00e1.<\/p>\n
Hoci v\u00fdkonov\u00e9 polovodi\u010de so \u0161irok\u00fdm p\u00e1smom, ako je SiC, m\u00f4\u017eu poskytova\u0165 mnoho v\u00fdhod, tieto zariadenia maj\u00fa aj nev\u00fdhody. Jedn\u00fdm z hlavn\u00fdch probl\u00e9mov pri pou\u017e\u00edvan\u00ed tak\u00fdchto polovodi\u010dov je ich neschopnos\u0165 tolerova\u0165 vysok\u00e9 teploty - to vedie k probl\u00e9mom, ako je zv\u00fd\u0161en\u00fd \u00fanikov\u00fd pr\u00fad vo vypnutom stave a zn\u00ed\u017een\u00e1 spo\u013eahlivos\u0165.<\/p>\n
In\u017einieri za\u010dali pou\u017e\u00edva\u0165 najmodernej\u0161ie technol\u00f3gie, ktor\u00e9 pracuj\u00fa pri vy\u0161\u0161\u00edch sp\u00ednac\u00edch frekvenci\u00e1ch a pon\u00fakaj\u00fa v\u00fdhody, ako s\u00fa ni\u017e\u0161ie straty pri veden\u00ed, r\u00fdchlej\u0161ie sp\u00ednanie a vy\u0161\u0161ia \u00fa\u010dinnos\u0165, \u010do umo\u017e\u0148uje efekt\u00edvnej\u0161iu prev\u00e1dzku energetick\u00fdch syst\u00e9mov, zmen\u0161uje ve\u013ekos\u0165 pas\u00edvnych komponentov pre syst\u00e9my skladovania energie a podporuje cel\u00fd rad aplik\u00e1ci\u00ed na kone\u010dn\u00e9 pou\u017eitie, ako s\u00fa trak\u010dn\u00e9 meni\u010de pre elektrick\u00e9 vozidl\u00e1, ochrana obvodov a obnovite\u013en\u00e9 zdroje energie.<\/p>\n
Technol\u00f3gie so \u0161irokou p\u00e1smovou medzerou, ako je SiC, maj\u00fa potenci\u00e1l nahradi\u0165 tradi\u010dn\u00fd krem\u00edk v ur\u010dit\u00fdch aplik\u00e1ci\u00e1ch, hoci ich zv\u00fd\u0161en\u00e1 sp\u00ednacia frekvencia predstavuje ur\u010dit\u00e9 jedine\u010dn\u00e9 v\u00fdzvy, ktor\u00e9 je potrebn\u00e9 rie\u0161i\u0165 prostredn\u00edctvom pokro\u010dil\u00fdch v\u00fdrobn\u00fdch met\u00f3d a presn\u00fdch testovac\u00edch n\u00e1strojov. V tomto blogovom pr\u00edspevku sa budeme venova\u0165 k\u013e\u00fa\u010dov\u00fdm aspektom pri v\u00fdbere vysokor\u00fdchlostn\u00fdch v\u00fdkonov\u00fdch polovodi\u010dov, ako aj niektor\u00fdm osved\u010den\u00fdm postupom na ich efekt\u00edvne vyu\u017eitie v n\u00e1vrhoch.<\/p>\n
Krem\u00edk sa v elektronike pou\u017e\u00edva vo ve\u013ekej miere, ale pri aplik\u00e1ci\u00e1ch s vysok\u00fdm v\u00fdkonom sa za\u010d\u00ednaj\u00fa prejavova\u0165 jeho obmedzenia. Karbid krem\u00edka oproti tomu pon\u00faka ove\u013ea \u0161ir\u0161ie p\u00e1smo a pracuje pri vy\u0161\u0161\u00edch teplot\u00e1ch - poskytuje vy\u0161\u0161\u00ed v\u00fdkon a r\u00fdchlos\u0165, ako aj men\u0161ie po\u017eiadavky na pohon a zlep\u0161uje n\u00e1vrh obvodov.<\/p>\n
To je obzvl\u00e1\u0161\u0165 d\u00f4le\u017eit\u00e9 pre vysokofrekven\u010dn\u00e9 aplik\u00e1cie, ako je m\u00e4kk\u00e9 sp\u00ednanie LLC alebo TPPFC (korekcia \u00fa\u010dinn\u00edka v prechodovej f\u00e1ze). Na zn\u00ed\u017eenie zap\u00ednacieho odporu IGBT pri t\u00fdchto frekvenci\u00e1ch sa \u010dasto pou\u017e\u00edvaj\u00fa zariadenia s men\u0161inov\u00fdm nosi\u010dom, av\u0161ak ich zna\u010dn\u00e9 sp\u00ednacie straty a produkcia tepla obmedzuj\u00fa ich pou\u017eitie pri vy\u0161\u0161\u00edch frekvenci\u00e1ch. Naopak, zariadenia s v\u00e4\u010d\u0161inov\u00fdm nosi\u010dom (Schottkyho bari\u00e9rov\u00e9 di\u00f3dy a MOSFETy) v polovodi\u010doch SiC umo\u017e\u0148uj\u00fa vy\u0161\u0161ie menovit\u00e9 nap\u00e4tia so zn\u00ed\u017een\u00fdmi odpormi pri zapnut\u00ed.<\/p>\n
Polovodi\u010de SiC sa vyzna\u010duj\u00fa vysokou prieraznou pevnos\u0165ou, ktor\u00e1 umo\u017e\u0148uje ten\u0161ie driftov\u00e9 vrstvy a n\u00e1sledne ni\u017e\u0161\u00ed zap\u00ednac\u00ed odpor v porovnan\u00ed s ich kovov\u00fdmi n\u00e1protivkami, \u010do poskytuje ide\u00e1lne podmienky pre r\u00fdchle sp\u00ednanie. V spojen\u00ed s ich krat\u0161\u00edmi d\u013a\u017ekami hradiel s\u00fa tak SiC MOSFETy vhodn\u00e9 na vysok\u00e9 sp\u00ednacie r\u00fdchlosti.<\/p>\n
\u010cist\u00fd karbid krem\u00edka je od pr\u00edrody elektrick\u00fd izolant, av\u0161ak pridan\u00edm pr\u00edmes\u00ed (dopantov) alebo dopingov\u00fdch \u010dinidiel ho mo\u017eno premeni\u0165 na elektronick\u00fd polovodi\u010d. V\u00fdsledkom dopovania dus\u00edkom a fosforom je polovodi\u010d typu n, zatia\u013e \u010do dopovanie ber\u00fdliom, b\u00f3rom, hlin\u00edkom alebo g\u00e1liom m\u00f4\u017ee vytvori\u0165 polovodi\u010d typu p.<\/p>\n
SiC MOSFETy sp\u00f4sobili dramatick\u00fd posun vo v\u00fdkonovej elektronike. V\u010faka vy\u0161\u0161iemu blokovaciemu nap\u00e4tiu, r\u00fdchlej\u0161\u00edm \u010dasom sp\u00ednania a ni\u017e\u0161iemu zap\u00ednaciemu odporu ako ich krem\u00edkov\u00e9 n\u00e1protivky ved\u00fa SiC MOSFETy k bud\u00facim gener\u00e1ci\u00e1m v\u00fdkonov\u00fdch elektronick\u00fdch zariaden\u00ed.<\/p>\n
V\u00fdkonov\u00e9 komponenty na b\u00e1ze krem\u00edka, ako s\u00fa bipol\u00e1rne tranzistory s izolovan\u00fdm hradlom (IGBT) a krem\u00edkov\u00e9 superprechody, s\u00fa u\u017e dlho spo\u013eahliv\u00fdmi zdrojmi energie, ale pri vy\u0161\u0161\u00edch teplot\u00e1ch alebo sp\u00ednac\u00edch frekvenci\u00e1ch sa za\u010d\u00ednaj\u00fa prejavova\u0165 ich obmedzenia. Polovodi\u010de so \u0161irok\u00fdm p\u00e1smom, ako s\u00fa MOSFETy z karbidu krem\u00edka, pon\u00fakaj\u00fa prelomov\u00e9 v\u00fdkonnostn\u00e9 rie\u0161enia, ktor\u00e9 m\u00f4\u017eu tieto obmedzenia prekona\u0165.<\/p>\n
Karbid krem\u00edka (SiC) sa u\u017e dlho pou\u017e\u00edva ako abraz\u00edvum na br\u00fasne kot\u00fa\u010de a keramiku, ale v poslednom \u010dase sa SiC vo ve\u013ekej miere pou\u017e\u00edva aj ako n\u00e1hrada tradi\u010dn\u00fdch v\u00fdkonov\u00fdch zariaden\u00ed na b\u00e1ze krem\u00edka v aplik\u00e1ci\u00e1ch v\u00fdkonnej elektroniky. Tento pozoruhodn\u00fd posun je sp\u00f4soben\u00fd v\u00fdnimo\u010dn\u00fdmi fyzik\u00e1lnymi a elektronick\u00fdmi vlastnos\u0165ami SiC, zliatiny zlo\u017eenej z krem\u00edka a uhl\u00edka.<\/p>\n
Ako je to be\u017en\u00e9 pri zlo\u017een\u00fdch polovodi\u010doch, SiC vykazuje polytypizmus s r\u00f4znymi kry\u0161t\u00e1lov\u00fdmi \u0161trukt\u00farami, ktor\u00e9 vznikaj\u00fa v z\u00e1vislosti od toho, ako sa men\u00ed jeho chemick\u00e9 zlo\u017eenie v jednom rozmere. Polytyp 4H-SiC je \u0161iroko preferovan\u00fd pre v\u00fdkonov\u00e9 aplik\u00e1cie v\u010faka svojej tesne zabalenej hexagon\u00e1lnej at\u00f3movej \u0161trukt\u00fare, ktor\u00e1 u\u013eah\u010duje r\u00fdchle \u010dasy sp\u00ednania a schopnos\u0165 vysok\u00e9ho blokovacieho nap\u00e4tia.<\/p>\n
Zariadenia z krem\u00edka a SiC sa l\u00ed\u0161ia vo v\u00fdkone najm\u00e4 \u0161\u00edrkou p\u00e1smovej medzery, teda mno\u017estvom energie potrebnej na prechod z izola\u010dn\u00e9ho stavu do vodiv\u00e9ho. \u0160ir\u0161ia p\u00e1smov\u00e1 medzera umo\u017e\u0148uje r\u00fdchlej\u0161\u00ed a \u00fa\u010dinnej\u0161\u00ed prenos elektrickej energie, \u010do je v\u00fdhoda u\u017eito\u010dn\u00e1 najm\u00e4 v aplik\u00e1ci\u00e1ch s vysok\u00fdm v\u00fdkonom, ako s\u00fa trak\u010dn\u00e9 meni\u010de pre elektrick\u00e9 vozidl\u00e1.<\/p>\n
\u010eal\u0161ou k\u013e\u00fa\u010dovou v\u00fdhodou SiC je ni\u017e\u0161\u00ed tepeln\u00fd odpor ako u tradi\u010dn\u00fdch krem\u00edkov\u00fdch zariaden\u00ed, \u010do umo\u017e\u0148uje zmen\u0161i\u0165 induk\u010dn\u00e9 a kapacitn\u00e9 komponenty, a t\u00fdm zn\u00ed\u017ei\u0165 celkov\u00e9 syst\u00e9mov\u00e9 straty (vr\u00e1tane str\u00e1t pri veden\u00ed a str\u00e1t pri sp\u00ednan\u00ed). V polomostovom meni\u010di to m\u00f4\u017ee vies\u0165 k vy\u0161\u0161ej \u00fa\u010dinnosti, ako aj k ni\u017e\u0161\u00edm n\u00e1kladom na syst\u00e9m.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide is revolutionizing power electronics. It is slowly replacing traditional silicon transistors while offering significant performance enhancements. Due to the physical and electronic properties of material, engineers may find themselves reluctant to adopt this technology. Unfortunately, misconceptions may hold them back from adopting it fully. Silicon carbide occurs naturally as moissanite gems and synthetically […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-387","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/387","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/comments?post=387"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/387\/revisions"}],"predecessor-version":[{"id":388,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/387\/revisions\/388"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/media?parent=387"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/categories?post=387"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/tags?post=387"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}