Technol\u00f3gia invertorov z karbidu krem\u00edka je vzru\u0161uj\u00facim pokrokom v oblasti v\u00fdkonov\u00fdch polovodi\u010dov. V porovnan\u00ed s be\u017en\u00fdmi krem\u00edkov\u00fdmi zariadeniami sa m\u00f4\u017ee pochv\u00e1li\u0165 viacer\u00fdmi v\u00fdhodami vr\u00e1tane a\u017e desa\u0165kr\u00e1t ni\u017e\u0161\u00edch v\u00fdkonov\u00fdch str\u00e1t a lep\u0161\u00edch tepeln\u00fdch vlastnost\u00ed.<\/p>\n
Spolo\u010dnos\u0165 McLaren Applied vyu\u017e\u00edva vysokonap\u00e4\u0165ov\u00fd polovodi\u010dov\u00fd tranzistor CoolSiC s oxidom kovov (MOSFET), ktor\u00fd je \u0161peci\u00e1lne navrhnut\u00fd na pr\u00e1cu s vysokonap\u00e4\u0165ov\u00fdmi 800-voltov\u00fdmi syst\u00e9mami v trak\u010dn\u00fdch meni\u010doch elektrick\u00fdch vozidiel.<\/p>\n
Hustota v\u00fdkonu sa vz\u0165ahuje na mno\u017estvo elektrickej energie, ktor\u00e9 dok\u00e1\u017ee strieda\u010d vygenerova\u0165 na jednotku objemu, \u010do je d\u00f4le\u017eit\u00fd faktor pri aplik\u00e1ci\u00e1ch v elektrick\u00fdch vozidl\u00e1ch, ktor\u00e9 musia pracova\u0165 pri vysok\u00fdch nap\u00e4tiach a frekvenci\u00e1ch pre maxim\u00e1lnu energetick\u00fa \u00fa\u010dinnos\u0165. Na dosiahnutie tohto cie\u013ea musia v\u00fdrobcovia zmen\u0161i\u0165 celkov\u00fa ve\u013ekos\u0165 a z\u00e1rove\u0148 zv\u00fd\u0161i\u0165 v\u00fdstupn\u00fd v\u00fdkon - v \u010dom karbidov\u00e9 strieda\u010de krem\u00edka vynikaj\u00fa ve\u013emi vysokou hustotou v\u00fdkonu, v\u010faka ktorej s\u00fa podstatne men\u0161ie ako tradi\u010dn\u00e9 strieda\u010de.<\/p>\n
Parazitn\u00e1 induk\u010dnos\u0165 sa mus\u00ed obmedzi\u0165, aby sa zv\u00fd\u0161ila hustota v\u00fdkonu, preto\u017ee nadmern\u00e1 induk\u010dnos\u0165 m\u00f4\u017ee sp\u00f4sobi\u0165 probl\u00e9my, ako je zvonenie nap\u00e4tia a zv\u00fd\u0161en\u00e9 emisie EMI, ako aj ru\u0161enie n\u00edzkonap\u00e4\u0165ov\u00fdch sign\u00e1lov zo sn\u00edma\u010dov pr\u00fadu. Na \u00fa\u010dinn\u00e9 obmedzenie induk\u010dnosti by mali kon\u0161trukt\u00e9ri pri navrhovan\u00ed t\u00fdchto rie\u0161en\u00ed starostlivo zv\u00e1\u017ei\u0165 \u0161pecifik\u00e1cie nap\u00e1jac\u00edch modulov, technol\u00f3giu zbern\u00edc, kondenz\u00e1tory jednosmern\u00e9ho prepojenia a tepeln\u00e9 stohovanie.<\/p>\n
\u0160irok\u00e9 p\u00e1smo karbidu krem\u00edka umo\u017e\u0148uje tranzistorom tolerova\u0165 vy\u0161\u0161ie nap\u00e4tia a teploty ako typick\u00e9 krem\u00edkov\u00e9 polovodi\u010de, \u010do umo\u017e\u0148uje vy\u0161\u0161ie pracovn\u00e9 frekvencie, ktor\u00e9 zvy\u0161uj\u00fa \u00fa\u010dinnos\u0165 a z\u00e1rove\u0148 zni\u017euj\u00fa straty energie. Okrem toho materi\u00e1l karbidu krem\u00edka sl\u00fa\u017ei ako skvel\u00fd vodi\u010d tepla; trikr\u00e1t lep\u0161\u00ed ako krem\u00edk a druh\u00fd po diamante.<\/p>\n
V\u00fdskum spolo\u010dnosti NREL v oblasti tepeln\u00e9ho mana\u017ementu v\u00fdkonov\u00fdch modulov so \u0161irokou p\u00e1smovou medzerou im umo\u017enil vyvin\u00fa\u0165 n\u00faten\u00e9 vzduchov\u00e9 chladenie pre SiC meni\u010de, ktor\u00e9 umo\u017e\u0148uje zn\u00ed\u017ei\u0165 plochu komponentov, zlep\u0161i\u0165 v\u00fdkon a \u00fa\u010dinnos\u0165, ako aj podpori\u0165 prev\u00e1dzku s vy\u0161\u0161ou frekvenciou pre aplik\u00e1cie s vysokou z\u00e1\u0165a\u017eou.<\/p>\n
V\u00fdkonov\u00e1 elektronika pre elektrick\u00e9 vozidl\u00e1 (EV) zohr\u00e1va obrovsk\u00fa \u00falohu v oblasti \u00fa\u010dinnosti (a teda aj dojazdu a \u010dasu nab\u00edjania). Z\u00e1sadn\u00fa \u00falohu zohr\u00e1va najm\u00e4 meni\u010d, ktor\u00fd premie\u0148a jednosmern\u00fd pr\u00fad ulo\u017een\u00fd v bat\u00e9ri\u00e1ch na striedav\u00fd pr\u00fad potrebn\u00fd na jazdu. Technol\u00f3gia karbidu krem\u00edka (SiC) m\u00f4\u017ee \u013eahko pon\u00faknu\u0165 rie\u0161enie t\u00fdchto vysokonap\u00e4\u0165ov\u00fdch po\u017eiadaviek; u\u017e teraz si raz\u00ed cestu do meni\u010dov EV.<\/p>\n
Polovodi\u010dov\u00e9 zariadenia SiC prekonali tradi\u010dn\u00e9 bipol\u00e1rne tranzistory s izolovan\u00fdm hradlom (IGBT). M\u00f4\u017eu pracova\u0165 pri vy\u0161\u0161\u00edch teplot\u00e1ch a vyzna\u010duj\u00fa sa vy\u0161\u0161\u00edmi prierazn\u00fdmi po\u013eami, pri\u010dom maj\u00fa vynikaj\u00facu tepeln\u00fa vodivos\u0165 - to znamen\u00e1, \u017ee je mo\u017en\u00e9 dod\u00e1va\u0165 v\u00e4\u010d\u0161\u00ed pr\u00fad pri ni\u017e\u0161\u00edch strat\u00e1ch a lep\u0161ej \u00fa\u010dinnosti.<\/p>\n
\u0160irok\u00e9 p\u00e1smo SiC umo\u017e\u0148uje zariadeniam vyroben\u00fdm z tohto materi\u00e1lu odol\u00e1va\u0165 ove\u013ea vy\u0161\u0161\u00edm nap\u00e4tiam a teplot\u00e1m ako krem\u00edkov\u00e9 (Si) n\u00e1protivky, \u010do vedie k men\u0161iemu po\u010dtu poruchov\u00fdch re\u017eimov a vy\u0161\u0161ej spo\u013eahlivosti v priebehu \u010dasu - \u010do je obzvl\u00e1\u0161\u0165 cenn\u00e1 vlastnos\u0165 meni\u010dov, kde je dlhodob\u00e1 spo\u013eahlivos\u0165 rozhoduj\u00faca pre dlhodob\u00fa prev\u00e1dzku.<\/p>\n
Aby sa maximalizovala \u00fa\u010dinnos\u0165 meni\u010da z karbidu krem\u00edka, mus\u00ed sa pri jeho n\u00e1vrhu zoh\u013eadni\u0165 jeho v\u00fdhoda. To zah\u0155\u0148a starostliv\u00e9 rozmiestnenie PCB, efekt\u00edvne smerovanie nap\u00e1jania a efekt\u00edvne vyu\u017e\u00edvanie techn\u00edk tepeln\u00e9ho mana\u017ementu. Okrem toho sa musia pou\u017ei\u0165 aj pr\u00edsne techniky testovania a zabezpe\u010denia kvality, aby sa zaru\u010dilo, \u017ee kone\u010dn\u00fd v\u00fdrobok sp\u013a\u0148a ciele v oblasti v\u00fdkonu, \u00fa\u010dinnosti a spo\u013eahlivosti - vr\u00e1tane funk\u010dn\u00e9ho testovania, anal\u00fdzy elektrick\u00fdch charakterist\u00edk v\u00fdkonu a merania \u00fa\u010dinnosti.<\/p>\n
Karbid krem\u00edka (SiC) je extr\u00e9mne tvrd\u00fd polovodi\u010dov\u00fd materi\u00e1l. Okrem toho m\u00e1 vynikaj\u00facu tepeln\u00fa odolnos\u0165 a vy\u0161\u0161ie prierazn\u00e9 nap\u00e4tie - vlastnosti, v\u010faka ktor\u00fdm je ide\u00e1lny pre vysokonap\u00e4\u0165ov\u00e9 aplik\u00e1cie, ako s\u00fa napr\u00edklad meni\u010de.<\/p>\n
Meni\u010de z karbidu silik\u00f3nu sa stali spo\u013eahlivej\u0161\u00edmi v\u010faka pokroku vo v\u00fdrobn\u00fdch technik\u00e1ch. Patria sem nov\u00e9 rozmiestnenia dosiek plo\u0161n\u00fdch spojov a strat\u00e9gie tepeln\u00e9ho mana\u017ementu. Tieto n\u00e1vrhy u\u013eah\u010duj\u00fa zni\u017eovanie hluku, zvy\u0161ovanie \u00fa\u010dinnosti, zvl\u00e1danie vysok\u00fdch pr\u00fadov a zvl\u00e1danie vy\u0161\u0161\u00edch pr\u00fadov bez prehriatia; zlep\u0161uj\u00fa mo\u017enosti merania tepeln\u00fdch charakterist\u00edk, \u010do pom\u00e1ha v\u00fdrobcom r\u00fdchlo identifikova\u0165 probl\u00e9my; ako aj zabezpe\u010duj\u00fa splnenie bezpe\u010dnostn\u00fdch noriem a predpisov o elektromagnetickej kompatibilite.<\/p>\n
SiC MOSFETy sa od tradi\u010dn\u00fdch Si tranzistorov odli\u0161uj\u00fa ni\u017e\u0161\u00edm odporom na dan\u00fa plochu, \u010d\u00edm sa zni\u017euj\u00fa straty energie pri veden\u00ed a zvy\u0161uje sa \u00fa\u010dinnos\u0165. Okrem toho m\u00f4\u017eu pracova\u0165 pri vy\u0161\u0161\u00edch teplot\u00e1ch a \u00farovniach nap\u00e4tia ako ich tradi\u010dn\u00e9 Si n\u00e1protivky, \u010do z nich rob\u00ed lep\u0161iu vo\u013ebu pre trak\u010dn\u00e9 meni\u010de elektrick\u00fdch vozidiel, ktor\u00e9 vy\u017eaduj\u00fa v\u00e4\u010d\u0161\u00ed rozsah v\u00fdkonu na dlh\u0161ie jazdn\u00e9 vzdialenosti.<\/p>\n
Meni\u010de pre elektrick\u00e9 vozidl\u00e1 s\u00fa k\u013e\u00fa\u010dov\u00fdmi komponentmi elektrick\u00fdch syst\u00e9mov elektrick\u00fdch vozidiel, ktor\u00e9 premie\u0148aj\u00fa jednosmern\u00fd pr\u00fad z bat\u00e9ri\u00ed na striedav\u00fd pr\u00fad na pou\u017eitie v motore a sp\u00e4\u0165 na jednosmern\u00fd pr\u00fad na rekupera\u010dn\u00e9 brzdenie. Ako tak\u00e9 s\u00fa neoddelite\u013enou s\u00fa\u010das\u0165ou pohonu elektromobilov a musia by\u0165 spo\u013eahliv\u00e9. In\u017einieri experimentovali s r\u00f4znymi technol\u00f3giami; spolo\u010dnos\u0165 Drive System Design ned\u00e1vno vytvorila modul\u00e1rny dizajn meni\u010da s otvorenou platformou, ktor\u00fd ur\u00fdch\u013euje \u010das v\u00fdvoja a z\u00e1rove\u0148 pon\u00faka robustn\u00fd v\u00fdkon.<\/p>\n
Meni\u010de z karbidu krem\u00edka m\u00f4\u017eu by\u0165 v\u00fdrazne \u013eah\u0161ie ako ich tradi\u010dn\u00e9 n\u00e1protivky. Ich ni\u017e\u0161ia hmotnos\u0165 umo\u017e\u0148uje jednoduch\u0161iu in\u0161tal\u00e1ciu a prev\u00e1dzku, ako aj v\u00e4\u010d\u0161iu \u00fasporu energie a ni\u017e\u0161ie celkov\u00e9 n\u00e1klady na syst\u00e9m; ich vy\u0161\u0161ia \u00fa\u010dinnos\u0165 m\u00f4\u017ee dokonca pred\u013a\u017ei\u0165 dojazd v\u00e1\u0161ho elektromobilu!<\/p>\n
Meni\u010de z karbidu krem\u00edka pon\u00fakaj\u00fa okrem zn\u00ed\u017eenia hmotnosti aj mnoh\u00e9 \u010fal\u0161ie v\u00fdhody vr\u00e1tane lep\u0161ej hustoty v\u00fdkonu a \u00fa\u010dinnosti. Ich vy\u0161\u0161ia sp\u00ednacia frekvencia umo\u017e\u0148uje in\u017einierom zjednodu\u0161i\u0165 topol\u00f3gie obvodov a zn\u00ed\u017ei\u0165 po\u010det komponentov, \u010d\u00edm sa dosiahne v\u00e4\u010d\u0161ia \u00faspora n\u00e1kladov na mont\u00e1\u017e; v d\u00f4sledku toho s\u00fa tieto meni\u010de aj cenovo efekt\u00edvnej\u0161ie a dostupnej\u0161ie na n\u00e1kup a \u00fadr\u017ebu.<\/p>\n
Vynikaj\u00faca teplotn\u00e1 odolnos\u0165 karbidu krem\u00edka umo\u017e\u0148uje in\u017einierom zv\u00fd\u0161i\u0165 sp\u00ednaciu frekvenciu meni\u010dov, \u010d\u00edm sa zni\u017euje tepeln\u00e9 nam\u00e1hanie, odklon od rezonan\u010dn\u00fdch frekvenci\u00ed a zn\u00ed\u017eenie zvlnenia pr\u00fadu, \u010do vedie k ni\u017e\u0161\u00edm strat\u00e1m. MOSFETy 3. gener\u00e1cie z karbidu krem\u00edka od spolo\u010dnosti ROHM umo\u017e\u0148uj\u00fa in\u017einierom vyu\u017e\u00edva\u0165 tieto v\u00fdhody bez potreby extern\u00e9ho push-pull buffera.<\/p>\n
Karbid krem\u00edka je materi\u00e1l s extr\u00e9mne \u0161irokop\u00e1smovou medzerou, ktor\u00fd dok\u00e1\u017ee pracova\u0165 pri vy\u0161\u0161\u00edch teplot\u00e1ch, nap\u00e4tiach a frekvenci\u00e1ch ako typick\u00e9 krem\u00edkov\u00e9 polovodi\u010de. Okrem toho, v\u010faka svojej extr\u00e9mnej tvrdosti bol kedysi najtvrd\u0161ou syntetickou l\u00e1tkou na Zemi pred objavom karbidu b\u00f3ru. Karbid krem\u00edka m\u00e1 mnoho aplik\u00e1ci\u00ed vr\u00e1tane kon\u0161trukcie pancierov a pou\u017eitia ako brusiva na br\u00fasenie\/piesok, ako aj na r\u00f4zne priemyseln\u00e9 \u00fa\u010dely.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide inverter technology is an exciting power semiconductor advancement. It boasts several advantages over conventional silicon devices, including lower power losses up to ten times less and improved thermal performance. McLaren Applied is employing a high-voltage CoolSiC metal oxide semiconductor field-effect transistor (MOSFET), designed specifically to handle high voltage 800-volt systems found in electric […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-354","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/354","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/comments?post=354"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/354\/revisions"}],"predecessor-version":[{"id":355,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/354\/revisions\/355"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/media?parent=354"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/categories?post=354"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/tags?post=354"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}