Dopravky z karbidu krem\u00edka sa pou\u017e\u00edvaj\u00fa ako substr\u00e1ty vo v\u00fdkonov\u00fdch elektronick\u00fdch zariadeniach, ako s\u00fa di\u00f3dy a MOSFETy, pri\u010dom sa vyzna\u010duj\u00fa vynikaj\u00facou tvrdos\u0165ou, stabilitou pri p\u00f4soben\u00ed tepla a nap\u00e4tia a nereaktivitou z h\u013eadiska odolnosti vo\u010di oxid\u00e1cii. S\u00fa k dispoz\u00edcii v priemeroch 100 mm a 150 mm.<\/p>\n
Tieto substr\u00e1ty z\u00e1rove\u0148 poskytuj\u00fa ochranu pred tepeln\u00fdm \u0161okom sp\u00f4soben\u00fdm n\u00e1hlymi zmenami teploty, pri\u010dom v\u010faka n\u00edzkej koeficientu tepelnej roz\u0165a\u017enosti s\u00fa vhodn\u00e9 pre mal\u00e9 zariadenia a umo\u017e\u0148uj\u00fa umiestni\u0165 v\u00e4\u010d\u0161\u00ed po\u010det tranzistorov na jeden \u010dip.<\/p>\n
Karbid krem\u00edka je mimoriadne univerz\u00e1lny polovodi\u010dov\u00fd materi\u00e1l, ktor\u00fd sa dokonale hod\u00ed na pou\u017eitie vo v\u0161etk\u00fdch druhoch aplik\u00e1ci\u00ed v\u00fdkonovej elektroniky. V\u010faka \u0161irokej \u0161\u00edrke zak\u00e1zan\u00e9ho p\u00e1sma a vysok\u00e9mu prahu preru\u0161enia karbid krem\u00edka pri spr\u00e1vnom pou\u017eit\u00ed prin\u00e1\u0161a v\u00fdrazn\u00e9 zv\u00fd\u0161enie \u00fa\u010dinnosti.<\/p>\n
Dopravky z karbidu krem\u00edka (SiC) s\u00fa k\u013e\u00fa\u010dov\u00fdmi komponentmi pre efekt\u00edvne v\u00fdkonov\u00e9 elektronick\u00e9 zariadenia, ktor\u00e9 poskytuj\u00fa bezkonkuren\u010dn\u00fa odolnos\u0165 pri vysok\u00fdch teplot\u00e1ch a v extr\u00e9mnych podmienkach prostredia. Ich vynikaj\u00faca tepeln\u00e1 vodivos\u0165 tie\u017e umo\u017e\u0148uje odvod tepla po\u010das prev\u00e1dzky, v\u010faka \u010domu je SiC vynikaj\u00facou vo\u013ebou pre n\u00e1ro\u010dn\u00e9 v\u00fdkonov\u00e9 aplik\u00e1cie.<\/p>\n
Substr\u00e1ty z karbidu krem\u00edka pon\u00fakaj\u00fa v porovnan\u00ed s be\u017enej\u0161ie pou\u017e\u00edvan\u00fdmi materi\u00e1lmi, ako s\u00fa krem\u00edk a zaf\u00edr, mnoho v\u00fdhod, medzi ktor\u00e9 patr\u00ed aj ich tvrdos\u0165. Okrem toho tieto nereakt\u00edvne substr\u00e1ty nereaguj\u00fa s kyselinami, z\u00e1sadami ani roztaven\u00fdmi so\u013eami pri vysok\u00fdch teplot\u00e1ch a vyzna\u010duj\u00fa sa n\u00edzkou mierou tepelnej roz\u0165a\u017enosti a odolnos\u0165ou vo\u010di tepeln\u00fdm \u0161okom, \u010do prispieva k ich h\u00fa\u017eevnatosti.<\/p>\n
Kvalitu SiC do\u0161ti\u010diek mo\u017eno posudzova\u0165 na z\u00e1klade faktorov, ako s\u00fa orient\u00e1cia kry\u0161t\u00e1lov, drsnos\u0165 povrchu, hustota defektov a rozmery do\u0161ti\u010dky. Presn\u00e9 vyhodnotenie t\u00fdchto faktorov pomocou pokro\u010dil\u00fdch met\u00f3d charakteriz\u00e1cie, ako je r\u00f6ntgenov\u00e1 topografia a fotoluminiscen\u010dn\u00e9 mapovanie, umo\u017e\u0148uje v\u00fdrobcom sledova\u0165 v\u00fdkonnos\u0165 a z\u00e1rove\u0148 sp\u013a\u0148a\u0165 priemyseln\u00e9 normy.<\/p>\n
Polovodi\u010de so \u0161irokou energetickou medzerou s\u00fa nevyhnutn\u00e9 pre nap\u00e1janie bud\u00facich gener\u00e1ci\u00ed vysokov\u00fdkonn\u00fdch elektronick\u00fdch zariaden\u00ed. V\u010faka svojim v\u00fdnimo\u010dn\u00fdm vlastnostiam \u2013 medzi ktor\u00e9 patria \u0161irok\u00e9 energetick\u00e9 medzery, vysok\u00e9 prierazn\u00e9 elektrick\u00e9 polia a vynikaj\u00faca tepeln\u00e1 vodivos\u0165 \u2013 s\u00fa skvelou vo\u013ebou pre aplik\u00e1cie v oblasti v\u00fdkonovej elektroniky a vysokofrekven\u010dn\u00fdch (RF) technol\u00f3gi\u00ed.<\/p>\n
Energetick\u00e1 medzera materi\u00e1lu je energetick\u00e1 bari\u00e9ra odde\u013euj\u00faca jeho valen\u010dn\u00e9 a vodiv\u00e9 p\u00e1sma a ur\u010duje, \u010di je materi\u00e1l schopn\u00fd zosil\u0148ova\u0165 alebo sp\u00edna\u0165 elektronick\u00e9 sign\u00e1ly a elektrick\u00fa energiu.<\/p>\n
Karbid krem\u00edka je naj\u010dastej\u0161ie pou\u017e\u00edvan\u00fd polovodi\u010dov\u00fd materi\u00e1l so \u0161irokou energetickou medzerou. \u0160iroko sa vyu\u017e\u00edva v aplik\u00e1ci\u00e1ch s r\u00e1diov\u00fdmi frekvenciami (RF) a vo vysokor\u00fdchlostn\u00fdch tranzistoroch pracuj\u00facich pri vy\u0161\u0161\u00edch nap\u00e4tiach a teplot\u00e1ch, ako aj v syst\u00e9moch na konverziu energie, ktor\u00e9 tvoria neoddelite\u013en\u00fa s\u00fa\u010das\u0165 syst\u00e9mov obnovite\u013en\u00fdch zdrojov energie a infra\u0161trukt\u00fary elektrickej siete.<\/p>\n
V\u010faka \u0161irokej energetickej medzere SiC m\u00f4\u017eu tieto polovodi\u010de pracova\u0165 pri vy\u0161\u0161\u00edch nap\u00e4tiach s ni\u017e\u0161\u00edmi stratami, \u010do znamen\u00e1, \u017ee pri zvy\u0161ovan\u00ed prenosovej r\u00fdchlosti a frekvencie v komunika\u010dn\u00fdch syst\u00e9moch doch\u00e1dza k men\u0161\u00edm strat\u00e1m energie. SiC sa tak st\u00e1va jednou z najs\u013eubnej\u0161\u00edch technol\u00f3gi\u00ed pre bud\u00facnos\u0165 elektroniky, energetick\u00fa \u00fa\u010dinnos\u0165 a udr\u017eate\u013enos\u0165.<\/p>\n
Karbid krem\u00edka sa \u0161iroko vyu\u017e\u00edva pri v\u00fdrobe elektronick\u00fdch zariaden\u00ed pre r\u00f4zne \u00fa\u010dely. Tento materi\u00e1l sa vyzna\u010duje vysokou vodivos\u0165ou a odolnos\u0165ou vo\u010di tepeln\u00fdm \u0161okom \u2013 v\u010faka t\u00fdmto vlastnostiam je obzvl\u00e1\u0161\u0165 vhodn\u00fd pre zariadenia pracuj\u00face pri vysok\u00fdch teplot\u00e1ch alebo nap\u00e4tiach.<\/p>\n
V\u010faka svojej odolnosti a chemickej inertnosti je tento materi\u00e1l ide\u00e1lny. Nereaguje s kyselinami ani z\u00e1sadami a vydr\u017e\u00ed teploty a\u017e do 2700 \u00b0C bez toho, aby sa roztavil. Okrem toho mu jeho energetick\u00e1 medzera umo\u017e\u0148uje odol\u00e1va\u0165 elektromagnetick\u00fdm ru\u0161eniam a \u017eiareniu.<\/p>\n
Dopravky z karbidu krem\u00edka (SiC) s\u00fa z\u00e1kladn\u00fdmi prvkami modern\u00fdch elektronick\u00fdch zariaden\u00ed. Vyr\u00e1baj\u00fa sa z monokry\u0161talick\u00fdch ingotov zlo\u017een\u00fdch z vysoko \u010dist\u00e9ho zaf\u00edru, germ\u00e1nia alebo krem\u00edka, ktor\u00e9 sa n\u00e1sledne pomocou presn\u00fdch p\u00edl rozrez\u00e1vaj\u00fa na dopravky ur\u010den\u00e9 na v\u00fdrobu \u2013 Do\u0161ti\u010dky 4H-SiC a 6H-SiC s\u00fa obzvl\u00e1\u0161\u0165 ob\u013e\u00faben\u00e9 v\u010faka svojej vy\u0161\u0161ej pohyblivosti elektr\u00f3nov a \u0161ir\u0161ej \u0161\u00edrke zak\u00e1zan\u00e9ho p\u00e1sma \u2013 medzi ich aplik\u00e1cie patr\u00ed optika s kr\u00e1tkou vlnovou d\u013a\u017ekou, vysokoteplotn\u00e9 polovodi\u010de a aplik\u00e1cie v oblasti v\u00fdkonovej elektroniky.<\/p>\n
Dopravky z karbidu krem\u00edka (SiC) tvoria z\u00e1klad najmodernej\u0161ej technol\u00f3gie v\u00fdkonov\u00fdch polovodi\u010dov a s\u00fa nevyhnutn\u00e9 pre aplik\u00e1cie v oblasti obnovite\u013en\u00fdch zdrojov energie, elektrick\u00fdch vozidiel a leteck\u00e9ho a kozmick\u00e9ho priemyslu. V\u00fdroba dopraviek z SiC je v\u0161ak, \u017eia\u013e, n\u00e1ro\u010dn\u00fd a zlo\u017eit\u00fd proces.<\/p>\n
Karbid krem\u00edka sa od krem\u00edka l\u00ed\u0161i \u0161ir\u0161ou \u0161\u00edrkou zak\u00e1zan\u00e9ho p\u00e1sma, \u010do znamen\u00e1, \u017ee elektr\u00f3ny maj\u00fa v\u00e4\u010d\u0161ie \u0165a\u017ekosti s prechodom z valen\u010dn\u00e9ho p\u00e1sma do vodiv\u00e9ho p\u00e1sma a naopak. V\u010faka tomuto rozdielu s\u00fa substr\u00e1ty z karbidu krem\u00edka odoln\u00e9 vo\u010di silnej\u0161\u00edm elektrick\u00fdm poliam.<\/p>\n
Dopravky z karbidu krem\u00edka sa vyzna\u010duj\u00fa n\u00edzkym odporom v zapnutom stave a s\u00fa dostato\u010dne odoln\u00e9 na to, aby vydr\u017eali aj v t\u00fdch najn\u00e1ro\u010dnej\u0161\u00edch podmienkach, v\u010faka \u010domu s\u00fa ide\u00e1lne pre vysokoteplotn\u00e9 aplik\u00e1cie, ako s\u00fa meni\u010de v elektrick\u00fdch vozidl\u00e1ch a priemyseln\u00e9 zariadenia.<\/p>\n
V\u00fdrobcovia, ktor\u00ed na v\u00fdrobu SiC do\u0161ti\u010diek pou\u017e\u00edvaj\u00fa le\u0161tiace suspenzie na chemickej b\u00e1ze a le\u0161tiace podlo\u017eky z plsti alebo impregnovan\u00e9 polyuret\u00e1nom, vyu\u017e\u00edvaj\u00fa le\u0161tiace suspenzie s polyuret\u00e1nomimpregnovan\u00e9 le\u0161tiace podlo\u017eky na odstr\u00e1nenie po\u0161kodenia oxidovej vrstvy na povrchu substr\u00e1tov a n\u00e1sledne po le\u0161ten\u00ed nan\u00e1\u0161aj\u00fa ochrann\u00fa vrstvu z polyuret\u00e1nu alebo nitridu krem\u00edka, aby sa dosiahol hladk\u00fd povrch substr\u00e1tu a aby sa zabr\u00e1nilo \u010fal\u0161iemu po\u0161kodeniu po\u010das \u010fal\u0161\u00edch krokov spracovania. Pomocou zariaden\u00ed na spracovanie jednotliv\u00fdch do\u0161ti\u010diek dok\u00e1\u017eu vyrobi\u0165 a\u017e desa\u0165 150 mm do\u0161ti\u010diek, av\u0161ak obmedzenia v\u00fdrobnej kapacity obmedzuj\u00fa v\u00fdrobn\u00e9 kapacity na trhu.<\/p>\n
Dopravky z karbidu krem\u00edka (SiC) s\u00fa k\u013e\u00fa\u010dov\u00e9 pre rozvoj mnoh\u00fdch technol\u00f3gi\u00ed, na ktor\u00e9 sa dnes spoliehame, od v\u00fdkonovej elektroniky a\u017e po siete 5G. SiC m\u00e1 potenci\u00e1l transformova\u0165 r\u00f4zne aplik\u00e1cie v oblasti polovodi\u010dov.<\/p>\n
SiC je zlo\u017een\u00fd polovodi\u010d pozost\u00e1vaj\u00faci z at\u00f3mov krem\u00edka a uhl\u00edka, ktor\u00e9 s\u00fa navz\u00e1jom spojen\u00e9 do inovat\u00edvnej kry\u0161t\u00e1lovej \u0161trukt\u00fary naz\u00fdvanej tetraedrick\u00e1 v\u00e4zbov\u00e1 konfigur\u00e1cia, \u010do vedie k r\u00f4znym jedine\u010dn\u00fdm fyzik\u00e1lnym vlastnostiam. Po prv\u00fdkr\u00e1t bol komer\u010dne vyroben\u00fd v roku 1893 ako priemyseln\u00fd br\u00fasny materi\u00e1l a odvtedy sa jeho vyu\u017eitie roz\u0161\u00edrilo na mno\u017estvo polovodi\u010dov\u00fdch aplik\u00e1ci\u00ed, vr\u00e1tane Schottkyho di\u00f3d (ako di\u00f3d s prechodovou bari\u00e9rou, tak aj di\u00f3d bez prechodovej bari\u00e9ry), sp\u00edna\u010dov a tranzistorov s po\u013eov\u00fdm efektom na b\u00e1ze oxidu kovu a polovodi\u010da.<\/p>\n
Na rozdiel od tradi\u010dn\u00fdch krem\u00edkov\u00fdch do\u0161ti\u010diek pon\u00faka karbid krem\u00edka vynikaj\u00facu odolnos\u0165 proti oxid\u00e1cii a chemick\u00fa inertnos\u0165 a z\u00e1rove\u0148 disponuje vysokou mechanickou pevnos\u0165ou \u2013 je to jedin\u00fd polovodi\u010dov\u00fd materi\u00e1l, ktor\u00fd je schopn\u00fd odol\u00e1va\u0165 podmienkam vo vesm\u00edre, ako s\u00fa extr\u00e9mne teploty a \u00farovne \u017eiarenia.<\/p>\n
V\u00fdroba vysokokvalitnej SiC do\u0161ti\u010dky za\u010d\u00edna vytvoren\u00edm hladk\u00e9ho povrchu s n\u00edzkou drsnos\u0165ou. Chemicko-mechanick\u00e9 le\u0161tenie (CMP), ktor\u00e9 predstavuje z\u00e1vere\u010dn\u00fd krok vo v\u00fdrobe do\u0161ti\u010diek, sl\u00fa\u017ei na pr\u00edpravu substr\u00e1tu pre epitaktick\u00fd rast, pri\u010dom sp\u00f4sobuje len minim\u00e1lne zmeny tvaru do\u0161ti\u010dky.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide wafers are used as substrates in power electronic devices such as diodes and MOSFETs, offering superior hardness, stability under heat and voltage and non-reactivity with respect to oxidation resistance. Available in 100mm and 150mm diameter sizes. These substrates also provide protection from thermal shock caused by sudden changes in temperature, with their low […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-333","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/333","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/comments?post=333"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/333\/revisions"}],"predecessor-version":[{"id":334,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/posts\/333\/revisions\/334"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/media?parent=333"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/categories?post=333"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/sk\/wp-json\/wp\/v2\/tags?post=333"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}