Amorficzny węglik krzemu

Like diamond, graphene and other exotic materials, amorphous silicon carbide (a-SiC) is an exceptionally strong material – however unlike its crystalline counterparts it does not exhibit long range order in its atomic arrangement.

This anomaly helps explain how this material manages to achieve such remarkable tensile strength; Professor Norte estimates that up to 10 medium-sized cars could be suspended from one strip of a-SiC before it breaks.


Silicon carbide (SiC) is an inorganic chemical compound composed of carbon and silicon. Naturally occurring as the rare mineral moissanite, SiC can also be found as an abrasive or bulletproof vest plate ceramic material. With so many technological applications it holds enormous promise – its qualities range from hardness and high Young’s modulus values, excellent mechanical and electrical properties as well as broad transparency window across visible wavelengths to excellent mechanical and electrical performance in its crystal form (c-SiC).

SiC has recently drawn scientists’ interest because of its superior tensile strength. This new material, which combines both crystalline and amorphous materials, boasts yield strengths 10 times greater than Kevlar used for bulletproof vests – making it an extremely robust yet flexible material suitable for many uses including ultrasensitive microchip sensors.

Amorphous SiC is composed of randomly-stacked Lego pieces with no regular pattern or order to its atomic structure, similar to its appearance when laid flat on a surface. But unlike its crystalline counterparts, its randomisation doesn’t lead to fragility but instead strengthens resilience and versatility; 10 gigaPascal strength marks it out from other materials as proof. This incredible strength means ten cars would need to weigh on it to break this material apart!

These extraordinary strengths make a-SiC an excellent material to fabricate MEMS (microelectromechanical systems) structures such as membranes, cantilevers and strings. Furthermore, due to the lower temperatures required for deposition than with c-SiC deposition methods, a-SiC can also provide for high yield production or wafer scale deposition processes.

To demonstrate the superior performance of a-SiC films, we fabricated and measured ring resonators made of thin films of this material. Resonators were fitted with analytical expressions before being analysed using finite element method simulation; results demonstrated that thin films of a-SiC have intrinsic quality factors of over 4×105, surpassing even those found in c-SiN and crystalline SiC with 0.78dB/cm waveguide propagation loss – an essential step toward its use in integrated quantum photonics applications.


Amorphous silicon carbide offers several characteristics that make it an excellent candidate for use with photonic platforms, including high chemical selectivity, low thermal expansion coefficient, hardness and rigidity – properties which make it suitable for mechanical sensor applications like nanomechanical resonators. Furthermore, research has identified exceptional tensile mechanical quality factors making amorphous silicon carbide one of the top materials for force, acceleration and displacement sensing applications.

Amorphous SiC has a much lower Young’s modulus than its silicon (c-Si) counterpart, making it more flexible for use in large-area electronics applications like liquid crystal displays. Furthermore, its amorphous structure reduces energy required to achieve equal electric current density as its silicon-based counterpart.

Low thermal expansion properties make PMMA an excellent material to protect metal-based optical devices like optical fibers and lenses from thermal expansion, such as lenses. Unfortunately, its brittleness makes it challenging to use in bulk applications like windows or mirrors.

Amorphous silicon carbide stands out as an ideal material for optical waveguides and amplifiers due to its strong third-order nonlinearity, making it the perfect material to employ intermediate states within its band gap that are enhanced through its amorphous structures for two photon absorption and four wave mixing processes.

Moreover, amorphous SiC boasts low thermal and electrical conductivities, helping it significantly improve integrated optical devices. Furthermore, its thermal conductivity compares favorably with both tungsten and boron carbide materials and makes it suitable for low temperature applications such as thermal management or high speed communications.

Silicon Carbide films can be created through various techniques, including plasma-based chemical vapor deposition (PCVD). Films produced this way can be tuned to specific wavelengths for optical applications or formed into resonator structures; additionally they may also be deposited as thin layers on top of other substrates or materials like insulating glass substrates.

Molecular dynamics simulations have demonstrated that amorphous SiC has a layered structure with both heteronuclear and homonuclear bonds present, the ratio of which changes upon annealing. This finding confirms experimentally measured radial distribution functions.


Amorphous silicon carbide’s scalability makes it the ideal material for many high-performance applications, including sensors, solar cells, space exploration technologies and structural composites. Furthermore, its yield strength surpasses Kevlar, making it suitable for ultrasensitive microchip sensors as well as advanced solar cells and space exploration technologies. In addition, its unique mechanical properties enable strain engineering that allows strain engineering in robust materials like structural composites and mechanical seals.

Polycrystalline silicon (c-Si) features an interwoven crystal structure while amorphous silicon (a-Si), on the other hand, features small crystallites arranged granularly within its texture. As such, amorphous silicon (a-Si) can tolerate deformation more readily, permitting thinner films with lower process temperatures than with its counterpart c-Si.

Low density can also be an asset to neural interfaces, which rely on thin film electrodes combined with high frequency vibrations to stimulate or record brain activity. Unfortunately, maintaining their integrity during chronic implant can become increasingly challenging due to complications caused by both biological and abiotic influences like inflammation reactions and thickness reduction of implants.

Aside from its mechanical properties, a-SiC also features an impressive Young’s modulus that makes it useful in designing patterned resonators for neural interfaces. To demonstrate this application, the team fabricated and characterized membranes, cantilevers, strings made of a-SiC; performed an analytical fit to establish their intrinsic quality factor, Young’s modulus, Poisson ratio and density; ran finite element method simulations to predict fundamental mode frequencies on these cantilevers/strings; found their results agreed well with experimental measurements.

A-SiC is a promising semiconductor material for next-generation high-temperature, high-frequency and high-power optoelectronic devices. Its band gap exhibits substantial third-order nonlinearity that is 10 times higher than SiN and crystalline SiC, giving rise to enhanced two-photon absorption and four-wave mixing processes. Furthermore, its thermal stability facilitates hybrid integration. Furthermore, this material boasts good chemical resistance as an abundant source of hydrogen dopants; making it suitable as surface passivation surface passivation coatings against corrosion etching and abrasion.


At a time when high-strength materials have historically been dominated by 2D and crystalline counterparts, amorphous silicon carbide has emerged as an industry game-changer. This material’s unique amorphous structure gives it extraordinary strength despite lacking any coherent lattice with ordered atom arrangements; in fact it can withstand enormous stress–equal to hanging 10 medium-sized cars off a strip of duct tape before succumbing to strain.

A-SiC stands out from its crystalline counterparts when it comes to manufacturing due to its amorphous character; this material makes for easy production processes like thin-film transistors (TFTs), which are widely used for liquid crystal displays and X-ray imagers among many other uses. A key advantage is scalability: unlike graphene and diamond, which require large production runs for large scale manufacturing operations, a-SiC production can occur on wafer scale.

Scalability has opened up many applications in microchip sensor technology. Durable materials provide better protection for satellites and spacecraft against harsh environmental conditions encountered in outer space; and could even enhance solar cell technology to enable more efficient production of clean energy.

Finally, a-SiC is an exciting material for integrated quantum photonics applications. With its wide band gap and reduced two-photon absorption at telecom wavelengths as well as its broad transparency window across visible and near-infrared spectrums, a-SiC makes for an excellent platform for single photon sources and spin qubits.

Shortly speaking, a-SiC’s revolutionary properties will soon transform multiple industries. Its strength, scalability, and versatility are already playing a crucial role in ultra-high speed communications and optical technologies; but perhaps its most groundbreaking application lies within interstellar exploration; where its ability to withstand extraordinary forces may enable rockets and spaceships that reach Mars or even further out into our universe utilizing this material. Thus its future appears promising, while its effects are immense upon society at large.

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