Sil\u012bcija karb\u012bda diodes ir k\u013cuvu\u0161as aizvien popul\u0101r\u0101kas da\u017e\u0101dos sh\u0113mu projektos, jo to veiktsp\u0113jas l\u012bmenis ir augst\u0101ks un izm\u0113rs maz\u0101ks nek\u0101 sil\u012bcija ier\u012bc\u0113m.<\/p>\n
WeEn SiC Schottky Barrier Diodes ir pieejamas da\u017e\u0101d\u0101s iepakojumos, s\u0101kot no vadiem un skr\u016bv\u0113m l\u012bdz SMD ier\u012bc\u0113m ar virsmas mont\u0101\u017eu, un tiek pak\u013cautas pla\u0161\u0101m iztur\u012bbas p\u0101rbaud\u0113m, lai nodro\u0161in\u0101tu to augstu kvalit\u0101ti un uzticam\u012bbu.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) izce\u013cas k\u0101 iespaid\u012bgs pusvad\u012bt\u0101js, jo tam ir pla\u0161a joslas sprauga, kas \u013cauj energoelektronikas ier\u012bc\u0113m darboties augst\u0101k\u0101s temperat\u016br\u0101s, spriegumos un frekvenc\u0113s nek\u0101 to analogiem uz sil\u012bcija b\u0101zes, kuriem ir zem\u0101ka joslas sprauga, kas ierobe\u017eo veiktsp\u0113ju. \u0160\u012b \u012bpa\u0161\u012bba at\u0161\u0137ir SiC no parastaj\u0101m sil\u012bcija ier\u012bc\u0113m, kuru veiktsp\u0113ju ierobe\u017eo ierobe\u017eot\u0101 joslas sprauga.<\/p>\n
Platjoslas diodes \u013cauj elektroniem \u0101tr\u0101k p\u0101rvietoties caur SiC diod\u0113m, t\u0101d\u0113j\u0101di palielinot str\u0101vas bl\u012bvumu un paaugstinot efektivit\u0101ti t\u0101d\u0101s ier\u012bc\u0113s k\u0101 baro\u0161anas avoti. \u0160\u012b \u012bpa\u0161\u012bba ir \u012bpa\u0161i svar\u012bga \u0101trgaitas komut\u0101cijas lietojumos, piem\u0113ram, komut\u0101cijas baro\u0161anas avotos.<\/p>\n
SiC \u0160otkija diod\u0113m ir iev\u0113rojami liel\u0101ks reversais sadal\u012b\u0161an\u0101s spriegums nek\u0101 to sil\u012bcija analogiem; bie\u017ei vien tas p\u0101rsniedz 1 kV. Tas \u013cauj t\u0101s izmantot sh\u0113m\u0101s, kur\u0101s tradicion\u0101l\u0101s sil\u012bcija \u0160otkija diodes var\u0113tu saboj\u0101t komponentus, nodro\u0161inot diod\u0113m iev\u0113rojamu daudzpus\u012bbu.<\/p>\n
SiC diod\u0113m sal\u012bdzin\u0101jum\u0101 ar tradicion\u0101laj\u0101m sil\u012bcija \u0160otkija diod\u0113m ir augst\u0101ka nopl\u016bdes str\u0101va, kas v\u0113l vair\u0101k palielina to daudzpus\u012bbu. Turkl\u0101t SiC izcil\u0101 siltumvad\u012btsp\u0113ja - gandr\u012bz tr\u012bs reizes augst\u0101ka nek\u0101 sil\u012bcijam - \u013cauj izklied\u0113t vair\u0101k siltuma, neradot termisk\u0101 sabrukuma risku.<\/p>\n
SiC diodes ir sevi pier\u0101d\u012bju\u0161as k\u0101 daudzpus\u012bgi risin\u0101jumi, un t\u0101s var izmantot daudz\u0101s jom\u0101s, s\u0101kot no avi\u0101cijas un kosmosa l\u012bdz automobi\u013cu un r\u016bpniec\u012bbas iek\u0101rt\u0101m. M\u016bsu 650 V SiC MPS diodes ir pat apstiprin\u0101tas izmanto\u0161anai kosmosa misij\u0101s, piem\u0113ram, ESA-JUICE misij\u0101.<\/p>\n
Neatkar\u012bgi no to konfigur\u0101cijas - vienk\u0101r\u0161as, dubultas vai tilta - WeEn augstsprieguma SiC \u0160otkija diodes var iztur\u0113t l\u012bdz pat 1700 V spriegumu vienk\u0101r\u0161\u0101s, dubult\u0101s vai tilta lietojumprogramm\u0101s, padarot t\u0101s piem\u0113rotas baro\u0161anas avotiem un citiem \u0101trgaitas komut\u0101cijas lietojumiem, piem\u0113ram, herm\u0113tiskiem sl\u0113d\u017eu pane\u013ciem un baro\u0161anas avotiem. Tie ir herm\u0113tiskos iepakojumos, lai atbilstu lietojumprogrammu pras\u012bb\u0101m bez termisk\u0101s izs\u012bk\u0161anas riska, vienlaikus izturot augst\u0101kas temperat\u016bras nek\u0101 standarta sil\u012bcija risin\u0101jumi.<\/p>\n
Sal\u012bdzinot ar sil\u012bciju, sil\u012bcija karb\u012bds var lepoties ar \u0101rk\u0101rt\u012bgi augstu sadal\u012b\u0161an\u0101s elektrisko lauku, kas \u013cauj izgatavot diodes ar daudz augst\u0101ku maksim\u0101lo reverso spriegumu. Tas \u013cauj SiC \u0160otkija diodes izmantot ar energoapg\u0101di saist\u012bt\u0101s sh\u0113m\u0101s, kas cit\u0101di neb\u016btu iesp\u0113jamas, izmantojot parast\u0101s sil\u012bcija diodes.<\/p>\n
Tradicion\u0101laj\u0101m sil\u012bcija \u0160otkija diod\u0113m maksim\u0101lais reversais spriegums parasti ir aptuveni 200 V; sal\u012bdzin\u0101jumam - sil\u012bcija karb\u012bda \u0160otkija diodes pied\u0101v\u0101 l\u012bdz 1,2 kV vai da\u017eos gad\u012bjumos pat l\u012bdz 1,6 kV, t\u0101p\u0113c t\u0101s ir piem\u0113rotas izmanto\u0161anai pla\u0161\u0101k\u0101 lietojumu un jaudas konstrukciju kl\u0101st\u0101. Tas padara to izmanto\u0161anu \u013coti izdev\u012bgu.<\/p>\n
Sil\u012bcija karb\u012bda \u0160otkija diod\u0113m ir ar\u012b zem\u0101ka iesl\u0113gt\u0101 st\u0101vok\u013ca pretest\u012bba nek\u0101 to sil\u012bcija analogiem, kas \u013cauj t\u0101m caurvad\u012bt liel\u0101ku str\u0101vu ar maz\u0101kiem savienojuma izm\u0113riem un ietaup\u012bt vietu konstrukcij\u0101s - \u012bpa\u0161i noder\u012bgi elektroniskajos jaudas p\u0101rveidot\u0101jos vai \u0101trgaitas elektroniskaj\u0101s ier\u012bc\u0113s, kur\u0101m nepiecie\u0161ama liel\u0101ka veiktsp\u0113ja, bet maz\u0101kas formas.<\/p>\n
Iev\u0113r\u012bbas cien\u012bgs ir ar\u012b fakts, ka sil\u012bcija karb\u012bda diodes darbojas daudz augst\u0101k\u0101s frekvenc\u0113s nek\u0101 to sil\u012bcija analogi, kas \u013cauj t\u0101s izmantot efekt\u012bv\u0101k\u0101s elektronisko sh\u0113mu konstrukcij\u0101s. Tas, savuk\u0101rt, \u013cauj sasniegt augst\u0101ku efektivit\u0101tes l\u012bmeni jebkur\u0101 konstrukcij\u0101, vienlaikus \u013caujot izmantot maz\u0101kas ier\u012bces, ko var izmantot da\u017e\u0101dos lietojumos, piem\u0113ram, saules fotoelektrisk\u0101s ener\u0123ijas sist\u0113m\u0101s, elektrisko transportl\u012bdzek\u013cu ener\u0123ijas sist\u0113m\u0101s, radiofrekven\u010du detektoros un r\u016bpnieciskaj\u0101s taisngrie\u017eu sh\u0113m\u0101s. Tom\u0113r, lai ar sil\u012bcija karb\u012bda diod\u0113m sasniegtu maksim\u0101lu veiktsp\u0113ju, nepiecie\u0161ama stingra ra\u017eo\u0161anas vad\u012bba un kvalit\u0101tes kontroles pas\u0101kumi. Tas ir svar\u012bgi, lai ier\u012bces netiktu boj\u0101tas t\u0101du faktoru d\u0113\u013c k\u0101 bipol\u0101r\u0101 boj\u0101\u0161an\u0101s.<\/p>\n
Sil\u012bcija karb\u012bda (SiC) \u0160otkija diodes ir k\u013cuvu\u0161as par arvien popul\u0101r\u0101ku izv\u0113li elektronisko sh\u0113mu projekt\u0113\u0161an\u0101, jo t\u0101m ir liels p\u0101rsl\u0113g\u0161an\u0101s \u0101trums, maz\u0101ki ener\u0123ijas zudumi un maz\u0101ki izm\u0113ri sal\u012bdzin\u0101jum\u0101 ar sil\u012bcija analogiem. Tas pal\u012bdz uzlabot efektivit\u0101tes l\u012bmeni, vienlaikus samazinot baro\u0161anas avotu, nep\u0101rtrauktas baro\u0161anas sist\u0113mu, r\u016bpniecisko motoru piedzi\u0146as \u0137\u0113\u017eu un elektrisko transportl\u012bdzek\u013cu str\u0101vas \u0137\u0113\u017eu svaru.<\/p>\n
SiC \u0160otkija diodes sast\u0101v no diviem komponentiem, kas parasti ir izgatavoti no plat\u012bna vai tit\u0101na met\u0101la kontaktiem, kas novietoti uz n tipa SiC pusvad\u012bt\u0101ja materi\u0101la sl\u0101\u0146a un atdal\u012bti ar elektrisko vad\u012bt\u0101ju, piem\u0113ram, vara stiepli, t\u0101d\u0113j\u0101di veidojot \u0160otkija barjeru, kas caur to \u013cauj str\u0101vu tikai vien\u0101 virzien\u0101. Sprieguma kritumu nosaka algebrisk\u0101 starp\u012bba starp anoda un katoda potenci\u0101liem da\u017e\u0101d\u0101s darba temperat\u016br\u0101s.<\/p>\n
SiC pusvad\u012bt\u0101ji at\u0161\u0137iras no standarta sil\u012bcija diod\u0113m ar to, ka tiem ir daudz augst\u0101ka siltumvad\u012btsp\u0113ja, kas noz\u012bm\u0113, ka tie izklied\u0113 vair\u0101k siltuma uz plat\u012bbas vien\u012bbu, t\u0101d\u0113j\u0101di iev\u0113rojami samazinot pretest\u012bbu un siltuma zudumus, kas ietekm\u0113 tie\u0161\u0101 sprieguma kritumus. SiC \u0160otkija diodes var iztur\u0113t ar\u012b liel\u0101kus temperat\u016bras diapazonus nek\u0101 to sil\u012bcija analogi un var nodro\u0161in\u0101t aizsardz\u012bbu pret \u012bslaic\u012bgiem termiskiem notikumiem, k\u0101 ar\u012b potenci\u0101liem boj\u0101juma veidiem, kas paz\u012bstami k\u0101 termiskais b\u0113gums.<\/p>\n
Lai saglab\u0101tu SiC diodes veiktsp\u0113jas stabilit\u0101ti, b\u016btiska noz\u012bme ir uzticamai ra\u017eo\u0161anas vad\u012bbai un kvalit\u0101tes kontroles praksei, tostarp stingriem iztur\u012bbas testiem skarbos str\u0101vas cikliskuma apst\u0101k\u013cos un 100% statisko parametru un p\u0101rsprieguma str\u0101vas apstr\u0101des testiem. Tas nodro\u0161ina, ka jebkura SiC diode darbosies, k\u0101 paredz\u0113ts, jebkur\u0101 lietojum\u0101, kur t\u0101 tiek izmantota, pat ekstrem\u0101los ekspluat\u0101cijas apst\u0101k\u013cos.<\/p>\n
Sil\u012bcija karb\u012bda \u0160otkija diodes var lepoties ar \u012bpa\u0161i \u0101tru atjauno\u0161an\u0101s laiku, kas \u013cauj t\u0101m iesl\u0113gties un izsl\u0113gties ar lielu \u0101trumu, ar minim\u0101lu kapacit\u0101ti, kad t\u0101s ir atpaka\u013cvirzien\u0101, - \u0161\u012bs \u012bpa\u0161\u012bbas veicina lab\u0101ku energoelektrisko pusvad\u012bt\u0101ju ier\u012b\u010du efektivit\u0101ti.<\/p>\n
\u0160\u012bs platjoslas spraugas jaudas pusvad\u012bt\u0101ju ier\u012bces ir paredz\u0113tas, lai aizst\u0101tu tradicion\u0101l\u0101s sil\u012bcija diodes t\u0101dos lietojumos k\u0101 augstas efektivit\u0101tes serveri, nep\u0101rtrauktas baro\u0161anas avoti (UPS), saules fotoelementu invertori un motoru piedzi\u0146as. To galven\u0101s priek\u0161roc\u012bbas ir samazin\u0101ti jaudas zudumi un papla\u0161in\u0101ts darb\u012bbas temperat\u016bras diapazons.<\/p>\n
Sil\u012bcija karb\u012bda materi\u0101ls ar pla\u0161u joslas spraugu nodro\u0161ina augst\u0101ku sprieguma sadal\u012bjumu un liel\u0101ku p\u0101rsl\u0113g\u0161an\u0101s \u0101trumu, kas ir kritiski svar\u012bgi komponenti lielas str\u0101vas apstr\u0101dei da\u017e\u0101d\u0101s temperat\u016br\u0101s.<\/p>\n
SiC \u0160otkija diodes at\u0161\u0137iras no parastaj\u0101m sil\u012bcija diod\u0113m ar to, ka t\u0101s izmanto met\u0101la un pusvad\u012bt\u0101ja savienojumu bie\u017e\u0101k sastopam\u0101 PN savienojuma viet\u0101, un, aktiviz\u0113tas ar elektrisko impulsu, var \u013caut str\u0101vai pl\u016bst vien\u0101 virzien\u0101; tom\u0113r, kad \u0161\u012b str\u0101va tiek izsl\u0113gta, ir nepiecie\u0161ams zin\u0101ms laiks, lai t\u0101s atpaka\u013cgaitas str\u0101vas pl\u016bsma atgrieztos atpaka\u013c - \u0161o periodu sauc par atpaka\u013cgaitas atjauno\u0161an\u0101s laiku.<\/p>\n
SiC diod\u0113m ir iev\u0113rojamas priek\u0161roc\u012bbas sal\u012bdzin\u0101jum\u0101 ar l\u012bdz\u012bga izm\u0113ra l\u012bdz\u012bga tipa diod\u0113m, jo to revers\u0101s atjauno\u0161an\u0101s laiks ir daudz \u0101tr\u0101ks, kas \u013cauj t\u0101s iesl\u0113gt un izsl\u0113gt pie augst\u0101k\u0101m frekvenc\u0113m, vienlaikus gal\u012bgaj\u0101 konstrukcij\u0101 izmantojot maz\u0101kus magn\u0113tiskos un pas\u012bvos komponentus.<\/p>\n
Izmantojot COMSOL Multiphysics, tika veiktas energoelektronisk\u0101s simul\u0101cijas, lai sal\u012bdzin\u0101tu SiC \u0160otkija diod\u0113m ar sil\u012bcija (Si) un \u0123erm\u0101nija (Ge) diod\u0113m. Lai gan to atjauno\u0161an\u0101s laiki bija sal\u012bdzin\u0101mi, SiC diodes kop\u0113j\u0101 veiktsp\u0113ja bija lab\u0101ka.<\/p>\n
Sil\u012bcija karb\u012bda pla\u0161\u0101 joslas sprauga padara to piem\u0113rotu izmanto\u0161anai ier\u012bc\u0113s, kur\u0101m j\u0101darbojas augst\u0101k\u0101 temperat\u016br\u0101, tostarp saules fotoelektrisko elementu invertoru un visp\u0101r\u0113j\u0101s baro\u0161anas \u0137\u0113\u017eu konstrukcij\u0101s. Turkl\u0101t sil\u012bcija karb\u012bda \u0160otkija diodi var izmantot ar\u012b elektromobi\u013cu l\u0101d\u0113t\u0101jos, kas izmanto lielu jaudu augsttemperat\u016bras vid\u0113s.<\/p>\n
Sil\u012bcija karb\u012bda materi\u0101lu var le\u0123\u0113t n-tipa ar sl\u0101pekli vai fosforu un p-tipa ar alum\u012bniju, boru vai galliju, lai rad\u012btu pusvad\u012bt\u0101jus ar da\u017e\u0101d\u0101m elektriskaj\u0101m \u012bpa\u0161\u012bb\u0101m un samazin\u0101tu pretest\u012bbas zudumus, t\u0101d\u0113j\u0101di uzlabojot ier\u012b\u010du termisko veiktsp\u0113ju.<\/p>\n
Temperat\u016bras paaugstin\u0101\u0161an\u0101s diod\u0113s proporcion\u0101li palielina to pretest\u012bbu un siltuma izkliedes rezult\u0101t\u0101 tiek izklied\u0113ta jauda, t\u0101d\u0113j\u0101di palielinot ier\u012bces jaudas zudumus kopum\u0101. T\u0101p\u0113c, saglab\u0101jot diodes v\u0113sas, \u0161os kop\u0113jos jaudas zudumus var samazin\u0101t l\u012bdz minimumam.<\/p>\n
Sil\u012bcija karb\u012bds ir nep\u0101rprotama priek\u0161roc\u012bba sal\u012bdzin\u0101jum\u0101 ar tradicion\u0101lajiem pusvad\u012bt\u0101jiem, ja runa ir par augst\u0101ku darba temperat\u016bru, neradot termisk\u0101 izs\u012bkuma risku. \u0160\u012b \u012bpa\u0161\u012bba padara sil\u012bcija karb\u012bdu par pievilc\u012bgu risin\u0101jumu ra\u017eot\u0101jiem, kas rada energotaup\u012bgas ier\u012bces, piem\u0113ram, invertorus un l\u0101d\u0113t\u0101jus, kur temperat\u016bras kontrole ir \u013coti svar\u012bga.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) pirmo reizi komerci\u0101li pla\u0161i izmantots elektronik\u0101 1906. gad\u0101, kad to izmantoja k\u0101 detektoru krist\u0101la radioapar\u0101tos. Kop\u0161 t\u0101 laika to ra\u017eo sint\u0113tiski, bet dab\u0101 tas atrodams moisan\u012bta d\u0101rgakme\u0146os, k\u0101 ar\u012b meteor\u012btos, korunda atradn\u0113s un kimberl\u012bta atradn\u0113s.<\/p>\n
SiC ir ide\u0101li piem\u0113rots materi\u0101ls elektronikas lietojumiem, jo tam piem\u012bt zems tie\u0161\u0101 sprieguma kritums, \u0101trs atjauno\u0161an\u0101s laiks un augsts sadal\u012b\u0161an\u0101s spriegums. Zem\u0101ki ener\u0123ijas zudumi noz\u012bm\u0113 maz\u0101kas ier\u012bces, kuras ir viegl\u0101k integr\u0113t eso\u0161aj\u0101s konstrukcij\u0101s; apvienojum\u0101 ar augsto str\u0101vas bl\u012bvumu un siltumvad\u012btsp\u0113jas \u012bpa\u0161\u012bb\u0101m tas ir lieliska alternat\u012bva sil\u012bcija b\u0101zes ier\u012bc\u0113m augstas veiktsp\u0113jas lietojumiem.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide diodes have become increasingly popular across a range of circuit designs due to their higher performance levels and smaller form factor than silicon devices. WeEn’s SiC Schottky Barrier Diodes come in various packages ranging from leaded and bolt-on styles to surface mount SMD devices and are subject to extensive endurance testing to ensure […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-556","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts\/556","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/comments?post=556"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts\/556\/revisions"}],"predecessor-version":[{"id":557,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts\/556\/revisions\/557"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/media?parent=556"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/categories?post=556"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/tags?post=556"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}