Sil\u012bcija karb\u012bda \u0160otkija diodes (SCSD) ir pla\u0161as joslas spraugas pusvad\u012bt\u0101ju ier\u012bces, ko pla\u0161i izmanto energoelektronik\u0101. SCSD nodro\u0161ina augst\u0101ku veiktsp\u0113ju un liel\u0101ku energoefektivit\u0101ti sal\u012bdzin\u0101jum\u0101 ar parastaj\u0101m sil\u012bcija ier\u012bc\u0113m, un to kop\u0113j\u0101 ener\u0123ijas p\u0101rveido\u0161anas efektivit\u0101te ir lab\u0101ka nek\u0101 to sil\u012bcija analogiem.<\/p>\n
Galaxy Microelectronics 650 V un 1200 V SiC \u0160otkija diodes ir ide\u0101li piem\u0113rotas lietojumiem ar cietu p\u0101rsl\u0113g\u0161anos, pied\u0101v\u0101jot zem\u0101ku tie\u0161\u0101 sprieguma kritumu un \u0101tr\u0101ku atkop\u0161anos nek\u0101 sil\u012bcija mode\u013ci.<\/p>\n
Sil\u012bcija karb\u012bda (SiC) \u0160otkija diodes ir platjoslas pusvad\u012bt\u0101ju ier\u012bces, ko izmanto energoelektronik\u0101. To pielietojums cita starp\u0101 ietver elektriskos un hibr\u012bdautomobi\u013cus, saules baterijas, radiofrekven\u010du detektorus un taisngrie\u017eu sh\u0113mas. To galven\u0101s \u012bpa\u0161\u012bbas ir augsts caursprieguma spriegums, zems tie\u0161\u0101 sprieguma kritums un \u0101trs atjauno\u0161an\u0101s laiks; to darb\u012bba augst\u0101 temperat\u016br\u0101 \u013cauj ar\u012b palielin\u0101t p\u0101rsl\u0113g\u0161an\u0101s \u0101trumu, kas pal\u012bdz samazin\u0101t ener\u0123ijas zudumus un palielin\u0101t efektivit\u0101ti.<\/p>\n
SiC \u0160otkija barjeras diodes sast\u0101v no met\u0101la kontaktiem, kas izgatavoti no plat\u012bna (Pt) vai tit\u0101na (Ti), piestiprin\u0101ti pie n-veida SiC pusvad\u012bt\u0101ja materi\u0101la un savienoti ar met\u0101la vadiem - parasti no plat\u012bna (Pt) vai tit\u0101na (Ti). Met\u0101la kontakti veido efekt\u012bvu \u0160otkija barjeru, ierobe\u017eojot str\u0101vas pl\u016bsmu tikai vien\u0101 virzien\u0101; tas \u013cauj caur tiem pl\u016bst lielai str\u0101vas pl\u016bsmai, neradot zudumus - ide\u0101li piem\u0113rots augstas efektivit\u0101tes\/jaudas efekt\u012bv\u0101m ier\u012bc\u0113m.<\/p>\n
SiC \u0160otkija diod\u0113m k\u0101 platjoslas pusvad\u012bt\u0101jiem ir liel\u0101ki sadal\u012b\u0161an\u0101s elektriskie lauki nek\u0101 to sil\u012bcija (Si) analogiem, t\u0101p\u0113c t\u0101s ir piem\u0113rotas lietojumiem, kam nepiecie\u0161ama liela jauda un frekvence, piem\u0113ram, elektrisko transportl\u012bdzek\u013cu piedzi\u0146\u0101m, fotovoltaikas invertoriem un baro\u0161anas avotiem. Turkl\u0101t SiC diodes var lepoties gan ar liel\u0101kiem sadal\u012b\u0161an\u0101s elektriskajiem laukiem, gan maz\u0101ku iesl\u0113gt\u0101 st\u0101vok\u013ca pretest\u012bbu, sal\u012bdzinot ar to analogiem, kuru pamat\u0101 ir Si.<\/p>\n
Wolfspeed visaptvero\u0161\u0101s ra\u017eo\u0161anas iesp\u0113jas \u013cauj mums izgatavot SiC diodes, kas nodro\u0161ina izcilu veiktsp\u0113ju un ir gatavas integr\u0113\u0161anai energoelektronikas projektos. M\u016bsu pied\u0101v\u0101tais str\u0101vas nomin\u0101lv\u0113rt\u012bbu, sprieguma nomin\u0101lv\u0113rt\u012bbu un iepako\u0161anas iesp\u0113ju kl\u0101sts \u013cauj mums ra\u017eot diodes, kas \u012bpa\u0161i piel\u0101gotas katram lietojumam.<\/p>\n
Viena no liel\u0101kaj\u0101m sil\u012bcija karb\u012bda \u0161otkija diodes priek\u0161roc\u012bb\u0101m ir t\u0101s sp\u0113ja nodro\u0161in\u0101t zem\u0101ku tie\u0161\u0101 sprieguma kritumu nek\u0101 tradicion\u0101l\u0101s sil\u012bcija konstrukcijas, k\u0101 rezult\u0101t\u0101 tiek iz\u0161\u0137iests maz\u0101k ener\u0123ijas siltuma veid\u0101. Turkl\u0101t \u0161\u012b \u012bpa\u0161\u012bba nodro\u0161ina augst\u0101kas frekvences, kas uzlabo veiktsp\u0113ju un efektivit\u0101ti.<\/p>\n
Sil\u012bcija karb\u012bda diodes ir iesp\u0113jamas, pateicoties tam, ka t\u0101s ir \"vair\u0101kuma nes\u0113ju\" pusvad\u012bt\u0101ju ier\u012bces, kas noz\u012bm\u0113, ka norm\u0101l\u0101 re\u017e\u012bm\u0101 tikai n-tipa elektroni br\u012bvi p\u0101rvietojas p\u0101ri to savienojumam un savieno met\u0101la kontaktu. Tom\u0113r, ja tie ir revers\u0101 novirzien\u0101, ar\u012b p tipa elektroniem ir piek\u013cuve str\u0101vas pl\u016bsmai, un tas \u013cauj \u0101tr\u0101k p\u0101rtraukt str\u0101vas pl\u016bsmu nek\u0101 tradicion\u0101lajos p-n savienojuma taisngrie\u017ea taisngrie\u017ea taisngrie\u017ea taisngrie\u017ea taisngrie\u017eos.<\/p>\n
Sil\u012bcija karb\u012bda \u0161otaki ar lielu p\u0101rsl\u0113g\u0161an\u0101s \u0101trumu var iev\u0113rojami samazin\u0101t ener\u0123ijas zudumus elektronisko sh\u0113mu projekt\u0113\u0161an\u0101. Turkl\u0101t to maz\u0101ki magn\u0113tiskie un pas\u012bvie komponenti \u013cauj projekt\u0113t\u0101jiem samazin\u0101t kop\u0113jo izm\u0113ru, k\u0101 ar\u012b gal\u012bgo elektronisko sist\u0113mu ra\u017eo\u0161anas izmaksas.<\/p>\n
Sil\u012bcija karb\u012bda \u0161oti\u0146iem ir papildu priek\u0161roc\u012bba, jo tie nodro\u0161ina \u0101rk\u0101rt\u012bgi zemu nopl\u016bdes str\u0101vas l\u012bmeni, pateicoties \u012bpa\u0161i zemai pretest\u012bbai un liel\u0101kam sadal\u012b\u0161an\u0101s spriegumam. T\u0101d\u0113j\u0101di nopl\u016bdes str\u0101vas l\u012bmenis ir iev\u0113rojami samazin\u0101ts, sal\u012bdzinot ar tradicion\u0101laj\u0101m sil\u012bcija \u0161okol\u0101des diod\u0113m, pal\u012bdzot samazin\u0101t elektronisko konstrukciju izm\u0113ru, vienlaikus uzlabojot efektivit\u0101ti.<\/p>\n
Sil\u012bcija karb\u012bda \u0161otkija diodes nodro\u0161ina iev\u0113rojami augst\u0101ku maksim\u0101lo aizsardz\u012bbu pret reverso spriegumu nek\u0101 to sil\u012bcija analogi; da\u017eos gad\u012bjumos l\u012bdz pat vienam kilovoltam vai vair\u0101k atkar\u012bb\u0101 no konkr\u0113t\u0101s diodes. Nexperia SiC pied\u0101v\u0101 hibr\u012bdddiodes konstrukciju, ko sauc par \"apvienoto PiN Schottky\", kur\u0101 paral\u0113li ir ieb\u016bv\u0113tas gan sil\u012bcija karb\u012bda schottky, gan standarta P-N diodes, lai nodro\u0161in\u0101tu papildu aizsardz\u012bbu pret p\u0101rsprieguma spriegumu.<\/p>\n
Sil\u012bcija karb\u012bda \u0161otkija diodes var aptur\u0113t str\u0101vas pl\u016bsmu daudz \u0101tr\u0101k nek\u0101 to sil\u012bcija analogi, pateicoties da\u017eiem netrivi\u0101liem kvantu fizikas principiem. Ja \u0160otkija diode ir pret\u0113ji novirz\u012bta, t\u0101 darbojas l\u012bdz\u012bgi k\u0101 vienvirziena v\u0101rsts: kad elektroni pl\u016bst atpaka\u013c caur t\u0101s vad\u012btsp\u0113jas joslu un tiek strauji iepludin\u0101ti atpaka\u013c taj\u0101 un atkal atbr\u012bvoti br\u012bvai pl\u016bsmai, praktiski uzreiz apst\u0101dinot str\u0101vu. Tas iev\u0113rojami kontrast\u0113 ar standarta diod\u0113s notieko\u0161o nejau\u0161o rekombin\u0101ciju starp n un p nes\u0113jiem, kas notiek laika gait\u0101, sal\u012bdzinot ar l\u0113no nejau\u0161o rekombin\u0101ciju starp n un p tipa nes\u0113jiem standarta diod\u0113s, kas ilgst daudz ilg\u0101k.<\/p>\n
\u0100trs atjauno\u0161an\u0101s laiks padara \u0161o ier\u012bci piem\u0113rotu lietojumiem, kur nepiecie\u0161ama \u0101trdarb\u012bga p\u0101rsl\u0113g\u0161an\u0101s, un samazina slodzi uz citiem \u0137\u0113des komponentiem. Turkl\u0101t t\u0101s \u0101trais atjauno\u0161an\u0101s laiks \u013cauj samazin\u0101t kop\u0113jo ier\u012bces izm\u0113ru, vienlaikus nodro\u0161inot liel\u0101ku jaudas p\u0101rvadi katr\u0101 iepakojum\u0101.<\/p>\n
WeEn pied\u0101v\u0101 iespaid\u012bgu standarta un piel\u0101gotu sil\u012bcija karb\u012bda \u0160otkija diod\u0113m D2PAK, TO-247 un izol\u0113tajos TO-220AB\/AC iepakojumos, pied\u0101v\u0101jot nep\u0101rsp\u0113jamu revers\u0101 sprieguma kritumu, tie\u0161\u0101s str\u0101vas sp\u0113ju un temperat\u016bras koeficientu l\u012bdz pat 1200 V. Turkl\u0101t MPS (apvienot\u0101s PN Schottky) konstrukcij\u0101s tiek izmantota to dabisk\u0101 iztur\u012bba, lai nodro\u0161in\u0101tu zem\u0101ku nopl\u016bdes str\u0101vas l\u012bmeni un uzlabotu p\u0101rsprieguma sp\u0113jas.<\/p>\n
WeEn r\u016bp\u0113jas par kvalit\u0101ti un uzticam\u012bbu, par ko liecina m\u016bsu stingr\u0101s produktu test\u0113\u0161anas proced\u016bras. Piem\u0113ram, visas SiC diodes tiek pak\u013cautas 100% statisko parametru test\u0113\u0161anai, k\u0101 ar\u012b p\u0101rsprieguma str\u0101vas iztur\u012bbas test\u0113\u0161anai un lav\u012bnas sp\u0113jas nov\u0113rt\u0113\u0161anai, lai garant\u0113tu, ka m\u016bsu klienti sa\u0146em maksim\u0101lu veiktsp\u0113ju no saviem diod\u0113m.<\/p>\n
Sil\u012bcija karb\u012bda \u0160otkija diod\u0113m ir zema nopl\u016bdes str\u0101va pat tad, ja t\u0101s ir apgriezti novirz\u012btas. Tas \u013cauj maz\u0101k\u0101m diod\u0113m nodro\u0161in\u0101t liel\u0101kus izejas r\u0101d\u012bt\u0101jus, vienlaikus samazinot sh\u0113mas plates izm\u0113rus un svaru.<\/p>\n
Zema nopl\u016bdes str\u0101va ir \u013coti svar\u012bga ar\u012b tad, ja tos izmanto lietojumos, kur nepiecie\u0161ams liels p\u0101rsl\u0113g\u0161an\u0101s \u0101trums, piem\u0113ram, buck boost p\u0101rveidot\u0101jos vai citos komut\u0113jamos baro\u0161anas avotos. \u0160aj\u0101 gad\u012bjum\u0101 diod\u0113m ir \u0101tri j\u0101iesl\u0113dzas un j\u0101izsl\u0113dzas, nezaud\u0113jot ener\u0123iju komut\u0101cijas ciklu laik\u0101, t\u0101p\u0113c \u0161\u012bs ier\u012bces ir ide\u0101li piem\u0113rotas \u0101trgaitas komut\u0101cijas lietojumiem, piem\u0113ram, komut\u0101cijas baro\u0161anas avotos.<\/p>\n
SiC \u0161otkija diod\u0113m ir \u0161auras izsmel\u0161anas zonas, kas mazina paraz\u012btiskos efektus, piem\u0113ram, zvanu un citus kapacitat\u012bvos trok\u0161\u0146us, t\u0101p\u0113c t\u0101s ir \u012bpa\u0161i piem\u0113rotas izmanto\u0161anai RF jaudas lietojumos.<\/p>\n
SiC diodes tiek veidotas, izmantojot epitaksisk\u0101s aug\u0161anas un vafe\u013cu savieno\u0161anas metodes, s\u0101kot ar pl\u0101nu met\u0101la sl\u0101ni, kas savienots ar N tipa le\u0123\u0113to pusvad\u012bt\u0101ju (M-S savienojums), pirms \u0161o sl\u0101\u0146u apvieno\u0161anas, veidojot \u0160otkija barjeru, kas dod \u0161\u0101 tipa diod\u0113m nosaukumu.<\/p>\n
Pateicoties pusvad\u012bt\u0101ju materi\u0101lam ar pla\u0161u joslas spraugu, \u0161\u012bm diod\u0113m ir daudz liel\u0101ks str\u0101vas bl\u012bvums, sal\u012bdzinot ar standarta P-N diod\u0113m, un t\u0101p\u0113c t\u0101s var apstr\u0101d\u0101t daudz liel\u0101ku str\u0101vu, nesamazinot energoefektivit\u0101ti sal\u012bdzin\u0101jum\u0101 ar to sil\u012bcija analogiem.<\/p>\n
Pateicoties to pla\u0161ajam darb\u012bbas temperat\u016bras diapazonam un augstsprieguma sadal\u012b\u0161an\u0101s sp\u0113j\u0101m, \u0161\u012bs ier\u012bces strauji iekaro popularit\u0101ti da\u017e\u0101d\u0101s elektronisk\u0101s konstrukcijas lietojumprogramm\u0101s, piem\u0113ram, buck-boost p\u0101rveidot\u0101jos, saules fotoelementu inverteros, elektrisko transportl\u012bdzek\u013cu l\u0101d\u0113t\u0101jos un citos augstsprieguma baro\u0161anas avotos.<\/p>\n
T\u0101 k\u0101 platjoslas pusvad\u012bt\u0101ji darbojas augst\u0101s temperat\u016br\u0101s, lai nodro\u0161in\u0101tu to stabilit\u0101ti, tiem j\u0101veic pla\u0161as uzticam\u012bbas p\u0101rbaudes. \u0160\u012b test\u0113\u0161ana ietver 100% statisko parametru test\u0113\u0161anu, 100% p\u0101rsprieguma str\u0101vas iztur\u012bbas test\u0113\u0161anu (IFSM) un 100% lav\u012bnas sp\u0113jas test\u0113\u0161anu (UIS). Uz\u0146\u0113mums WeEn ir izveidojis visaptvero\u0161as kvalit\u0101tes un uzticam\u012bbas kontroles sist\u0113mas, kas \u013cauj mums ra\u017eot vienus no visaugst\u0101k\u0101s kvalit\u0101tes str\u0101vas pusvad\u012bt\u0101jus, kas pa\u0161laik ir pieejami tirg\u016b.<\/p>\n
Sil\u012bcija karb\u012bda \u0160otkija diod\u0113m ir unik\u0101la sp\u0113ja darboties augst\u0101k\u0101 temperat\u016br\u0101 nek\u0101 to sil\u012bcija analogiem, vienlaikus saglab\u0101jot augstu veiktsp\u0113jas l\u012bmeni. Tas ir pateicoties sil\u012bcija karb\u012bdam piem\u012bto\u0161ajai iztur\u012bbai, kas pal\u012bdz efekt\u012bv\u0101k vad\u012bt str\u0101vu, t\u0101d\u0113j\u0101di samazinot siltuma veido\u0161anos ier\u012bc\u0113, kas cit\u0101di var\u0113tu izrais\u012bt negaid\u012btu pretest\u012bbas palielin\u0101\u0161anos vai termisko izs\u012bk\u0161anu.<\/p>\n
SiC \u0161otkija barjer\u0101m piem\u012bt pla\u0161a joslas spraugas pusvad\u012bt\u0101ju raksturlielumi, kas \u013cauj t\u0101m nodro\u0161in\u0101t zem\u0101ku iesl\u0113g\u0161an\u0101s spriegumu nek\u0101 to PN savienojuma analogiem, nodro\u0161inot \u0101tr\u0101ku iesl\u0113g\u0161an\u0101s\/izsl\u0113g\u0161an\u0101s ciklu un t\u0101d\u0113j\u0101di palielinot komut\u0101cijas \u0101trumu elektroniskaj\u0101s sh\u0113m\u0101s. \u0160\u012b \u012bpa\u0161\u012bba var pal\u012bdz\u0113t samazin\u0101t ener\u0123ijas zudumus, vienlaikus \u013caujot sh\u0113m\u0101s izmantot maz\u0101kus magn\u0113tiskos un pas\u012bvos komponentus.<\/p>\n
Sil\u012bcija karb\u012bda \u0161otkija diodes var lepoties ar zem\u0101ku iesl\u0113g\u0161an\u0101s spriegumu un tie\u0161\u0101 sprieguma kritumu nek\u0101 to sil\u012bcija ekvivalenti, jo pla\u0161a joslas spraugas pusvad\u012bt\u0101ju materi\u0101li nodro\u0161ina efekt\u012bv\u0101ku vad\u012btsp\u0113ju, t\u0101d\u0113j\u0101di samazinot sprieguma kritumu p\u0101ri barjer\u0101m.<\/p>\n
Nexperia sil\u012bcija karb\u012bda \u0160otkija diod\u0113m ar ierakto re\u017e\u0123i ir iek\u0161\u0113ja paraz\u012btiska p-n diode, kas nov\u0113r\u0161 termisko izs\u012bk\u0161anu un nodro\u0161ina daudz \u0101tr\u0101ku atjauno\u0161an\u0101s laiku nek\u0101 parast\u0101s sil\u012bcija diodes. \u0160\u012b diode darbojas k\u0101 izklied\u0113ta balans\u0113\u0161anas pretest\u012bba, lai izklied\u0113tu str\u0101vas slodzi pla\u0161\u0101k\u0101 apgabal\u0101 un izvair\u012btos no lokaliz\u0113tiem termisk\u0101s sabruk\u0161anas gad\u012bjumiem.<\/p>\n
Alter Technology ir izstr\u0101d\u0101jusi herm\u0113tiski met\u0101lkeramik\u0101 iepakotu sil\u012bcija karb\u012bda diodu l\u012bniju, kas paredz\u0113ta lietojumiem jaudas telp\u0101s, ar savienojuma temperat\u016bru l\u012bdz -170oC\/280oC un izcilu ilgtermi\u0146a stabilit\u0101ti un revers\u0101s nopl\u016bdes raksturlielumiem \u0161\u0101dos ekstr\u0113mos apst\u0101k\u013cos. \u0160\u012bs ier\u012bces var atrast lietojumos, kur nepiecie\u0161ama augsta efektivit\u0101te\/uzticam\u012bba, piem\u0113ram, gr\u016bti p\u0101rsl\u0113dzamos baro\u0161anas avotos vai saules bateriju bloku aizsardz\u012bbas diod\u0113s.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon Carbide Schottky Diodes (SCSDs) are wide band gap semiconductor devices widely employed in power electronics. Offering higher performance and more energy-efficiency compared to conventional silicon devices, SCSDs provide better overall power conversion efficiency than their silicon counterparts. Galaxy Microelectronics’ 650V and 1200 V SiC Schottky diodes are perfect for hard-switching applications, offering lower forward […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-430","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts\/430","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/comments?post=430"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts\/430\/revisions"}],"predecessor-version":[{"id":431,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts\/430\/revisions\/431"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/media?parent=430"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/categories?post=430"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/tags?post=430"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}