{"id":395,"date":"2024-05-12T22:08:49","date_gmt":"2024-05-12T14:08:49","guid":{"rendered":"https:\/\/ceramicatijolart.com\/?p=395"},"modified":"2024-05-12T22:08:49","modified_gmt":"2024-05-12T14:08:49","slug":"plasas-joslas-spraugas-pusvaditaji","status":"publish","type":"post","link":"https:\/\/ceramicatijolart.com\/lv\/plasas-joslas-spraugas-pusvaditaji\/","title":{"rendered":"Pla\u0161as joslas spraugas pusvad\u012bt\u0101ji"},"content":{"rendered":"<p>Joslu spraugas m\u0113ra ener\u0123iju, kas nepiecie\u0161ama elektroniem un caurumiem, lai p\u0101rvietotos no attiec\u012bgaj\u0101m valences josl\u0101m uz vad\u012btsp\u0113jas josl\u0101m jeb vad\u012btsp\u0113jas josl\u0101m. Pusvad\u012bt\u0101jiem ar pla\u0161\u0101k\u0101m joslu atstarp\u0113m, piem\u0113ram, gallija nitr\u012bdam (GaN) vai sil\u012bcija karb\u012bdam (SiC), ir iev\u0113rojami liel\u0101kas joslu atstarpes nek\u0101 standarta sil\u012bcijam, t\u0101p\u0113c \u0161ie materi\u0101li ir piem\u0113roti augstsprieguma\/frekven\u010du lietojumiem.<\/p>\n<h2>1. Pla\u0161a joslas sprauga<\/h2>\n<p>Sil\u012bcija karb\u012bds apvieno lab\u0101k\u0101s gan pusvad\u012bt\u0101ju, gan izolatoru \u012bpa\u0161\u012bbas, veidojot \u0101rk\u0101rt\u012bgi univers\u0101lu da\u017e\u0101du elektronisko ier\u012b\u010du b\u016bvmateri\u0101lu. Viena no t\u0101 rakstur\u012bg\u0101kaj\u0101m \u012bpa\u0161\u012bb\u0101m ir pla\u0161a joslas sprauga, kas \u013cauj sasniegt daudz augst\u0101ku spriegumu un temperat\u016bru nek\u0101 tradicion\u0101lajiem pusvad\u012bt\u0101ju materi\u0101liem, piem\u0113ram, sil\u012bcijam. Platjoslas pusvad\u012bt\u0101ji tuv\u0101kajos gados var b\u016btiski p\u0101rveidot gan elektronikas, gan energoapg\u0101des nozari.<\/p>\n<p>Pusvad\u012bt\u0101ja joslas sprauga ir ener\u0123ijas starp\u012bba starp valences un vad\u012btsp\u0113jas josl\u0101m. Palielinoties ener\u0123ijas starp\u012bbai, elektroni var viegl\u0101k p\u0101rvietoties starp \u0161\u012bm josl\u0101m un viegl\u0101k vad\u012bt elektr\u012bbu. Tradicion\u0101lajiem pusvad\u012bt\u0101jiem, piem\u0113ram, sil\u012bcijam, joslu atstarpes ir no 1 l\u012bdz 1,5 eV, bet platjoslas pusvad\u012bt\u0101jiem, piem\u0113ram, gallija nitr\u012bdam (GaN) un sil\u012bcija karb\u012bdam (SiC), joslu atstarpes ir no 2,3 l\u012bdz 3,3 eV.<\/p>\n<p>Platjoslas pusvad\u012bt\u0101ju priek\u0161roc\u012bbas sal\u012bdzin\u0101jum\u0101 ar sil\u012bcija pusvad\u012bt\u0101jiem ir vair\u0101kas, tostarp to sp\u0113ja iztur\u0113t augst\u0101ku darba temperat\u016bru un p\u0101rr\u0101vuma spriegumu, t\u0101p\u0113c tie ir piem\u0113roti izmanto\u0161anai baro\u0161anas avotos, kur tie var samazin\u0101t ener\u0123ijas zudumus, vienlaikus palielinot efektivit\u0101ti un samazinot lietder\u012bbas zudumus. Turkl\u0101t platjoslas pusvad\u012bt\u0101ji var lepoties ar augstu siltumvad\u012btsp\u0113ju, kas \u013cauj \u0101tr\u0101k izklied\u0113t ier\u012b\u010du rad\u012bto siltumu.<\/p>\n<p>Platjoslas pusvad\u012bt\u0101jiem piem\u012bt izcilas optoelektronisk\u0101s \u012bpa\u0161\u012bbas, un tos var viegli regul\u0113t, t\u0101p\u0113c tie ir piem\u0113roti izmanto\u0161anai gaismas diod\u0113s (LED), kas rada pla\u0161u redzamo vi\u013c\u0146u garumu spektru, radot vair\u0101k gaismas uz vatu un samazinot ener\u0123ijas pat\u0113ri\u0146u un ietekmi uz vidi.<\/p>\n<h2>2. Augsts sadal\u012bjuma lauks<\/h2>\n<p>Silicija karb\u012bda pla\u0161\u0101 joslu sprauga nodro\u0161ina pietiekamu ener\u0123ijas daudzumu elektroniem, lai tie var\u0113tu p\u0101rvietoties p\u0101ri pusvad\u012bt\u0101ja strukt\u016brai, t\u0101d\u0113j\u0101di \u013caujot tiem darboties augst\u0101k\u0101s temperat\u016br\u0101s, pie augst\u0101kiem spriegumiem un frekvenc\u0113s nek\u0101 ier\u012bc\u0113m, kas izgatavotas, izmantojot citus pusvad\u012bt\u0101ju materi\u0101lus, piem\u0113ram, gallija arsen\u012bdu vai standarta sil\u012bciju. Turkl\u0101t t\u0101 augstais sadal\u012b\u0161an\u0101s elektrisk\u0101 lauka stiprums \u013cauj samazin\u0101t ier\u012bces izm\u0113rus un pa\u0101trin\u0101t p\u0101rsl\u0113g\u0161an\u0101s \u0101trumu.<\/p>\n<p>Sil\u012bcija karb\u012bds izce\u013cas starp l\u012bdz\u012bg\u0101m viel\u0101m ne tikai ar sp\u0113c\u012bgu joslas spraugu un sadal\u012b\u0161an\u0101s iztur\u012bbu, bet ar\u012b ar augstu pies\u0101tin\u0101to elektronu \u0101truma maksim\u0101lo \u0101trumu, kas samazina ier\u012bces nopl\u016bdes str\u0101vu, vienlaikus uzlabojot elektronisko ier\u012b\u010du efektivit\u0101ti.<\/p>\n<p>Sil\u012bcija karb\u012bds sal\u012bdzin\u0101jum\u0101 ar citiem pusvad\u012bt\u0101ju materi\u0101liem nodro\u0161ina iev\u0113rojamas pretest\u012bbas priek\u0161roc\u012bbas, \u013caujot ier\u012bces mont\u0113t uz maz\u0101kiem substr\u0101tiem, lai ietaup\u012btu vietu un svaru. Turkl\u0101t t\u0101 lielisk\u0101 siltumvad\u012btsp\u0113ja \u013cauj \u0101tri izvad\u012bt siltumu no pusvad\u012bt\u0101ja, un \u0161\u012b \u012bpa\u0161\u012bba padara sil\u012bcija karb\u012bdu \u012bpa\u0161i piem\u0113rotu lielas jaudas lietojumiem.<\/p>\n<p>Sil\u012bcija karb\u012bda augstais sadal\u012b\u0161an\u0101s lauks ir saist\u012bts ar t\u0101 pla\u0161\u0101ko joslas spraugu, kam nepiecie\u0161ams liel\u0101ks elektriskais lauks, lai trieciena rezult\u0101t\u0101 rad\u012btu nes\u0113jus, kas izraisa liel\u0101ku pies\u0101tin\u0101juma elektronu \u0101trumu un t\u0101d\u0113j\u0101di liel\u0101ku pies\u0101tin\u0101juma elektronu \u0101trumu; rezult\u0101t\u0101 sil\u012bcija karb\u012bda iztur\u012bbas spriegums ir aptuveni piecas reizes liel\u0101ks nek\u0101 standarta sil\u012bcija.<\/p>\n<p>2D sil\u012bcija karb\u012bdam (parasti sauktam par SixCy) ir daudz piel\u0101gojamu \u012bpa\u0161\u012bbu, tostarp tie\u0161\u0101 joslas sprauga un optisk\u0101s absorbcijas \u012bpa\u0161\u012bbas. Lai regul\u0113tu joslas strukt\u016bru, vienk\u0101r\u0161i mainiet t\u0101s sast\u0101vu, pamatojoties uz Si\/C sast\u0101vu, meh\u0101nisko deform\u0101ciju un defektiem, kas ir t\u0101s materi\u0101la sast\u0101v\u0101.<\/p>\n<p>Sil\u012bcija karb\u012bds izce\u013cas starp augstas temperat\u016bras materi\u0101liem, pateicoties t\u0101 izcilaj\u0101m termiskaj\u0101m un elektriskaj\u0101m \u012bpa\u0161\u012bb\u0101m, kas padara to par lielisku materi\u0101lu izv\u0113li. Sil\u012bcija karb\u012bdam, kas darbojas 1700 l\u012bdz 1800 gr\u0101du temperat\u016br\u0101, ir lieliska iztur\u012bba pret radi\u0101cijas iedarb\u012bbu un \u0137\u012bmisko koroziju, k\u0101 ar\u012b augsts jaudas bl\u012bvums un komut\u0101cijas \u0101trums, kas nodro\u0161ina vair\u0101ku sh\u0113mas elementu darb\u012bbu vien\u0101 iepakojum\u0101.<\/p>\n<h2>3. Augsta siltuma vad\u012btsp\u0113ja<\/h2>\n<p>Silikons tiek uzskat\u012bts par galveno pusvad\u012bt\u0101ju materi\u0101lu elektronik\u0101, tom\u0113r s\u0101k par\u0101d\u012bties t\u0101 ierobe\u017eojumi, jo \u012bpa\u0161i lieljaudas lietojumos. T\u0101 k\u0101 sil\u012bcija joslas sprauga ir zema - tikai 1,2eV, tad, sal\u012bdzinot ar citiem materi\u0101liem, sil\u012bcija vad\u012btsp\u0113jai nepiecie\u0161ams vair\u0101k ener\u0123ijas; no otras puses, sil\u012bcija karb\u012bdam ir daudz liel\u0101ka joslas sprauga - 3,26eV, kas \u013cauj tam iztur\u0113t gandr\u012bz desmit reizes vair\u0101k elektrisko lauku nek\u0101 t\u0101 sil\u012bcija kol\u0113\u0123im.<\/p>\n<p>Sil\u012bcija karb\u012bds var lepoties ar lielisku siltumvad\u012btsp\u0113ju, pateicoties t\u0101 unik\u0101lajai atomu strukt\u016brai: lai gan sil\u012bcija masas sil\u012bcijam ir tetragon\u0101l\u0101s sp3 saites, viensl\u0101\u0146a SiC sl\u0101\u0146iem ir plakanu sp2 saites, un t\u0101p\u0113c tiem ir \u012bs\u0101ki starpsl\u0101\u0146a att\u0101lumi nek\u0101 sil\u012bcija masai, kas atvieglo elektronu migr\u0101ciju no valences joslas uz vad\u012btsp\u0113jas joslu.<\/p>\n<p>Sil\u012bcija karb\u012bda liel\u0101 joslas sprauga un temperat\u016bras un sprieguma tolerance padara to par lielisku materi\u0101lu jaudas pusvad\u012bt\u0101ju ier\u012bc\u0113m.<\/p>\n<p>SiC siltumvad\u012btsp\u0113ja ar\u012b palielin\u0101s, pieaugot sl\u0101\u0146u skaitam, jo notiek p\u0101reja no tie\u0161\u0101s joslas spraugas uz netie\u0161o joslas spraugu strukt\u016bru, l\u012bdz\u012bgi k\u0101 MoS2 un citu TMD; tom\u0113r l\u012bdz \u0161im tika zi\u0146ots tikai par viensl\u0101\u0146u 3C-SiC ar augstu siltumvad\u012btsp\u0113ju teor\u0113tisk\u0101 l\u012bmen\u012b.<\/p>\n<p>Osakas Metropolit\u0113na universit\u0101tes In\u017eenierzin\u0101t\u0146u augstskolas p\u0113tnieki ir ieg\u0101ju\u0161i v\u0113stur\u0113, teor\u0113tisk\u0101 l\u012bmen\u012b veiksm\u012bgi radot br\u012bvi st\u0101vo\u0161us 3C-SiC krist\u0101lus un SiC pl\u0101n\u0101s pl\u0113ves uz Si substr\u0101tiem ar augstu siltumvad\u012btsp\u0113ju. Izmantojot da\u017e\u0101das atom\u0101r\u0101 l\u012bme\u0146a anal\u012bzes metodes, vi\u0146i identific\u0113ja sl\u0113pt\u0101s sakar\u012bbas starp faktoriem, kas ietekm\u0113 LPS-SiC siltumvad\u012btsp\u0113ju.<\/p>\n<h2>4. Augstas temperat\u016bras stabilit\u0101te<\/h2>\n<p>Sil\u012bcija karb\u012bds (SiC) ir \u0101rk\u0101rt\u012bgi iztur\u012bgs materi\u0101ls apk\u0101rt\u0113j\u0101s vides apst\u0101k\u013cos. Tas ir ugunsiztur\u012bgs pusvad\u012bt\u0101js, kas sast\u0101v no Si4C tetraedriem, kuri atkar\u012bb\u0101 no sak\u0101rtojuma sec\u012bbas sak\u0101rtoti kubisk\u0101s, heksagon\u0101l\u0101s vai rombisk\u0101s krist\u0101lisk\u0101s strukt\u016br\u0101s. SiC ir viens no termodinamiski visstabil\u0101kajiem zin\u0101majiem krist\u0101liskajiem materi\u0101liem, kas iev\u0113rojami deform\u0113jas tikai ekstrem\u0101li augsta spiediena apst\u0101k\u013cos, jo oglek\u013ca atomi saglab\u0101 savas p-konjug\u0113t\u0101s orbit\u0101les un sp2 sai\u0161u strukt\u016bru krist\u0101liskaj\u0101s strukt\u016br\u0101s.<\/p>\n<p>SiC joproj\u0101m ir viens no gr\u016bt\u0101k sintez\u0113jamiem materi\u0101liem, un ir veikti daudzi p\u0113t\u012bjumi par t\u0101 meh\u0101niskaj\u0101m \u012bpa\u0161\u012bb\u0101m da\u017e\u0101dos apst\u0101k\u013cos. Atomu sakopojums nosaka iztur\u012bbu; viensl\u0101\u0146u SiC ir visstipr\u0101k\u0101 forma. Diem\u017e\u0113l t\u0101 trauslums padara to par vienu no divdimensiju materi\u0101liem, ko ir gr\u016bt\u0101k eksfoli\u0113t.<\/p>\n<p>2D SiC var lepoties ar iev\u0113rojam\u0101m neline\u0101raj\u0101m optiskaj\u0101m \u012bpa\u0161\u012bb\u0101m, pateicoties t\u0101 unik\u0101lajai atomu strukt\u016brai. P\u0113t\u012bjumos ir pier\u0101d\u012bts sp\u0113c\u012bgs otr\u0101s harmonikas \u0123ener\u0113\u0161anas spektrs, kas ir b\u016btisks nanom\u0113roga neline\u0101r\u0101s frekvences p\u0101rveido\u0161anas ier\u012bc\u0113s, ko, iesp\u0113jams, izraisa sil\u012bcija un oglek\u013ca atomu eksitonisk\u0101 mijiedarb\u012bba t\u0101 molekul\u0101s.<\/p>\n<p>2D SiC izce\u013cas k\u0101 pievilc\u012bgs materi\u0101ls optoelektronikas lietojumiem, piem\u0113ram, LED un l\u0101zeriem, pateicoties t\u0101 unik\u0101laj\u0101m \u012bpa\u0161\u012bb\u0101m. Tam ir noska\u0146ojama joslas sprauga, ko var kontrol\u0113t, mainot Si\/C kaudzes sast\u0101vu un meh\u0101nisko deform\u0101ciju, kas \u013cauj ra\u017eot\u0101jiem ra\u017eot gaismas izstarojo\u0161as ier\u012bces, kas aptver visu redzamo spektru. Turkl\u0101t t\u0101 zemais termisk\u0101s izple\u0161an\u0101s koeficients, ciet\u012bba un stingr\u012bba padara to par piem\u0113rotu materi\u0101lu ar\u012b astronomisko teleskopu spogu\u013ciem.<\/p>\n<h2>5. Lieliska elektrovad\u012btsp\u0113ja<\/h2>\n<p>Sil\u012bcija karb\u012bda substr\u0101ti sp\u0113j iztur\u0113t elektriskos laukus, kas ir desmit reizes liel\u0101ki nek\u0101 sil\u012bcija, un tiem ir zem\u0101ka pretest\u012bba, kas noz\u012bm\u0113, ka lieljaudas lietojumiem ir iesp\u0113jams izmantot maz\u0101kas vad\u012bbas sh\u0113mas, nodro\u0161inot jaudas p\u0101rveidot\u0101jus ar maz\u0101kiem ener\u0123ijas zudumiem un augst\u0101ku efektivit\u0101ti. T\u0101p\u0113c \u0161o sl\u0113dzi ir v\u0113rts izmantot jebkur\u0101 lieljaudas lietojum\u0101!<\/p>\n<p>Sil\u012bcija karb\u012bds nodro\u0161ina lielu elektrovad\u012btsp\u0113ju, jo t\u0101 joslas sprauga ir pla\u0161\u0101ka nek\u0101 sil\u012bcijam, kas dod elektroniem vair\u0101k ener\u0123ijas p\u0101rejai no valences joslas uz vad\u012btsp\u0113jas joslu, k\u0101 rezult\u0101t\u0101 samazin\u0101s elektrisk\u0101 pretest\u012bba un palielin\u0101s p\u0101rsl\u0113g\u0161an\u0101s \u0101trums.<\/p>\n<p>Sil\u012bcija karb\u012bda zem\u0101ka temperat\u016bras tolerance sal\u012bdzin\u0101jum\u0101 ar daudziem citiem pusvad\u012bt\u0101ju materi\u0101liem ir v\u0113l viena priek\u0161roc\u012bba, kas pal\u012bdz uzlabot veiktsp\u0113ju, un t\u0101 \u0101trais revers\u0101s atjauno\u0161an\u0101s laiks padara to \u012bpa\u0161i piem\u0113rotu lietojumiem, kam nepiecie\u0161ams \u0101trs reakcijas laiks.<\/p>\n<p>Sil\u012bcija karb\u012bds pied\u0101v\u0101 iespaid\u012bgu neline\u0101ro optisko \u012bpa\u0161\u012bbu spektru, kas var pal\u012bdz\u0113t uzlabot frekvences p\u0101rveido\u0161anas ier\u012bces. To prec\u012bzas \u012bpa\u0161\u012bbas ir atkar\u012bgas no t\u0101diem faktoriem k\u0101 Si un C atomu attiec\u012bba katr\u0101 sl\u0101n\u012b, k\u0101 ar\u012b strukt\u016bra un defektu sadal\u012bjums materi\u0101l\u0101.<\/p>\n<p>Sil\u012bcija karb\u012bdam ir daudzas kop\u012bgas \u012bpa\u0161\u012bbas ar citiem divdimensiju materi\u0101liem, piem\u0113ram, graf\u0113nu un h-BN, tom\u0113r viensl\u0101\u0146u sil\u012bcija karb\u012bds izce\u013cas ar da\u017e\u0101m unik\u0101l\u0101m \u012bpa\u0161\u012bb\u0101m, kuras nav atrodamas citur. Jo \u012bpa\u0161i tam ir stabila plakana strukt\u016bra k\u0101 tie\u0161\u0101s joslas spraugas materi\u0101lam, turkl\u0101t tam ir augst\u0101ka elektronu kust\u012bba nek\u0101 h-BN vai melnajam fosforam, kas padara to par pievilc\u012bgu kandid\u0101tu n\u0101kotnes elektroniskajiem lietojumiem.<\/p>","protected":false},"excerpt":{"rendered":"<p>Band gaps measure the energy required for electrons and holes to move from their respective valence bands into conduction bands, or conduction bands. Semiconductors with wider band gaps such as Gallium Nitride (GaN) or Silicon Carbide (SiC) possess significantly larger band gaps than standard silicon, making these materials suitable for high voltage\/frequency applications. 1. Wide [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-395","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts\/395","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/comments?post=395"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts\/395\/revisions"}],"predecessor-version":[{"id":396,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/posts\/395\/revisions\/396"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/media?parent=395"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/categories?post=395"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/lv\/wp-json\/wp\/v2\/tags?post=395"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}