Autora vārds: admin88

Silicon carbide is an abrasive material commonly found in grinding wheels, sanding belts and blast media. As an inorganic chemical compound it competes with diamond and boron carbide in terms of hardness. Black silicon carbide (Carborundum) is one of the most commonly used abrasives, featuring hard and angular grains that make for effective processing of […]

Silicon carbide (SiC) possesses an unusual crystal structure. It contains four Si and four C atoms in an ordered coordination tetrahedral arrangement with layers stacked into polytypes forming its primary coordination tetrahedron. Electrically, silicon carbide has the ability to withstand voltages five-ten times higher than silicon. This makes it an excellent material choice for power

Technology advances are once-in-a-generation events for semiconductor businesses, and those that accept them stand to reap enormous profits. Cree, now Wolfspeed, stands to benefit from the trend towards silicon carbide power devices. Their innovations in device design and production allow them to manufacture smaller chips with equal power ratings on each wafer – thus expanding

Okamoto et al. measured the conductivity of silicon carbide at various temperatures and found that small amounts of Si additive did not increase conductivity by two to three orders of magnitude, but exceeding 5 mol% caused conductivity levels to soar by up to three orders of magnitude. Silicon carbide is a semiconductor material, capable of

Amorphous silicon carbide (a-SiC) has gained immense attention due to its variable optical and electronic properties. As it features rigidity, low thermal expansion rates, and visible light transparency it makes an attractive material for telescope mirrors. Material science is experiencing a revolution with the introduction of this novel material: a-SiC. With properties combining strength with

4H-SiC is an increasingly popular polytype of silicon carbide. Due to its wide bandgap and excellent thermal, electrical, and mechanical properties, it makes an ideal material for power electronics applications. We investigated the elastic deformation and cracking behavior of a single crystal 4H-SiC pillar specimen with [0001] orientation by performing four times loading-unloading compression strain

Silicon carbide whiskers, single-crystal micron-sized particles with outstanding physical and chemical properties, have garnered significant research interest due to their wide-ranging applications across many fields including high temperature structural materials and tool ceramics. Mullite ceramic is a highly chemically stable refractory material with superior mechanical and physical properties such as high hardness and temperature creep

Silīcija karbīda invertoru tehnoloģija ir aizraujošs enerģijas pusvadītāju progress. Tā var lepoties ar vairākām priekšrocībām salīdzinājumā ar parastajām silīcija ierīcēm, tostarp līdz pat desmit reizes mazākiem jaudas zudumiem un uzlabotām termiskajām īpašībām. McLaren Applied izmanto augstsprieguma CoolSiC metāla oksīda pusvadītāju lauka tranzistoru (MOSFET), kas īpaši izstrādāts, lai darbotos ar augstsprieguma 800 voltu sistēmām, kuras atrodamas elektriskajās sistēmās.

Silīcija karbīds, ko biežāk dēvē par karborundu, ir ārkārtīgi ciets sintētisks kristālisks savienojums, kas sastāv no silīcija un oglekļa un kam raksturīga augsta siltumvadītspēja, zems izplešanās koeficients, izturība pret ķīmiskām reakcijām un pusvadītāja īpašības. Dabā tā dabiskais ekvivalents moizanīts ir sastopams kā minerāls, bet tikai ļoti ierobežotā daudzumā.

Silīcija karbīds (SiC) spēj izturēt elektrisko transportlīdzekļu enerģijas sistēmu augstsprieguma prasības. Wolfspeed piedāvā izolācijas risinājumus, kas īpaši izstrādāti, lai atbalstītu SiC konstrukcijas vilces vadības invertoriem. Silīcija karbīda tirgus izaugsme Automobiļu rūpniecības izaugsme veicina silīcija karbīda tirgus izaugsmi, savukārt tā augsta temperatūras izturība veicina pieprasījumu ugunsizturīgajā nozarē. Automobiļu nozare