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Silicon carbide is an extremely reliable wide band-gap semiconductor material. This allows devices made of it to operate at higher voltages, frequencies, and temperatures than conventional silicon devices. Monolayer SiC could be the catalyst to revolutionary advances in high-temperature electronics and power devices. It offers unmatched optical, mechanical, chemical and magnetic properties for unrivaled functionality […]

Amorphous silicon carbide (a-SiC) boasts impressive mechanical and strength properties that could revolutionize various industries. Its yield strength surpasses that of well-known materials like Kevlar, making it suitable for applications including microchip sensors and advanced solar cells. a-SiC stands out from its competition due to its superior tensile strength and versatility, being capable of fabrication

Coherent of Saxonburg, PA announced on April 8 that Japanese auto suppliers DENSO and Mitsubishi Electric have invested $1 billion into its silicon carbide business, holding a 12.5% non-controlling stake in a newly established subsidiary that will operate the business under Sohail Khan, Executive VP of New Ventures and Wide Bandgap Electronics Technology at Coherent.

Silicon carbide (SiC) is an amazing material with remarkable strength and resilience. Able to endure high temperatures, harsh chemicals and corrosion resistance – these characteristics make SiC an unparalleled material. When selecting a silicon carbide tube for your project, several elements need to be taken into account such as temperature, pressure, corrosion-prone environment and size/shape.

Silicon carbide power devices play an integral part in improving energy efficiency of electric vehicles due to their excellent material properties. Silicon carbide in its pure form behaves as an insulator; however, when doped with impurities (dopants), it can transform into an electronic semiconductor. Dopants for this use include nitrogen or phosphorous doping for n-type

Silicon Carbide (SiC) ceramic products are well known for their resistance to corrosion, abrasion and high temperatures – qualities which also make them long-term refractory materials for burner nozzles, jet and flame tubes. SiC is an ideal material, maintaining its strength even at temperatures as high as 1600degC while offering high thermal conductivity, low thermal

United Silicon Carbide Inc, is a manufacturer of semiconductors. The Company produces silicon carbide (SiC) power semiconductors such as FETs, JFETs and Schottky diodes for customers located throughout New Jersey. United Silicon Carbide also serves customers worldwide through their global operations. Silicon carbide market growth will likely be propelled by rising demand for high-performance power

Silicon carbide diodes have become increasingly popular across a range of circuit designs due to their higher performance levels and smaller form factor than silicon devices. WeEn’s SiC Schottky Barrier Diodes come in various packages ranging from leaded and bolt-on styles to surface mount SMD devices and are subject to extensive endurance testing to ensure

Kuumailmapinnan sytytin (HSI) korvaa tehokkaasti kaasu-uunin sytytystulpan, koska se antaa pienjännitesähkön kulkea sen läpi ja lämmittää sitä. Kun sytytin on lämmennyt käyttölämpötilaansa, se tuottaa tasasuuntautuneen tasasähkösignaalin, jolla varmistetaan liekin olemassaolo ja pidetään kaasuventtiilin pääasento auki.

Piikarbidi upokkaat ovat ihanteellisia metallin sulatus- ja valusovelluksiin, kuten sulatuskullan, hopean ja platinan sulatukseen. Niiden kestävyys kestää korkeita lämpötiloja, joten ne soveltuvat kullan sulatukseen. Ne soveltuvat keskihiiliselle teräkselle, harvinaisille metalliseoksille ja muille ei-rautametalleille sekä kestävät kulutusta, korroosiota ja lämpöä.