Karbid k\u0159em\u00edku je slou\u010denina, kter\u00e1 se \u010dasto pou\u017e\u00edv\u00e1 v za\u0159\u00edzen\u00edch v\u00fdkonov\u00e9 elektroniky. M\u00e1 r\u016fzn\u00e9 vlastnosti, kter\u00e9 mohou zlep\u0161it v\u00fdkon oproti za\u0159\u00edzen\u00edm na b\u00e1zi k\u0159em\u00edku, v\u010detn\u011b zv\u00fd\u0161en\u00e9 kapacity blokovac\u00edho nap\u011bt\u00ed a sn\u00ed\u017een\u00e9ho m\u011brn\u00e9ho odporu p\u0159i zapnut\u00ed.<\/p>\n
V\u00fdzkum spole\u010dnosti Littelfuse v oblasti t\u011bchto vlastnost\u00ed vy\u00fastil v novou technologii ur\u010denou ke zv\u00fd\u0161en\u00ed \u00fa\u010dinnosti syst\u00e9m\u016f zalo\u017een\u00fdch na AGPU. Spole\u010dnost Littelfuse \u00fasp\u011b\u0161n\u011b provedla rozs\u00e1hl\u00e9 zkou\u0161ky s vyu\u017eit\u00edm experiment\u00e1ln\u00edch syst\u00e9m\u016f vyvinut\u00fdch v r\u00e1mci tohoto v\u00fdzkumn\u00e9ho projektu, kter\u00e9 prok\u00e1zaly jej\u00ed \u00fa\u010dinnost.<\/p>\n
Karbid k\u0159em\u00edku, slitina k\u0159em\u00edku a uhl\u00edku, se ji\u017e dlouho pou\u017e\u00edv\u00e1 jako brusn\u00fd materi\u00e1l v brusn\u00fdch kotou\u010d\u00edch, a to od doby, kdy se poprv\u00e9 objevil v brusn\u00fdch kotou\u010d\u00edch ve 20. letech 20. stolet\u00ed, pozd\u011bji p\u0159e\u0161el k v\u00fdrob\u011b nepr\u016fst\u0159eln\u00fdch vest a v posledn\u00ed dob\u011b se pou\u017e\u00edv\u00e1 jako substr\u00e1t pro v\u00fdrobu v\u00fdkonov\u00fdch polovodi\u010d\u016f. Ned\u00e1vno v\u0161ak bylo zji\u0161t\u011bno, \u017ee m\u00e1 n\u011bkolik jedine\u010dn\u00fdch vlastnost\u00ed, d\u00edky nim\u017e je obzvl\u00e1\u0161t\u011b vhodn\u00fd pro v\u00fdrobu elektronick\u00fdch sou\u010d\u00e1stek, jako je v\u00fdroba v\u00fdkonov\u00fdch polovodi\u010d\u016f.<\/p>\n
SiC, neboli karbid k\u0159em\u00edku, by mohl zp\u016fsobit revoluci ve v\u00fdkonov\u00e9 elektronice jako alternativa k za\u0159\u00edzen\u00edm na b\u00e1zi k\u0159em\u00edku d\u00edky sv\u00fdm jedine\u010dn\u00fdm elektrick\u00fdm vlastnostem, kter\u00e9 mu umo\u017e\u0148uj\u00ed poskytovat v\u00fdznamn\u00e9 v\u00fdhody oproti k\u0159em\u00edkov\u00fdm IGBT a MOSFET.<\/p>\n
Proto\u017ee nitridov\u00e9 polovodi\u010de maj\u00ed vysokou intenzitu pr\u016frazn\u00e9ho elektrick\u00e9ho pole, umo\u017e\u0148uj\u00ed vytv\u00e1\u0159et mnohem men\u0161\u00ed hradlov\u00e9 a driftov\u00e9 vrstvy, ne\u017e je mo\u017en\u00e9 u k\u0159em\u00edku, co\u017e se projevuje ve vy\u0161\u0161\u00edch provozn\u00edch nap\u011bt\u00edch a krat\u0161\u00edch sp\u00ednac\u00edch \u010dasech; nav\u00edc provozn\u00ed teploty mohou b\u00fdt mnohem vy\u0161\u0161\u00ed ne\u017e u b\u011b\u017en\u00fdch polovodi\u010d\u016f na b\u00e1zi k\u0159em\u00edku.<\/p>\n
V\u0161echny tyto faktory dohromady vytv\u00e1\u0159ej\u00ed polovodi\u010d s vynikaj\u00edc\u00edm v\u00fdkonem v mnoha aplikac\u00edch, co\u017e vedlo k jeho \u0161irok\u00e9mu vyu\u017eit\u00ed v konstrukc\u00edch v\u00fdkonov\u00e9 elektroniky, jako jsou nab\u00edje\u010dky pro elektromobily, sol\u00e1rn\u00ed st\u0159\u00edda\u010de a trak\u010dn\u00ed m\u011bni\u010de.<\/p>\n
Karbid k\u0159em\u00edku zvl\u00e1d\u00e1 vysok\u00e9 \u00farovn\u011b p\u0159echodov\u00fdch jev\u016f, ani\u017e by byl ohro\u017een, co\u017e z n\u011bj \u010din\u00ed vynikaj\u00edc\u00ed materi\u00e1l pro tvrd\u00e9 a m\u011bkk\u00e9 sp\u00ednac\u00ed topologie, jako jsou topologie LLC a ZVS.<\/p>\n
Nap\u00e1jec\u00ed moduly Wolfspeed WolfPACK jsou pro tyto typy aplikac\u00ed ide\u00e1ln\u00ed volbou a maj\u00ed mnoho funkc\u00ed, d\u00edky nim\u017e jsou vhodn\u00e9 pro v\u00fdkonn\u00e9 nab\u00edje\u010dky elektromobil\u016f, sol\u00e1rn\u00ed st\u0159\u00edda\u010de, trak\u010dn\u00ed st\u0159\u00edda\u010de a distribuci energie v datov\u00fdch centrech. Chcete-li z\u00edskat v\u00edce informac\u00ed o t\u00e9to technologii a o tom, jak m\u016f\u017ee pomoci dos\u00e1hnout \u00fa\u010dinnosti a v\u00fdkonu pro v\u00e1\u0161 p\u0159\u00ed\u0161t\u00ed n\u00e1vrh, st\u00e1hn\u011bte si na\u0161i b\u00edlou knihu:<\/p>\n
Karbid k\u0159em\u00edku, b\u011b\u017en\u011b ozna\u010dovan\u00fd jako SiC, se d\u00edky sv\u00fdm jedine\u010dn\u00fdm vlastnostem st\u00e1v\u00e1 st\u00e1le obl\u00edben\u011bj\u0161\u00edm materi\u00e1lem pou\u017e\u00edvan\u00fdm ve v\u00fdkonov\u00e9 elektronice. SiC se m\u016f\u017ee pochlubit v\u00fdjime\u010dnou pevnost\u00ed elektrick\u00e9ho pole, kter\u00e1 umo\u017e\u0148uje v\u00fdrazn\u00e9 zv\u00fd\u0161en\u00ed v\u00fdkonu v tranzistorech MOSFET - a umo\u017e\u0148uje konstrukt\u00e9r\u016fm vyv\u00edjet za\u0159\u00edzen\u00ed schopn\u00e1 zvl\u00e1dnout p\u0159echodn\u00e9 v\u00fdkonov\u00e9 jevy, kter\u00e9 by za norm\u00e1ln\u00edch okolnost\u00ed zp\u016fsobily selh\u00e1n\u00ed tradi\u010dn\u00edch IGBT nebo standardn\u00edch v\u00fdkonov\u00fdch tranzistor\u016f MOSFET.<\/p>\n
Karbid k\u0159em\u00edku m\u016f\u017ee pracovat p\u0159i vy\u0161\u0161\u00edch teplot\u00e1ch ne\u017e k\u0159em\u00edk, \u010d\u00edm\u017e sni\u017euje produkci tepla v energetick\u00fdch obvodech a zvy\u0161uje \u00fa\u010dinnost a sni\u017euje tepeln\u00e9 ztr\u00e1ty, \u010d\u00edm\u017e \u0161et\u0159\u00ed v\u00edce energie a n\u00e1klady na pl\u00fdtv\u00e1n\u00ed energi\u00ed. Krom\u011b toho SiC poskytuje lep\u0161\u00ed ochranu p\u0159ed obloukov\u00fdmi v\u00fdboji a p\u0159ep\u011bt\u00edm, co\u017e je v\u00fdhodn\u00e9 v automobilov\u00e9m pr\u016fmyslu i v pr\u016fmyslov\u00e9m prost\u0159ed\u00ed.<\/p>\n
Dal\u0161\u00ed v\u00fdhodou SiC jsou n\u00edzk\u00e9 sp\u00ednac\u00ed ztr\u00e1ty, zejm\u00e9na ve srovn\u00e1n\u00ed s k\u0159em\u00edkov\u00fdmi tranzistory; tranzistory SiC MOSFET se mohou pochlubit ni\u017e\u0161\u00edmi ztr\u00e1tami p\u0159i veden\u00ed energie a mohou se rychleji zap\u00ednat a vyp\u00ednat, \u010d\u00edm\u017e se zlep\u0161uje celkov\u00fd v\u00fdkon syst\u00e9mu - co\u017e je u\u017eite\u010dn\u00e9 zejm\u00e9na v aplikac\u00edch, kde se mus\u00ed v\u00fdkonov\u00e9 sp\u00edna\u010de \u010dasto zap\u00ednat a vyp\u00ednat.<\/p>\n
Nap\u00e1jec\u00ed moduly z karbidu k\u0159em\u00edku jsou schopny zvl\u00e1dat velk\u00e9 proudov\u00e9 toky, tak\u017ee jsou ide\u00e1ln\u00ed pro n\u00e1ro\u010dn\u00e9 aplikace. Jsou schopny zvl\u00e1dnout a\u017e 40 A nep\u0159etr\u017eit\u011b nebo kr\u00e1tk\u00e9 n\u00e1razy 100 A - co\u017e je v\u00fdrazn\u011b v\u00edce ne\u017e tradi\u010dn\u00ed k\u0159em\u00edkov\u00e9 IGBT, kter\u00e9 podporuj\u00ed pouze 10 A nep\u0159etr\u017eit\u00fd provoz.<\/p>\n
Pro vyhodnocen\u00ed v\u00fdkonu SiC-IGBT bylo zkonstruov\u00e1no n\u011bkolik experiment\u00e1ln\u00edch syst\u00e9m\u016f. Jednalo se o syst\u00e9m AGPU, jednopulzn\u00ed test (SPT) a syst\u00e9my t\u0159\u00edf\u00e1zov\u00fdch m\u011bni\u010d\u016f. V\u0161echny t\u0159i uk\u00e1zaly, \u017ee SiC-IGBT p\u0159ekon\u00e1vaj\u00ed sv\u00e9 prot\u011bj\u0161ky Si-IGBT jak z hlediska tvrd\u00fdch a m\u011bkk\u00fdch sp\u00ednac\u00edch charakteristik, tak z hlediska \u00fa\u010dinnosti.<\/p>\n
P\u0159i pou\u017eit\u00ed SiC-IGBT je v\u0161ak nutn\u00e9 vz\u00edt v \u00favahu jeho po\u017eadavky na pohon ovlada\u010de hradla. Zejm\u00e9na jeho induk\u010dnost mus\u00ed b\u00fdt co nejmen\u0161\u00ed, aby se zabr\u00e1nilo zvon\u011bn\u00ed a elektromagnetick\u00e9mu ru\u0161en\u00ed (EMI), a m\u011bl by tak\u00e9 vydr\u017eet po\u017eadovan\u00e9 nap\u011bt\u00ed hradla p\u0159i zap\u00edn\u00e1n\u00ed\/vyp\u00edn\u00e1n\u00ed.<\/p>\n
Karbid k\u0159em\u00edku je nov\u00fd materi\u00e1l, kter\u00fd m\u00e1 oproti sv\u00fdm k\u0159em\u00edkov\u00fdm prot\u011bj\u0161k\u016fm \u0159adu v\u00fdhod. Karbid k\u0159em\u00edku mimo jin\u00e9 vynik\u00e1 lep\u0161\u00edm odvodem tepla a vy\u0161\u0161\u00ed kritickou pr\u016fraznost\u00ed (a\u017e 10x vy\u0161\u0161\u00ed) a spolehlivost\u00ed v prost\u0159ed\u00ed s vysok\u00fdmi teplotami. Krom\u011b toho jsou sp\u00ednac\u00ed a vodiv\u00e9 ztr\u00e1ty ni\u017e\u0161\u00ed, co\u017e vede k vy\u0161\u0161\u00ed \u00fa\u010dinnosti - d\u00edky t\u011bmto vlastnostem je karbid k\u0159em\u00edku ide\u00e1ln\u00ed pro aplikace p\u0159em\u011bny energie.<\/p>\n
Karbid k\u0159em\u00edku (SiC) je slou\u010denina slo\u017een\u00e1 z k\u0159em\u00edku a uhl\u00edku s v\u00fdjime\u010dn\u00fdmi elektrick\u00fdmi vlastnostmi, d\u00edky nim\u017e je vhodn\u00e1 pro v\u00fdkonov\u00e9 polovodi\u010dov\u00e9 aplikace. D\u00edky sv\u00e9 bezpe\u010dnosti, \u0161etrnosti k \u017eivotn\u00edmu prost\u0159ed\u00ed a vynikaj\u00edc\u00edmu v\u00fdkonu je SiC vhodn\u00fd zejm\u00e9na pro m\u011bni\u010de, palubn\u00ed nab\u00edje\u010dky, DC\/DC m\u011bni\u010de a DC\/AC m\u011bni\u010de; nav\u00edc by tato nov\u00e1 technologie mohla potenci\u00e1ln\u011b zv\u00fd\u0161it dojezd elektromobil\u016f a\u017e o 6 %.<\/p>\n
V\u00fdkonov\u00e9 tranzistory SiC MOSFET se vyzna\u010duj\u00ed ni\u017e\u0161\u00edm sp\u00ednac\u00edm odporem a rychlej\u0161\u00edmi dobami zapnut\u00ed\/vypnut\u00ed ne\u017e jejich k\u0159em\u00edkov\u00e9 prot\u011bj\u0161ky IGBT, co\u017e jim umo\u017e\u0148uje poskytovat vysokou proudovou kapacitu v kompaktn\u00edm balen\u00ed se sn\u00ed\u017een\u00fdm po\u010dtem extern\u00edch sou\u010d\u00e1stek, co\u017e vede k \u00faspo\u0159e n\u00e1klad\u016f a vy\u0161\u0161\u00ed spolehlivosti.<\/p>\n
SiC je vynikaj\u00edc\u00ed volbou materi\u00e1lu d\u00edky sv\u00e9 schopnosti odol\u00e1vat n\u00e1hl\u00fdm p\u0159echodov\u00fdm nap\u011bt\u00edm, co\u017e zaji\u0161\u0165uje v\u011bt\u0161\u00ed bezpe\u010dnost p\u0159i poruch\u00e1ch. Tato vlastnost tak\u00e9 umo\u017e\u0148uje zpracov\u00e1n\u00ed zkratov\u00e9ho proudu, co\u017e zaji\u0161\u0165uje lep\u0161\u00ed bezpe\u010dnostn\u00ed opat\u0159en\u00ed proti zkratov\u00e9mu proudu.<\/p>\n
SiC-IGBT jsou ide\u00e1ln\u00ed volbou pro hybridn\u00ed v\u00fdkonov\u00e9 moduly, proto\u017ee jejich rozsah provozn\u00edch teplot p\u0159esahuje rozsah standardn\u00edch IGBT - tato vlastnost je d\u016fle\u017eit\u00e1 zejm\u00e9na v pr\u016fmyslov\u00e9m prost\u0159ed\u00ed, kde mohou b\u00fdt komponenty vystaveny drsn\u00fdm podm\u00ednk\u00e1m. Krom\u011b toho jejich v\u011bt\u0161\u00ed rozkmit nap\u011bt\u00ed mezi hradlem a emitorem umo\u017e\u0148uje pracovat p\u0159i vy\u0161\u0161\u00edch proudov\u00fdch \u00farovn\u00edch bez probl\u00e9m\u016f s p\u0159ekmitem nebo podsko\u010den\u00edm.<\/p>\n
V\u00fdkonov\u00e9 polovodi\u010de z karbidu k\u0159em\u00edku jsou st\u00e1le obl\u00edben\u011bj\u0161\u00ed volbou pro r\u016fzn\u00e9 aplikace. Jejich energetick\u00e1 \u00fa\u010dinnost v\u00fdrazn\u011b p\u0159evy\u0161uje tradi\u010dn\u00ed k\u0159em\u00edkov\u00e9 prot\u011bj\u0161ky a vydr\u017e\u00ed vy\u0161\u0161\u00ed teploty, ani\u017e by do\u0161lo k jejich po\u0161kozen\u00ed. Jejich ni\u017e\u0161\u00ed sp\u00ednac\u00ed ztr\u00e1ty nav\u00edc umo\u017e\u0148uj\u00ed vy\u0161\u0161\u00ed frekvence ne\u017e b\u011b\u017en\u00e9 k\u0159em\u00edkov\u00e9 tranzistory - ide\u00e1ln\u00ed pro tvrd\u00e9 a rezonan\u010dn\u00ed sp\u00ednac\u00ed topologie. D\u00edky mnohem vy\u0161\u0161\u00ed kritick\u00e9 pr\u016fraznosti ve srovn\u00e1n\u00ed se standardn\u00edmi tranzistory MOSFET jsou nav\u00edc je\u0161t\u011b odoln\u011bj\u0161\u00ed v\u016f\u010di vysok\u00e9mu nap\u011b\u0165ov\u00e9mu zat\u00ed\u017een\u00ed.<\/p>\n
V\u011bdci ned\u00e1vno vyu\u017eili SPT k m\u011b\u0159en\u00ed sp\u00ednac\u00edch charakteristik Si-IGBT a SiC-IGBT p\u0159i odporov\u00e9m a RL zat\u00ed\u017een\u00ed. Jejich m\u011b\u0159en\u00ed odhalila, \u017ee za\u0159\u00edzen\u00ed SiC-IGBT maj\u00ed ni\u017e\u0161\u00ed sp\u00ednac\u00ed ztr\u00e1ty d\u00edky ni\u017e\u0161\u00edmu odporu kolektor-emitor a rychlej\u0161\u00edm sp\u00ednac\u00edm \u010das\u016fm, co\u017e vede k vy\u0161\u0161\u00ed \u00fa\u010dinnosti konverze.<\/p>\n
IGBT jsou sice obecn\u011b pova\u017eov\u00e1ny za ide\u00e1ln\u00ed \u0159e\u0161en\u00ed pro pr\u016fmyslov\u00e9 m\u011bni\u010de se zdrojem nap\u011bt\u00ed, ale nemus\u00ed b\u00fdt v\u017edy optim\u00e1ln\u00edm \u0159e\u0161en\u00edm pro ka\u017edou aplikaci. Jejich vy\u0161\u0161\u00ed sp\u00ednac\u00ed ztr\u00e1ty a jin\u00e9 typy v\u00fdkonov\u00fdch polovodi\u010d\u016f mohou zp\u016fsobit v\u00fdrazn\u00e9 zv\u00fd\u0161en\u00ed teploty v syst\u00e9mech a zv\u00fd\u0161it odvod tepla a sn\u00ed\u017eit \u00fa\u010dinnost; na\u0161t\u011bst\u00ed nov\u00e9 pokroky v oblasti polovodi\u010d\u016f umo\u017e\u0148uj\u00ed konstrukt\u00e9r\u016fm tyto sp\u00ednac\u00ed ztr\u00e1ty sn\u00ed\u017eit.<\/p>\n
V\u00fdkonov\u00e9 tranzistory MOSFET z karbidu k\u0159em\u00edku maj\u00ed ve srovn\u00e1n\u00ed s tranzistory IGBT mnohem vy\u0161\u0161\u00ed kritickou pr\u016fraznost a spolehliv\u011b pracuj\u00ed p\u0159i mnohem vy\u0161\u0161\u00edch teplot\u00e1ch, co\u017e jim umo\u017e\u0148uje odol\u00e1vat p\u0159echodn\u00fdm jev\u016fm v nap\u00e1jec\u00edch syst\u00e9mech, a t\u00edm celkov\u011b zvy\u0161ovat spolehlivost.<\/p>\n
Spole\u010dnost Infineon nab\u00edz\u00ed technologie IGBT a karbidu k\u0159em\u00edku pro aplikace zahrnuj\u00edc\u00ed trak\u010dn\u00ed m\u011bni\u010de a sol\u00e1rn\u00ed m\u011bni\u010de, ovlada\u010de hradel pro IGBT a v\u00fdkonov\u00e9 MOSFETy z karbidu k\u0159em\u00edku, kter\u00e9 poskytuj\u00ed maxim\u00e1ln\u00ed v\u00fdkon a \u00fa\u010dinnost v topologi\u00edch s tvrd\u00fdm sp\u00edn\u00e1n\u00edm, jako\u017e i vy\u0161\u0161\u00ed sp\u00ednac\u00ed frekvence, co\u017e vede k men\u0161\u00edm rozm\u011br\u016fm syst\u00e9m\u016f se sn\u00ed\u017eenou hmotnost\u00ed a v\u011bt\u0161\u00ed hustotou v\u00fdkonu.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide is a compound often utilized in power electronics devices. It possesses various attributes that can improve performance over silicon-based devices, including increased blocking voltage capacities and reduced specific on-resistance. Littelfuse’s research on these attributes has resulted in new technology designed to increase efficiency within AGPU-based systems. Littelfuse has successfully conducted extensive trials using […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-537","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/posts\/537","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/comments?post=537"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/posts\/537\/revisions"}],"predecessor-version":[{"id":538,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/posts\/537\/revisions\/538"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/media?parent=537"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/categories?post=537"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/tags?post=537"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}