Karbid k\u0159em\u00edku je extr\u00e9mn\u011b tvrd\u00fd, ale st\u00e1le m\u00e9n\u011b tvrd\u00fd ne\u017e diamant. St\u00e1le v\u0161ak pat\u0159\u00ed na druh\u00e9 m\u00edsto mezi extr\u00e9mn\u011b tvrd\u00fdmi materi\u00e1ly.<\/p>\n
P\u00f3rovit\u00e9 diamantov\u00e9 p\u0159edlisky s uhl\u00edkovou vazbou proch\u00e1zej\u00ed infiltrac\u00ed, p\u0159i n\u00ed\u017e se k\u0159em\u00edk infiltruje kapil\u00e1rn\u00ed silou p\u0159i teplot\u00e1ch p\u0159esahuj\u00edc\u00edch bod t\u00e1n\u00ed, na\u010de\u017e se uhl\u00edkov\u00e9 pojivo p\u0159em\u011bn\u00ed na grafit.<\/p>\n
Diamant z karbidu k\u0159em\u00edku je extr\u00e9mn\u011b vysokoteplotn\u00ed materi\u00e1l s vynikaj\u00edc\u00ed tepelnou vodivost\u00ed, kter\u00fd se \u0161iroce pou\u017e\u00edv\u00e1 v elektrotechnice, elektronice a pr\u016fmyslu. Mezi jeho aplikace pat\u0159\u00ed chlazen\u00ed a oh\u0159ev polovodi\u010d\u016f, tranzistor\u016f a v\u00fdkonov\u00fdch LED diod, stejn\u011b jako aplikace pro osv\u011btlen\u00ed LED displej\u016f. Tepeln\u00e1 vodivost kompozit\u016f SiC\/diamant z\u00e1vis\u00ed na n\u011bkolika faktorech, v\u010detn\u011b mno\u017estv\u00ed a velikosti diamantu, slo\u017een\u00ed jejich pojivov\u00e9ho materi\u00e1lu a struktury jejich rozhran\u00ed mezi slo\u017ekami, jako\u017e i vlivu grafitov\u00e9 mezivrstvy na tepelnou vodivost tohoto materi\u00e1lu.<\/p>\n
Vytv\u00e1\u0159en\u00ed vysoce odoln\u00fdch materi\u00e1l\u016f proti opot\u0159eben\u00ed s vynikaj\u00edc\u00ed tepelnou vodivost\u00ed je od minul\u00e9ho desetilet\u00ed trval\u00fdm c\u00edlem v\u00fdzkumu a v\u00fdvoje. Materi\u00e1ly \"diamantov\u00e9ho karbidu k\u0159em\u00edku\" lze vyr\u00e1b\u011bt infiltrac\u00ed kapaln\u00e9ho k\u0159em\u00edku kapil\u00e1rn\u00edmi silami p\u0159i teplot\u00e1ch vy\u0161\u0161\u00edch ne\u017e 1425 stup\u0148\u016f C za vzniku kubick\u00fdch struktur b-SiC, kter\u00e9 by mohly nahradit tradi\u010dn\u00ed ocelov\u00e9 materi\u00e1ly jako lo\u017eiska, t\u011bsn\u011bn\u00ed nebo vlo\u017eky v pr\u016fmyslov\u00fdch aplikac\u00edch.<\/p>\n
Pro optim\u00e1ln\u00ed tepelnou vodivost kompozit\u016f SiC\/diamant lze pro zv\u00fd\u0161en\u00ed tepeln\u00e9 vodivosti pou\u017e\u00edt bimod\u00e1ln\u00ed rozlo\u017een\u00ed diamantov\u00fdch zrn r\u016fzn\u00fdch velikost\u00ed a frakc\u00ed. Bimod\u00e1ln\u00ed syst\u00e9my nab\u00edzej\u00ed v\u00fdrazn\u011b vy\u0161\u0161\u00ed tepelnou vodivost ve srovn\u00e1n\u00ed s monomod\u00e1ln\u00edmi syst\u00e9my d\u00edky tomu, \u017ee mezi diamantov\u00fdmi zrny a jejich hostitelskou matric\u00ed z matri\u010dn\u00edho materi\u00e1lu b-SiC jsou grafitick\u00e9 atom\u00e1rn\u00ed vrstvy.<\/p>\n
Nav\u00edc jsou vrstvy grafitov\u00fdch atom\u016f uspo\u0159\u00e1d\u00e1ny kolmo k rozhran\u00ed, \u010d\u00edm\u017e vznikaj\u00ed bimod\u00e1ln\u00ed syst\u00e9my s relativn\u011b velk\u00fdm povrchem, kter\u00fd zvy\u0161uje tepelnou vodivost. Tepeln\u00e1 vodivost se je\u0161t\u011b zv\u00fd\u0161\u00ed, pokud je diamant slinut p\u0159i vy\u0161\u0161\u00edch teplot\u00e1ch nebo je b\u011bhem infiltrace k\u0159em\u00edku udr\u017eov\u00e1n krat\u0161\u00ed dobu - a t\u00edm se zv\u00fd\u0161\u00ed nad \u00farove\u0148 \u010dist\u00e9ho b-SiC! Tepeln\u00e1 vodivost materi\u00e1l\u016f nav\u00edc z\u00e1vis\u00ed tak\u00e9 na mno\u017estv\u00ed voln\u00e9ho k\u0159em\u00edku a diamantu.<\/p>\n
Karbid k\u0159em\u00edku, kter\u00fd se skl\u00e1d\u00e1 z atom\u016f k\u0159em\u00edku a uhl\u00edku, m\u00e1 vynikaj\u00edc\u00ed tvrdost 9,5 podle Mohsovy stupnice a \u0159ad\u00ed se tak na druh\u00e9 m\u00edsto po diamantu, pokud jde o tvrdost. D\u00edky sv\u00e9 pevnosti a odolnosti nach\u00e1z\u00ed karbid k\u0159em\u00edku \u010detn\u00e1 pr\u016fmyslov\u00e1 vyu\u017eit\u00ed.<\/p>\n
Karbid k\u0159em\u00edku m\u00e1 mnoho spole\u010dn\u00fdch vlastnost\u00ed s diamantem, v\u010detn\u011b krystalov\u00e9 struktury, kter\u00e1 je tetraedrick\u00e1 - \u010dty\u0159i atomy ka\u017ed\u00e9ho prvku sd\u00edlej\u00ed jednu kubickou m\u0159\u00ed\u017eku s centrovan\u00fdm povrchem a vytv\u00e1\u0159ej\u00ed siln\u00e9 kovalentn\u00ed vazby podobn\u00e9 siln\u00fdm tetraedrick\u00fdm vazb\u00e1m diamantu - a tak\u00e9 vysokou pevnost v tahu a n\u00edzk\u00fd koeficient t\u0159en\u00ed, co\u017e z obou materi\u00e1l\u016f \u010din\u00ed skv\u011bl\u00e9 materi\u00e1ly pro obrobky.<\/p>\n
Karbid k\u0159em\u00edku lze vyr\u00e1b\u011bt n\u011bkolika technikami, p\u0159i\u010dem\u017e syntetick\u00fd karbid k\u0159em\u00edku se vyr\u00e1b\u00ed taven\u00edm k\u0159emenn\u00e9ho p\u00edsku, ropn\u00e9ho koksu (nebo uheln\u00e9ho koksu), d\u0159evn\u00ed \u0161t\u011bpky nebo jin\u00fdch surovin ve vysokoteplotn\u00edch pec\u00edch. Jakmile je karbid k\u0159em\u00edku vytvo\u0159en, vykazuje tvrdost, m\u00e1 zv\u00fd\u0161enou teplotu t\u00e1n\u00ed a odol\u00e1v\u00e1 oxidaci i za extr\u00e9mn\u00edch teplotn\u00edch podm\u00ednek.<\/p>\n
Karbid k\u0159em\u00edku m\u00e1 mnoho praktick\u00fdch vyu\u017eit\u00ed v pr\u016fmyslu. Jedn\u00edm z nich je pou\u017eit\u00ed v brusivech. D\u00edky sv\u00e9 v\u00fdjime\u010dn\u00e9 odolnosti a pevnosti je karbid k\u0159em\u00edku nepostradatelnou sou\u010d\u00e1st\u00ed brusn\u00fdch pap\u00edr\u016f, brusn\u00fdch kotou\u010d\u016f a \u0159ezn\u00fdch n\u00e1stroj\u016f. Karbid k\u0159em\u00edku nach\u00e1z\u00ed uplatn\u011bn\u00ed tak\u00e9 jako izola\u010dn\u00ed sou\u010d\u00e1st pr\u016fmyslov\u00fdch pec\u00ed, stejn\u011b jako jako sou\u010d\u00e1stky odoln\u00e9 proti opot\u0159eben\u00ed u \u010derpadel a raketov\u00fdch motor\u016f a polovodi\u010dov\u00e9 substr\u00e1ty pou\u017e\u00edvan\u00e9 pro sv\u011bteln\u00e9 diody (LED).<\/p>\n
Existuj\u00ed r\u016fzn\u00e9 metody v\u00fdroby karbidu k\u0159em\u00edku. Tradi\u010dn\u00ed techniky zahrnuj\u00ed sp\u00e9k\u00e1n\u00ed, p\u0159i n\u011bm\u017e se pr\u00e1\u0161kov\u00fd k\u0159em\u00edk a uhl\u00edk spoj\u00ed ve vysokotlak\u00e9 tavenin\u011b a vytvo\u0159\u00ed se sp\u00e9kan\u00fd blok karbidu k\u0159em\u00edku, kter\u00fd lze pot\u00e9 \u0159ezat do po\u017eadovan\u00fdch tvar\u016f a velikost\u00ed. Jin\u00e1 alternativa zahrnuje reakci tekut\u00e9ho k\u0159em\u00edku s por\u00e9zn\u00edm grafitem; t\u00edm vznik\u00e1 \u010dern\u00fd syntetick\u00fd moissanit, kter\u00fd m\u00e1 n\u011bkter\u00e9 stejn\u00e9 mechanick\u00e9 vlastnosti, ani\u017e by byl tak n\u00e1kladn\u00fd.<\/p>\n
Bylo zji\u0161t\u011bno, \u017ee speci\u00e1ln\u011b vyr\u00e1b\u011bn\u00e9 diamantov\u00e9 materi\u00e1ly v\u00e1zan\u00e9 karbidem k\u0159em\u00edku s grafitov\u00fdmi mezivrstvami na rozhran\u00ed se vyzna\u010duj\u00ed v\u00fdjime\u010dn\u011b vysokou pevnost\u00ed, kter\u00e1 p\u0159evy\u0161uje dokonce i pevnost rozhran\u00ed diamant\/SiC bez grafitu, i kdy\u017e nen\u00ed jasn\u00e9, zda je to zp\u016fsobeno mezivrstvami grafitu.<\/p>\n
Diamanty z karbidu k\u0159em\u00edku jsou extr\u00e9mn\u011b odoln\u00e9 materi\u00e1ly s vynikaj\u00edc\u00ed chemickou stabilitou, tak\u017ee jsou vhodn\u00e9 pro aplikace opot\u0159eben\u00ed, jako jsou t\u011bsn\u011bn\u00ed, vlo\u017eky a trysky. Krom\u011b toho jsou tyto diamanty skv\u011bl\u00fdmi \u0159ezn\u00fdmi n\u00e1stroji. D\u00edky jejich siln\u00e9 krystalov\u00e9 struktu\u0159e a dobr\u00fdm tvrdostn\u00edm vlastnostem je obr\u00e1b\u011bn\u00ed diamant\u016f karbidu k\u0159em\u00edku ve srovn\u00e1n\u00ed s mnoha jin\u00fdmi tvrd\u00fdmi materi\u00e1ly pom\u011brn\u011b snadn\u00e9 a maj\u00ed tak\u00e9 n\u00edzk\u00fd koeficient t\u0159en\u00ed, co\u017e je \u010din\u00ed vhodn\u00fdmi pro pr\u016fmyslov\u00e9 pou\u017eit\u00ed.<\/p>\n
Diamanty z karbidu k\u0159em\u00edku zaznamenaly rychl\u00fd v\u00fdvoj kv\u016fli zv\u00fd\u0161en\u00fdm po\u017eadavk\u016fm na odolnost proti opot\u0159eben\u00ed. Karbid k\u0159em\u00edku, anorganick\u00e1 slou\u010denina skl\u00e1daj\u00edc\u00ed se z uhl\u00edku a k\u0159em\u00edku s hexagon\u00e1ln\u00ed krystalovou strukturou, m\u016f\u017ee b\u00fdt vyr\u00e1b\u011bn v r\u016fzn\u00fdch tvarech a velikostech. Edward Goodrich Acheson vytvo\u0159il prvn\u00ed slou\u010deninu karbidu k\u0159em\u00edku v roce 1891 zah\u0159\u00edv\u00e1n\u00edm j\u00edlu a pr\u00e1\u0161kov\u00e9ho koksu v \u017eelezn\u00e9 misce, dokud se nevytvo\u0159ily modr\u00e9 krystaly, kter\u00e9 byly zn\u00e1my jako karborundum - Acheson v\u011b\u0159il, \u017ee tento materi\u00e1l bude m\u00edt vy\u0161\u0161\u00ed hodnotu ne\u017e uhl\u00ed, proto\u017ee se z n\u011bj daj\u00ed vyr\u00e1b\u011bt kovy.<\/p>\n
Karbid k\u0159em\u00edku se od \u010dist\u00e9ho diamantu v\u00fdrazn\u011b li\u0161\u00ed t\u00edm, \u017ee m\u00e1 v\u011bt\u0161\u00ed stabilitu p\u0159i vysok\u00fdch teplot\u00e1ch a n\u00edzk\u00fd koeficient t\u0159en\u00ed, p\u0159i\u010dem\u017e je v\u00fdrazn\u011b levn\u011bj\u0161\u00ed. Proto se karbid k\u0159em\u00edku stal obl\u00edben\u00fdm materi\u00e1lem pro pr\u016fmyslov\u00e9 pou\u017eit\u00ed.<\/p>\n
P\u0159i pou\u017eit\u00ed jako podkladov\u00fd pr\u00e1\u0161ek pro p\u0159edlisky z diamantu a SiC zabra\u0148uje pr\u00e1\u0161ek a-Si3N4 tvorb\u011b karbidu k\u0159em\u00edku a tvorb\u011b korpor\u00e1tn\u00edch vrstev, \u010d\u00edm\u017e v\u00fdrazn\u011b zvy\u0161uje pevnost rozhran\u00ed diamant-siC oproti b\u011b\u017en\u00fdm vzork\u016fm zalit\u00fdm v roztaven\u00e9m k\u0159em\u00edku.<\/p>\n
P\u0159esn\u00e1 povaha t\u011bchto rozhran\u00ed v\u0161ak z\u016fst\u00e1v\u00e1 z velk\u00e9 \u010d\u00e1sti nevysv\u011btlena. Mohlo by j\u00edt o d\u016fsledek slab\u0161\u00edch vazeb mezi grafitov\u00fdmi rovinami nebo o r\u016fzn\u00e9 f\u00e1ze na rozhran\u00ed, kter\u00e9 vy\u017eaduj\u00ed dal\u0161\u00ed v\u00fdzkum, aby byly pln\u011b pochopeny.<\/p>\n
K posouzen\u00ed rozlo\u017een\u00ed atomov\u00e9 hustoty v amorfn\u00ed vrstv\u011b z materi\u00e1lu 3 C-SiC\/diamant byla pou\u017eita energiov\u011b disperzn\u00ed rentgenov\u00e1 spektrometrie (EDX). V profilech intenzity atom\u016f uhl\u00edku a k\u0159em\u00edku v bl\u00edzkosti jejich vazebn\u00e9ho rozhran\u00ed byl pozorov\u00e1n postupn\u00fd pokles, p\u0159i\u010dem\u017e u uhl\u00edku byl zaznamen\u00e1n m\u00e9n\u011b strm\u00fd sklon. K\u0159em\u00edk vykazoval m\u00edrn\u011b konk\u00e1vn\u00ed hustotn\u00ed profily, zat\u00edmco u uhl\u00edku byly pozvoln\u011bj\u0161\u00ed.<\/p>\n
Diamanty jsou p\u0159\u00edrodn\u00ed drahokamy, kter\u00e9 vznikaly miliony let, ale jejich v\u00fdrobu lze prov\u00e9st synteticky v laborato\u0159i za mnohem men\u0161\u00ed pen\u00edze. Karbid k\u0159em\u00edku, dal\u0161\u00ed syntetick\u00fd drahokam s podobn\u00fdmi vlastnostmi, ale mnohem ni\u017e\u0161\u00edmi n\u00e1klady, je mnohem odoln\u011bj\u0161\u00ed a cenov\u011b v\u00fdhodn\u011bj\u0161\u00ed. Jeho vysok\u00fd index lomu mu umo\u017e\u0148uje odr\u00e1\u017eet sv\u011btlo \u00fa\u010dinn\u011bji ne\u017e jin\u00e9 drahokamy a z\u00e1rove\u0148 je d\u00edky sv\u00e9 odolnosti vhodn\u00fd pro ka\u017edodenn\u00ed no\u0161en\u00ed. Jeho n\u00edzk\u00fd bod t\u00e1n\u00ed nav\u00edc znamen\u00e1, \u017ee odol\u00e1v\u00e1 vysok\u00fdm teplot\u00e1m i chemik\u00e1li\u00edm, ani\u017e by pod tlakem praskal.<\/p>\n
Mikrostruktura kompozit\u016f diamant-karbid k\u0159em\u00edku se obvykle skl\u00e1d\u00e1 z prol\u00ednaj\u00edc\u00edch se trojrozm\u011brn\u00fdch s\u00edt\u00ed slo\u017een\u00fdch z SiC a diamantu. Velikost a morfologie \u010d\u00e1stic ur\u010duje kone\u010dnou strukturu trojit\u00e9ho spoje karbid\u016f k\u0159em\u00edku; typicky se atom\u00e1rn\u00ed vrstvy grafitick\u00e9ho rozhran\u00ed orientuj\u00ed kolmo k povrchu diamantu\/SiC a vytv\u00e1\u0159ej\u00ed s n\u00edm t\u011bsn\u00e9 vazby - jejich tlou\u0161\u0165ka je obvykle mnohem men\u0161\u00ed ne\u017e d\u00e9lka vazby mezi atomy karbidu k\u0159em\u00edku a atom\u00e1rn\u00edmi vrstvami diamantu.<\/p>\n
Pro optim\u00e1ln\u00ed tepelnou vodivost diamantu z karbidu k\u0159em\u00edku je z\u00e1sadn\u00ed pochopit, jak spolu jeho atomy interaguj\u00ed. Ke zkoum\u00e1n\u00ed rozhran\u00ed mezi diamantem a karbidem k\u0159em\u00edku, jejich strukturn\u00edch parametr\u016f a vz\u00e1jemn\u00e9ho p\u016fsoben\u00ed lze pou\u017e\u00edt synchrotronov\u00fd rentgenov\u00fd svazek. V\u00fdsledky uk\u00e1zaly slab\u00e9 interakce mezi \u010d\u00e1sticemi; kontaktn\u00ed oblasti mezi \u010d\u00e1sticemi diamantu a SiC obsahuj\u00ed sklovit\u00e9 vrstvy uhl\u00edku, grafitick\u00e9 hrani\u010dn\u00ed vrstvy a mikrop\u00f3ry - co\u017e je zn\u00e1mkou \u0161patn\u00e9 tepeln\u00e9 vodivosti diamantu.<\/p>\n
SiC a diamant spolu \u00fazce spolupracuj\u00ed, ale jeho pevnost z\u00e1vis\u00ed tak\u00e9 na jeho mikrostruktu\u0159e. Tato mikrostruktura se skl\u00e1d\u00e1 z trojrozm\u011brn\u00e9 s\u00edt\u011b \u010d\u00e1stic diamantu a karbidu k\u0159em\u00edku s pouze minim\u00e1ln\u00edm pokryt\u00edm grafitov\u00fdmi mezivrstvami po cel\u00e9 plo\u0161e povrchu; tato mikrostruktura nav\u00edc ur\u010duje i mechanick\u00e9 vlastnosti, jako je odolnost proti lomu.<\/p>\n
Pevnost vzorku kantileveru se zvy\u0161uje s t\u00edm, jak se v\u00edce rozhran\u00ed diamant\/SiC nakl\u00e1n\u00ed k jeho zat\u00ed\u017een\u00e9mu konci, jak ukazuj\u00ed simulace molekul\u00e1rn\u00ed dynamiky paraleln\u00edch rozhran\u00ed. Jako obzvl\u00e1\u0161t\u011b pevn\u00fd se uk\u00e1zal vzorek s n\u00e1klonem 40 nanometr\u016f.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide is extremely hard, yet still less so than diamond. But it still ranks second as an extremely hard material. Porous carbon-bonded diamond preforms undergo infiltration by infusing silicon through capillary force at temperatures exceeding its melting point, whereupon the carbon binder transforms into graphite. Thermal Conductivity Silicon carbide diamond is an extremely high-temperature […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[64],"tags":[],"class_list":["post-409","post","type-post","status-publish","format-standard","hentry","category-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/posts\/409","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/comments?post=409"}],"version-history":[{"count":1,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/posts\/409\/revisions"}],"predecessor-version":[{"id":410,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/posts\/409\/revisions\/410"}],"wp:attachment":[{"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/media?parent=409"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/categories?post=409"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/ceramicatijolart.com\/cs\/wp-json\/wp\/v2\/tags?post=409"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}